On the problem of internal optical loss and current leakage in laser heterostructures based on AlGaInAs/InP solid solutions

Semiconductor lasers based on MOCVD-grown AlGaInAs/InP separate-confinement heterostructures are studied. It is shown that raising only the energy-gap width of AlGaInAs-waveguides without the introduction of additional barriers results in more pronounced current leakage into the cladding layers. It...

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Bibliographic Details
Published in:	Semiconductors (Woodbury, N.Y.) Vol. 50; no. 9; pp. 1225 - 1230
Main Authors:	Veselov, D. A., Shashkin, I. S., Bakhvalov, K. V., Lyutetskiy, A. V., Pikhtin, N. A., Rastegaeva, M. G., Slipchenko, S. O., Bechvay, E. A., Strelets, V. A., Shamakhov, V. V., Tarasov, I. S.
Format:	Journal Article
Language:	English
Published:	Moscow Pleiades Publishing 01-09-2016 Springer Springer Nature B.V
Subjects:	ALUMINIUM COMPOUNDS Barrier layers CHANNELING CHEMICAL VAPOR DEPOSITION CLADDING Current leakage DEPLETION LAYER ENERGY GAP GALLIUM ARSENIDES HETEROJUNCTIONS Heterostructures INDIUM PHOSPHIDES INTERFACES Lasers LEAKAGE CURRENT Magnetic Materials Magnetism MATERIALS SCIENCE Physics Physics and Astronomy Physics of Semiconductor Devices QUANTUM EFFICIENCY SEMICONDUCTOR LASERS SEMICONDUCTOR MATERIALS SOLID SOLUTIONS STIMULATED EMISSION Waveguides
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Summary:	Semiconductor lasers based on MOCVD-grown AlGaInAs/InP separate-confinement heterostructures are studied. It is shown that raising only the energy-gap width of AlGaInAs-waveguides without the introduction of additional barriers results in more pronounced current leakage into the cladding layers. It is found that the introduction of additional barrier layers at the waveguide–cladding-layer interface blocks current leakage into the cladding layers, but results in an increase in the internal optical loss with increasing pump current. It is experimentally demonstrated that the introduction of blocking layers makes it possible to obtain maximum values of the internal quantum efficiency of stimulated emission (92%) and continuouswave output optical power (3.2 W) in semiconductor lasers in the eye-safe wavelength range (1400–1600 nm).
ISSN:	1063-7826 1090-6479
DOI:	10.1134/S1063782616090244