Search Results - "Bayot, Vincent"

Nanoscale Control of Polymer Crystallization by Nanoimprint Lithography by Hu, Zhijun, Baralia, Gabriel, Bayot, Vincent, Gohy, Jean-François, Jonas, Alain M

“…Polymer crystallization is notoriously difficult to control. Here, we demonstrate that the orientation of polymer crystals can be fully controlled at the…”
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Wigner and Kondo physics in quantum point contacts revealed by scanning gate microscopy by Brun, B., Martins, F., Faniel, S., Hackens, B., Bachelier, G., Cavanna, A., Ulysse, C., Ouerghi, A., Gennser, U., Mailly, D., Huant, S., Bayot, V., Sanquer, M., Sellier, H.

“…Quantum point contacts exhibit mysterious conductance anomalies in addition to well-known conductance plateaus at multiples of 2 e 2 / h . These 0.7 and…”
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On the origins of transport inefficiencies in mesoscopic networks by Toussaint, Sébastien, Martins, Frederico, Faniel, Sébastien, Pala, Marco G., Desplanque, Ludovic, Wallart, Xavier, Sellier, Hermann, Huant, Serge, Bayot, Vincent, Hackens, Benoit

“…A counter-intuitive behavior analogous to the Braess paradox is encountered in a two-terminal mesoscopic network patterned in a two-dimensional electron system…”
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Transport inefficiency in branched-out mesoscopic networks: an analog of the Braess paradox by Pala, M G, Baltazar, S, Liu, P, Sellier, H, Hackens, B, Martins, F, Bayot, V, Wallart, X, Desplanque, L, Huant, S

“…We present evidence for a counterintuitive behavior of semiconductor mesoscopic networks that is the analog of the Braess paradox encountered in classical…”
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Electron Phase Shift at the Zero-Bias Anomaly of Quantum Point Contacts by Brun, B, Martins, F, Faniel, S, Hackens, B, Cavanna, A, Ulysse, C, Ouerghi, A, Gennser, U, Mailly, D, Simon, P, Huant, S, Bayot, V, Sanquer, M, Sellier, H

“…The Kondo effect is the many-body screening of a local spin by a cloud of electrons at very low temperature. It has been proposed as an explanation of the…”
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Imaging Coulomb islands in a quantum Hall interferometer by Hackens, B, Martins, F, Faniel, S, Dutu, C.A, Sellier, H, Huant, S, Pala, M, Desplanque, L, Wallart, X, Bayot, V

“…In the quantum Hall regime, near integer filling factors, electrons should only be transmitted through spatially separated edge states. However, in mesoscopic…”
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A new transport phenomenon in nanostructures: a mesoscopic analog of the Braess paradox encountered in road networks by Pala, Marco, Sellier, Hermann, Hackens, Benoit, Martins, Frederico, Bayot, Vincent, Huant, Serge

“…The Braess paradox, known for traffic and other classical networks, lies in the fact that adding a new route to a congested network in an attempt to relieve…”
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Coherent tunnelling across a quantum point contact in the quantum Hall regime by Martins, F., Faniel, S., Rosenow, B., Sellier, H., Huant, S., Pala, M. G., Desplanque, L., Wallart, X., Bayot, V., Hackens, B.

“…The unique properties of quantum hall devices arise from the ideal one-dimensional edge states that form in a two-dimensional electron system at high magnetic…”
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Scanning gate spectroscopy of transport across a quantum Hall nano-island by Martins, F, Faniel, S, Rosenow, B, Pala, M G, Sellier, H, Huant, S, Desplanque, L, Wallart, X, Bayot, V, Hackens, B

“…We explore transport across an ultra-small quantum Hall island (QHI) formed by closed quantum Hall edge states and connected to propagating edge channels…”
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Direct protein detection with a nano-interdigitated array gate MOSFET by Tang, Xiaohui, Jonas, Alain M., Nysten, Bernard, Demoustier-Champagne, Sophie, Blondeau, Franoise, Prévot, Pierre-Paul, Pampin, Rémi, Godfroid, Edmond, Iñiguez, Benjamin, Colinge, Jean-Pierre, Raskin, Jean-Pierre, Flandre, Denis, Bayot, Vincent

“…A new protein sensor is demonstrated by replacing the gate of a metal oxide semiconductor field effect transistor (MOSFET) with a nano-interdigitated array…”
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Nanowire-Decorated Microscale Metallic Electrodes by Vlad, Alexandru, Mátéfi-Tempfli, Mária, Antohe, Vlad A., Faniel, Sébastien, Reckinger, Nicolas, Olbrechts, Benoit, Crahay, André, Bayot, Vincent, Piraux, Luc, Melinte, Sorin, Mátéfi-Tempfli, Stefan

“…A versatile fabrication approach for the realization of complex vertical nanowire architectures on top of photolithographically patterned microscale metallic…”
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Imaging coherent transport in a mesoscopic graphene ring by Cabosart, Damien, Faniel, Sébastien, Martins, Frederico, Brun, Boris, Felten, Alexandre, Bayot, Vincent, Hackens, Benoit

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Schottky barrier lowering with the formation of crystalline Er silicide on n-Si upon thermal annealing by Reckinger, Nicolas, Tang, Xiaohui, Bayot, Vincent, Yarekha, Dmitri A., Dubois, Emmanuel, Godey, Sylvie, Wallart, Xavier, Larrieu, Guilhem, Łaszcz, Adam, Ratajczak, Jacek, Jacques, Pascal J., Raskin, Jean-Pierre

“…The evolution of the Schottky barrier height (SBH) of Er silicide contacts to n-Si is investigated as a function of the annealing temperature. The SBH is found…”
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Schottky barrier lowering with the formation of crystalline Er silicideon n -Si upon thermal annealing by Reckinger, Nicolas, Tang, Xiaohui, Bayot, Vincent, Yarekha, Dmitri A., Dubois, Emmanuel, Godey, Sylvie, Wallart, Xavier, Larrieu, Guilhem, Łaszcz, Adam, Ratajczak, Jacek, Jacques, Pascal J., Raskin, Jean-Pierre

“…The evolution of the Schottky barrier height (SBH) of Er silicide contacts to n -Si is investigated as a function of the annealing temperature. The SBH is…”
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A Simple Method for Measuring Si-Fin Sidewall Roughness by AFM by Xiaohui Tang, Bayot, V., Reckinger, N., Flandre, D., Raskin, J.-P., Dubois, E., Nysten, B.

“…The gate oxide reliability and the electrical behavior of FinFETs are directly related to the surface characteristics of the fin vertical sidewalls. The…”
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Nonlinear electron transport properties of InAlAs/InGaAs based Y-branch junctions for microwave rectification at room temperature by Rashmi, Bednarz, Lukasz, Hackens, Benoit, Farhi, Ghania, Bayot, Vincent, Huynen, Isabelle

“…A detailed analysis of nonlinear effects-electron switching and rectification, in InAlAs/InGaAs based Y-branch junction (YBJ) devices is presented to…”
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Unified model of fractal conductance fluctuations for diffusive and ballistic semiconductor devices by Marlow, C. A., Taylor, R. P., Martin, T. P., Scannell, B. C., Linke, H., Fairbanks, M. S., Hall, G. D. R., Shorubalko, I., Samuelson, L., Fromhold, T. M., Brown, C. V., Hackens, B., Faniel, S., Gustin, C., Bayot, V., Wallart, X., Bollaert, S., Cappy, A.

“…We present an experimental comparison of magnetoconductance fluctuations measured in the ballistic, quasiballistic, and diffusive scattering regimes of…”
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Process Optimization and Downscaling of a Single-Electron Single Dot Memory by Krzeminski, C., Xiaohui Tang, Reckinger, N., Bayot, V., Dubois, E.

“…This paper presents the process optimization of a single-electron nanoflash electron memory. Self-aligned single dot memory structures have been fabricated…”
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Fabrication and room-temperature single-charging behavior of self-aligned single-dot memory devices by Xiaohui, Tang, Reckinger, Nicolas, Bayot, Vincent, Krzeminski, Christophe, Dubois, Emmanuel, Villaret, Alexandre, Bensahel, Daniel

“…Self-aligned single-dot memory devices and arrays were fabricated based on arsenic-assisted etching and oxidation effects. The resulting device has a floating…”
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Schottky barrier lowering with the formation of crystalline Er silicide on n-Si upon thermal annealing by Reckinger, Nicolas, Bayot, Xiaohui Tang Vincent, Yarekha, Dmitri A, Dubois, Emmanuel, Godey, Sylvie, Wallart, Xavier, Larrieu, Guilhem, Laszcz, Adam, Ratajczak, Jacek, Jacques, Pascal J, Raskin, Jean-Pierre

“…Applied Physics Letters 94, 191913, 2009 The evolution of the Schottky barrier height (SBH) of Er silicide contacts to n-Si is investigated as a function of…”
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