Search Results - "Bayazitov, R.M."

Effect of pulsed ion-beam treatment on the electronic and optical properties of GaN epitaxial films on sapphire by Zatsepin, D.A., Boukhvalov, D.W., Buntov, E.A., Zatsepin, A.F., Batalov, R.I., Novikov, H.A., Bayazitov, R.M.

“…[Display omitted] •GaN films on Al2O3 substrate were storage 1.5 years and then treated by pulsed ion-beam.•Experiments and modeling evidence acidification of…”
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Radiation-induced defects in sapphire single crystals irradiated by a pulsed ion beam by Ananchenko, D.V., Nikiforov, S.V., Kuzovkov, V.N., Popov, A.I., Ramazanova, G.R., Batalov, R.I., Bayazitov, R.M., Novikov, H.A.

“…The luminescence and thermal stability of defects formed in α-Al2O3 single crystals after powerful (300 keV) pulsed irradiation with C+/H+ ion beam were…”
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Pulse ion annealing of silicon layers with silver nanoparticles formed by ion implantation by Stepanov, A.L., Batalov, R.I., Bayazitov, R.M., Rogov, A.M.

“…The paper presents the results of Si surface modification created by implantation with Ag+ ions at energy of 30 keV, current density of 8 μA/cm2 for various…”
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Formation of heavily doped semiconductor layers by pulsed ion beam treatment by Bayazitov, R.M., Zakirzyanova, L.Kh, Khaibullin, I.B., Remnev, G.E.

“…The formation of heavily doped Si and GaAs layers using implantation and powerful pulsed ion beams has been investigated. The influence of the depth…”
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Fabrication of composite based on GeSi with Ag nanoparticles using ion implantation by Batalov, R. I., Vorobev, V. V., Nuzhdin, V. I., Valeev, V. F., Bayazitov, R. M., Lyadov, N. M., Osin, Yu. N., Stepanov, A. L.

“…Comparative analysis of the structural and optical properties of composite layers fabricated with the aid of implantation of single-crystalline silicon ( c…”
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Optical diagnostics of the laser-induced phase transformations in thin germanium films on silicon, sapphire, and fused silica by Novikov, H. A., Batalov, R. I., Bayazitov, R. M., Faizrakhmanov, I. A., Ivlev, G. D., Prokop’ev, S. L.

“…The in-situ procedure is used to study the modification of thin (200–600 nm) germanium films induced by nanosecond pulses of a ruby laser. The films are…”
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Pulsed modification of germanium films on silicon, sapphire, and quartz substrates: Structure and optical properties by Novikov, H. A., Batalov, R. I., Bayazitov, R. M., Faizrakhmanov, I. A., Lyadov, N. M., Shustov, V. A., Galkin, K. N., Galkin, N. G., Chernev, I. M., Ivlev, G. D., Prokop’ev, S. L., Gaiduk, P. I.

“…The structural and optical properties of thin Ge films deposited onto semiconducting and insulating substrates and modified by pulsed laser radiation are…”
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Pulsed nanosecond annealing of magnesium-implanted silicon by Galkin, N. G., Vavanova, S. V., Galkin, K. N., Batalov, R. I., Bayazitov, R. M., Nuzhdin, V. I.

“…Single-crystalline silicon is implanted by magnesium ions at room temperature and then subjected to pulsed ion-beam annealing. The surface morphology,…”
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Influence of [Cr.sup.+] ion implantation and pulsed ion-beam annealing on the formation and optical properties of Si/Cr[Si.sub.2]/Si heterostructures by Galkin, N.G, Goroshko, D.L, Galkin, K.N, Vavanova, S.V, Petrushkin, I.A, Maslov, A.M, Batalov, R.I, Bayazitov, R.M, Shustov, V.A

“…The effect of pulsed ion-beam annealing on the surface morphology, structure, and composition of single-crystal Si(111) wafers implanted by chromium ions with…”
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Dynamics of photo-ionization, heating and crystallization of implanted silicon during laser annealing by Ivlev, G.D., Gatzkevich, E.I., Bayazitov, R.M., Batalov, R.I., Khaibullin, I.B.

“…The dynamics of the nanosecond laser annealing of the implanted silicon by probing the implanted layer with infrared radiation (1.06μm) in the conditions of…”
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A pulsed synthesis of β-FeSi 2 layers on silicon implanted with Fe + ions by Terukov, E.I., Kudoyarova, V.Kh, Batalov, R.I., Bayazitov, R.M.

“…Continuous layers and fine-grained films of β-FeSi 2 were synthesized using the implantation of Fe + ions into Si (1 0 0) with subsequent pulsed nanosecond…”
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Structure and photoluminescent properties of SiC layers on Si, synthesized by pulsed ion-beam treatment by Bayazitov, R.M., Khaibullin, I.B., Batalov, R.I., Nurutdinov, R.M., Antonova, L.Kh, Aksenov, V.P., Mikhailova, G.N.

“…We report the formation of the continuous β-SiC layers on Si by means of C + implantation into Si followed by pulsed ion-beam treatment (C +, 300 keV, 50 ns)…”
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Heating and photoionization of silicon structures at laser treatments by Bayazitov, R.M.

“…The processes of light absorption, generation of electron-hole pairs and thermal heating of thin-film silicon structures under the action of high-power…”
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A pulsed synthesis of β-FeSi2 layers on silicon implanted with Fe+ ions by Terukov, E.I., Kudoyarova, V.Kh, Batalov, R.I., Bayazitov, R.M.

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Annealing of europium-implanted silicon by nanosecond ion-beam pulses by Stepanov, A.L., Bayazitov, R.M., Khaibullin, I.B., Hole, D.E.

“…Ion implantation into Si(100) was made with Eu + ions at 25 keV to doses of 1.2 x 10 15 and 1.2 x 10 16 ions cm -2…”
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Formation of Si-based light-emitting structures by ion implantation and pulsed treatments by Bayazitov, R.M., Batalov, R.I.

“…The creation of Si-based light-emitting structures by continuous ion implantation and nanosecond pulsed annealing is reviewed by the example of Si:Er and…”
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Laser annealing of implanted silicon with temperature-controlled transparency by Bayazitov, R.M., Galyautdinov, M.F., Batalov, R.I., Khaibullin, I.B., Groetzchel, R.

“…Laser annealing of the implanted silicon layers at temperatures 4.2–300 K was performed. It was shown that when the ambient temperature is lowered from 300 to…”
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Investigation of silicon implanted with carbon ions by Bulyarskii, S. V., Ambrozevich, A. S., Moliver, S. S., Dzhabrailov, T. A., Bayazitov, R. M., Batalov, R. I.

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Backside-Laser Annealing of Silicon at Low Temperature by Antonova, L.K., Bayazitov, R.M., Galyautdinov, M.F., Grotzchel, R.

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