Search Results - "Beaupre, R.A."

Integral micro-channel liquid cooling for power electronics by Stevanovic, L.D., Beaupre, R.A., Gowda, A.V., Pautsch, A.G., Solovitz, S.A.

“…A novel integral micro-channel heat sink was developed, featuring an array of sub-millimeter channels fabricated directly in the back-metallization layer of…”
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Low inductance power module with blade connector by Stevanovic, L.D., Beaupre, R.A., Delgado, E.C., Gowda, A.V.

“…A novel single-switch power module has been developed, featuring a laminated blade connector for low inductance interconnect to a busbar. The module was…”
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Microwave power SiC MESFETs and GaN HEMTs by Zhang, A.P., Rowland, L.B., Kaminsky, E.B., Kretchmer, J.W., Beaupre, R.A., Garrett, J.L., Tucker, J.B., Edward, B.J., Foppes, J., Allen, A.F.

“…We have fabricated SiC metal semiconductor field effect transistors (MESFETs) with more than 60 W of output power at 450 MHz from single 21.6 mm gate periphery…”
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Micro-channel thermal management of high power devices by Solovitz, S.A., Stevanovic, L.D., Beaupre, R.A.

“…Heat fluxes in semiconductor power devices have been steadily increasing over the past two decades, now approaching 500 W/cm 2 . This dissipation requires…”
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Microwave power SiC MESFETs and GaN HEMTs by Zhang, A.P., Rowland, L.B., Kaminsky, E.B., Kretchmer, J.W., Beaupre, R.A., Garrett, J.L., Tucker, J.B.

“…We have fabricated SiC MESFETs with more than 60 W of output power at 450 MHz from single 21.6 mm gate periphery devices (2.9 W/mm) and 27 W of output power at…”
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Time-Dependent Dielectric Breakdown of 4H-SiC/[Formula Omitted] MOS Capacitors by Gurfinkel, M, Horst, J.C, Suehle, J.S, Bernstein, J.B, Shapira, Y, Matocha, K.S, Dunne, G, Beaupre, R.A

“…At fields higher than 8.5 MV/cm, the electric field acceleration parameter is about 4.6 cm/MV, indicating a different failure mechanism under high electric…”
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Time-Dependent Dielectric Breakdown of 4H-SiC/ \hbox MOS Capacitors by Gurfinkel, M., Horst, J.C., Suehle, J.S., Bernstein, J.B., Shapira, Y., Matocha, K.S., Dunne, G., Beaupre, R.A.

“…Time-dependent dielectric breakdown (TDDB) is one of the major issues concerning long-range reliability of dielectric layers in SiC-based high-power devices…”
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