Search Results - "Bedair, Salah M."

Impact of embedded voids on thin-films with high thermal expansion coefficients mismatch by Khafagy, Khaled H., Hatem, Tarek M., Bedair, Salah M.

“…Using technology to reduce defects at heterogeneous interfaces of thin-films is at a high-priority for modern semiconductors. The current work utilizes a…”
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Thermodynamics Models for V-pit Nucleation and Growth in III-Nitride on Silicon by Khafagy, Khaled H., Hatem, Tarek M., Bedair, Salah M.

“…Silicon and sapphire are common substrates for AlN, InGaN, and GaN thin films in several applications such as photovoltaic and light-embedded diodes. Threading…”
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Embedded void approach effects on intrinsic stresses in laterally grown GaN-on-Si substrate by Salah, Salma I., Hatem, Tarek M., Khalil, Essam E., Bedair, Salah M.

“…[Display omitted] •Crystal plasticity analysis for embedded voids approach (EVA).•Impact of EVA on intrinsic stresses and defects.•Parametric study of voids’…”
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Minority Carrier Transport and Their Lifetime in InGaAs/GaAsP Multiple Quantum Well Structures by Carlin, Conrad Zachary, Bradshaw, Geoffrey Keith, Samberg, Joshua Paul, Colter, Peter C., Bedair, Salah M.

“…Minority carrier transport across InGaAs/GaAsP multiple quantum wells is studied by measuring the response of p-i-n and n-i-p GaAs solar cell structures. It is…”
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Biomolecular gradients via semiconductor gradients: characterization of amino acid adsorption to InxGa1-xN surfaces by Bain, Lauren E, Jewett, Scott A, Mukund, Aadhithya Hosalli, Bedair, Salah M, Paskova, Tania M, Ivanisevic, Albena

“…The band gap of indium gallium nitride can be tuned by varying the compositional ratio of indium to gallium, spanning the entire visible region and extending…”
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Interface properties of Ga(As,P)/(In,Ga)As strained multiple quantum well structures by Samberg, Joshua P., Alipour, Hamideh M., Bradshaw, Geoffrey K., Zachary Carlin, C., Colter, Peter C., LeBeau, James M., El-Masry, N. A., Bedair, Salah M.

“…(In,Ga)As/Ga(As,P) multiple quantum wells (MQWs) with GaAs interface layers have been characterized with photoluminescence (PL) and high resolution scanning…”
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Carrier Transport and Improved Collection in Thin-Barrier InGaAs/GaAsP Strained Quantum Well Solar Cells by Bradshaw, G. K., Carlin, C. Z., Samberg, J. P., El-Masry, N. A., Colter, P. C., Bedair, S. M.

“…Multiple quantum wells (MQW) lattice matched to GaAs consisting of In 0.14 Ga 0.76 As wells balanced with GaAs 0.24 P 0.76 barriers have been used to extend…”
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GaInP/GaAs Tandem Solar Cells With InGaAs/GaAsP Multiple Quantum Wells by Bradshaw, Geoffrey K., Samberg, Joshua P., Carlin, C. Zachary, Colter, Peter C., Edmondson, Kenneth M., Hong, William, Fetzer, Chris, Karam, Nasser, Bedair, Salah M.

“…Lattice-matched multiple quantum wells (MQWs) consisting of In x Ga 1-x As wells with very thin GaAs 0.2 P 0.8 barriers have been incorporated into a…”
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Determination of carrier recombination lifetime in InGaAs quantum wells from external quantum efficiency measurements by Bradshaw, Geoffrey K., Carlin, C. Zachary, Samberg, Joshua P., Colter, Peter C., Bedair, Salah M.

“…GaAs cells containing multiple quantum wells (MQW) of strained InGaAs/GaAsP can enhance efficiency in multijunction solar cells. Determination of carrier…”
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Tandem InGaP/GaAs-quantum well solar cells and their potential improvement through phosphorus carry-over management in multiple quantum well structures by Samberg, Joshua P., Bradshaw, Geoffrey K., Carlin, C. Zachary, Colter, Peter C., Edmondson, Ken, Hong, William, Fetzer, Chris, Karam, Nasser, El-Masry, N. A., Bedair, Salah M.

“…InGaP/GaAs/Ge multijunction solar cell (MJSC) efficiency can be increased through improved current matching among the subcells with multiple quantum wells…”
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Tunable GaInP solar cell lattice matched to GaAs by Hashem Sayed, Islam E., Carlin, C. Zachary, Hagar, Brandon, Colter, Peter C., Bedair, Salah M.

“…A new strain-balanced multiple quantum well (MQW) approach to tune the Ga 0.51 In 0.49 P bandgap is demonstrated. This approach is based on Ga 1-x In x P/Ga…”
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Biomolecular Gradients via Semiconductor Gradients: Characterization of Amino Acid Adsorption to In x Ga 1– x N Surfaces by Bain, Lauren E, Jewett, Scott A, Mukund, Aadhithya Hosalli, Bedair, Salah M, Paskova, Tania M, Ivanisevic, Albena

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Absorption Enhancement in inGaAsP/InGaP Quantum Well Solar Cells by Sayed, Islam E. H., Jain, Nikhil, Steiner, Myles A., Geisz, John F., Bedair, Salah M.

“…InGaAsP/InGaP quantum well (QW) structure is a potential candidate for subcells in next-generation multijunction solar cells because of its tunable bandgap…”
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Two-dimensional analysis of short-channel delta-doped GaAs MESFETs by Tian, H., Kim, K.W., Littlejohn, M.A., Bedair, S.M., Witkowski, L.C.

“…Key design parameters for delta-doped GaAs MESFETs, such as delta doping profile, top layer background doping density, and scaling of lateral feature size, are…”
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Extending the absorption threshold of InGaP solar cells to 1.60 eV using quantum wells: Experimental and modeling results by Hashem Sayed, Islam E., Hagar, Brandon G., Carlin, C. Zachary, Colter, Peter C., Bedair, Salah M.

“…Strain balanced multiple quantum wells (SBMQWs) lattice matched to GaAs consisting of InGaAsP wells balanced with InGaP barriers have been used to extend the…”
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Growth of device quality GaN at 550 °C by atomic layer epitaxy by Karam, N. H., Parodos, T., Colter, P., McNulty, D., Rowland, W., Schetzina, J., El-Masry, N., Bedair, Salah M.

“…GaN single crystal films were grown by atomic layer epitaxy at 550 °C. The room temperature photoluminescence properties of these low-temperature-grown films…”
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Biomolecular Gradients via Semiconductor Gradients: Characterization of Amino Acid Adsorption to In x Ga1–x N Surfaces by Bain, Lauren E, Jewett, Scott A, Mukund, Aadhithya Hosalli, Bedair, Salah M, Paskova, Tania M, Ivanisevic, Albena

“…The band gap of indium gallium nitride can be tuned by varying the compositional ratio of indium to gallium, spanning the entire visible region and extending…”
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Annealed high band gap tunnel junctions with peak current densities above 800 A/cm2 by Bedair, Salah M., Harmon, Jeffrey L., Carlin, C. Zachary, Hashem Sayed, Islam E., Colter, P. C.

“…The development of high-performance high band gap tunnel junctions is critical for producing efficient multijunction photovoltaic cells that can operate at…”
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A Spin to Remember by Bedair, S M, Zavada, J M, El-Masry, N

“…The authors discovered a magnetic semiconductor material that can store spin orientations at room temperature. This property could be used to build a…”
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Atomic-layer epitaxy for heterostructures by Bedair, Salah M.

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