Search Results - "Beaumel, M."

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    In-Flight Dark Current Nonuniformity Used for Space Environment Model Benchmarking by Inguimbert, C., Bourdarie, S., Beaumel, M., Ursule, M. C., Ecoffet, R.

    Published in IEEE transactions on nuclear science (01-08-2018)
    “…In-flight dark current nonuniformity measurements performed on three different satellites [JASON-2, SPRINT-A, and SAT-X (name withheld)] are compared to ground…”
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    Journal Article
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    Modeling the Dark Current Non-Uniformity of Image Sensors With GEANT4 by Inguimbert, C., Nuns, T., Ursule, M. C., Falguere, D., Herve, D., Beaumel, M., Poizat, M.

    Published in IEEE transactions on nuclear science (01-12-2014)
    “…The 3D Monte Carlo transport code GEANT 4 was used to simulate the Dark Current Non Uniformity of image sensors. The method includes three different physical…”
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    Journal Article
  4. 4

    SEGR Study on Power MOSFETs: Multiple Impacts Assumption by Peyre, D., Poivey, C., Binois, C., Mangeret, R., Salvaterra, G., Beaumel, M., Pontoni, F., Bouchet, T., Pater, L., Bezerra, F., Ecoffet, R., Lorfevre, E., Sturesson, F., Berger, G., Foy, J.C., Piquet, B.

    Published in IEEE transactions on nuclear science (01-08-2008)
    “…This paper presents experimental data showing heavy ions inducing gate degradation in power MOSFETs. In the experiments, backside and front-side irradiations…”
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    Journal Article
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    Cobalt-60, proton and electron irradiation of a radiation-hardened active pixel sensor by Herve, D., Beaumel, M., Van Aken, D.

    “…We present the key results of multiple radiation characterization campaigns of the HAS2 radiation-hardened active pixel sensor (APS). These characterizations…”
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    Conference Proceeding
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    A simple method for optocouplers selection in the frame of space applications by Peyre, D., Binois, C., Mendenhall, M. H., Weller, R. A., Mangeret, R., Salvaterra, G., Montay, G., Beutier, T., Beaumel, M., Sorensen, R. H., Poivey, C.

    “…Proton irradiations were performed on three types of optocouplers at three energies 60 MeV, 100 MeV and 200 MeV, followed by a TID irradiation up to 75 kRAD…”
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    Conference Proceeding
  13. 13

    SEGR study on Power MOSFETs: Multiple impacts assumption by Peyre, D., Binois, C., Mangeret, R., Salvaterra, G., Beaumel, M., Pontoni, F., Bouchet, T., Pater, L., Bezerra, F., Ecoffet, R., Lorfevre, E., Sturesson, F., Poivey, C., Berger, G., Foy, J.C., Piquet, B.

    “…The main emphasis of this study is the investigation of the gate degradation or rupture, aiming to determine the nature of the so-called SEGR phenomena. This…”
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    Conference Proceeding