Search Results - "Bay, H L"

1
Epitaxial growth and characterization of Fe thin films on wurtzite GaN(0 0 0 1) by Meijers, R., Calarco, R., Kaluza, N., Hardtdegen, H., Ahe, M.v.d., Bay, H.L., Lüth, H., Buchmeier, M., Bürgler, D.E.

Published in Journal of crystal growth (01-10-2005)
“…Fe films of different thicknesses were deposited on wurtzite GaN(0 0 0 1) layers by electron beam evaporation. They were studied by a number of…”

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New method for the in situ determination of AlxGa1-xN composition in MOVPE by real-time optical reflectance by HARDTDEGEN, H, KALUZA, N, STRITTMATTER, A, REISSMANN, L, BIMBERG, D, ZETTLER, J.-T, SOFER, Z, CHO, Y. S, STEINS, R, BAY, H. L, DIKME, Y, KALISCH, H, JANSEN, R. H, HEUKEN, M

Published in Physica status solidi. A, Applications and materials science (Print) (01-05-2006)

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3
Molecular beam epitaxy of Ru2Si3 on silicon by LENSSEN, D, LENK, S, BAY, H. L, MANTL, S

Published in Thin solid films (01-08-2000)

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4
Structural, electrical and optical characterization of semiconducting Ru2Si3 by LENSSEN, D, CARIUS, R, MESTERS, S, GUGGI, D, BAY, H. L, MANTL, S

Published in Microelectronic engineering (2000)

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5
Influence of the reactor inlet configuration on the AlGaN growth efficiency by Yakovlev, E.V., Talalaev, R.A., Kaluza, N., Hardtdegen, H., Bay, H.L.

Published in Journal of crystal growth (2007)
“…This paper discusses the results of a combined modeling and experimental analysis of AlGaN deposition in the horizontal two-flow AIX 200/4 RF-S reactor. The…”

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6
Growth and structural characterization of semiconducting Ru2Si3 by LENSSEN, D, BAY, H. L, MESTERS, S, DIEKER, C, GUGGI, D, CARIUS, R, MANTL, S

Published in Journal of luminescence (01-12-1998)

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7
Self-ordering of CoSi2 precipitates and epitaxial layer growth of CoSi2 on Si(100) by MANTL, S, HACKE, M, BAY, H. L, KAPPIUS, L, MESTERS, S

Published in Thin solid films (26-05-1998)

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8
MBE growth and characterization of buried silicon oxide films on Si(100) by Hacke, M., Bay, H.L., Mantl, S.

Published in Thin solid films (01-07-1996)
“…Silicon molecular beam epitaxy (Si-MBE) has been used to produce silicon oxide (SiO x ) films by evaporating Si on a heated Si(100) substrate in an ultra high…”

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9
Retarded diffusion of boron in Si due to the formation of an epitaxial CoSi2 layer by KAPPIUS, L, BAY, H. L, MANTL, S, TYAGI, A. K, BREUER, U, BECKER, J. S

Published in Thin solid films (30-12-1998)

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10
On the velocity distribution of excited Fe-atoms by sputtering of iron by Schweer, B., Bay, H. L.

Published in Applied Physics A Solids and Surfaces (01-10-1982)

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11
New method for the in situ determination of Alx Ga1-x N composition in MOVPE by real-time optical reflectance by Hardtdegen, H., Kaluza, N., Sofer, Z., Cho, Y. S., Steins, R., Bay, H. L., Dikme, Y., Kalisch, H., Jansen, R. H, Heuken, M., Strittmatter, A., Reißmann, L., Bimberg, D., Zettler, J.-T.

Published in Physica status solidi. A, Applications and materials science (01-05-2006)
“…This paper reports on the in situ determination of the Al‐content in Alx Ga1–x N layers deposited by MOVPE on sapphire and silicon substrates by means of…”

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12
Energy transfer to a copper surface by low energy noble gas ion bombardment by Bay, H. L., Winters, H. F., Coufal, H. J., Eckstein, W.

Published in Applied Physics A Solids and Surfaces (01-09-1992)

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13
New method for epitaxial heterostructure layer growth by MANTL, S, BAY, H. L

Published in Applied physics letters (20-07-1992)
“…A new method for the fabrication of compound thin films inside single-crystalline matrices is demonstrated. It differs from all known techniques by the…”

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14
Investigation of partial sputtering of lithium from a binary Al/Li alloy with laser induced fluorescence by Schorn, R. P., Bay, H. L., Hintz, E., Schweer, B.

Published in Applied Physics A Solids and Surfaces (01-06-1987)

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15
An investigation of laser-induced fluorescence for measuring velocity distributions of neutral atoms using a CW dye laser by Berres, W., Rusb ldt, D., Hintz, E., Bay, H. L.

Published in Applied Physics B Photophysics and Laser Chemistry (01-10-1984)

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16
Patterning method for silicides based on local oxidation by Mantl, S., Dolle, M., Mesters, St, Fichtner, P. F. P., Bay, H. L.

Published in Applied physics letters (04-12-1995)
“…Oxidation of CoSi2 layers on Si(100) using oxidation masks has been investigated. It is shown that local oxidation can be used to pattern the silicide layer…”

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17
The velocity distribution of sputtered Zr atoms for irradiation at normal and oblique angle of incidence by Berres, W., Bay, H. L.

Published in Applied Physics A Solids and Surfaces (01-04-1984)

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18
New approaches for growth control of GaN-based HEMT structures by Hardtdegen, H., Steins, R., Kaluza, N., Cho, Y.S., Wirtz, K., von der Ahe, M., Bay, H.L., Heidelberger, G., Marso, M.

Published in Applied physics. A, Materials science & processing (01-06-2007)

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19
Angular distribution and differential sputtering yields for low-energy light-ion irradiation of polycrystalline nickel and tungsten by Bay, H. L., Bohdansky, J., Hofer, W. O., Roth, J.

Published in Applied Physics (01-04-1980)

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20
New approaches for growth control of GaN-based HEMT structures: From surface science to nanoscale devices by HARDTDEGEN, H, STEINS, R, KALUZA, N, CHO, Y. S, WIRTZ, K, VON DER AHE, M, BAY, H. L, HEIDELBERGER, G, MARSO, M

Published in Applied physics. A, Materials science & processing (2007)

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Search Results - "Bay, H L"

Epitaxial growth and characterization of Fe thin films on wurtzite GaN(0 0 0 1) by Meijers, R., Calarco, R., Kaluza, N., Hardtdegen, H., Ahe, M.v.d., Bay, H.L., Lüth, H., Buchmeier, M., Bürgler, D.E.

New method for the in situ determination of AlxGa1-xN composition in MOVPE by real-time optical reflectance by HARDTDEGEN, H, KALUZA, N, STRITTMATTER, A, REISSMANN, L, BIMBERG, D, ZETTLER, J.-T, SOFER, Z, CHO, Y. S, STEINS, R, BAY, H. L, DIKME, Y, KALISCH, H, JANSEN, R. H, HEUKEN, M

Molecular beam epitaxy of Ru2Si3 on silicon by LENSSEN, D, LENK, S, BAY, H. L, MANTL, S

Structural, electrical and optical characterization of semiconducting Ru2Si3 by LENSSEN, D, CARIUS, R, MESTERS, S, GUGGI, D, BAY, H. L, MANTL, S

Influence of the reactor inlet configuration on the AlGaN growth efficiency by Yakovlev, E.V., Talalaev, R.A., Kaluza, N., Hardtdegen, H., Bay, H.L.

Growth and structural characterization of semiconducting Ru2Si3 by LENSSEN, D, BAY, H. L, MESTERS, S, DIEKER, C, GUGGI, D, CARIUS, R, MANTL, S

Self-ordering of CoSi2 precipitates and epitaxial layer growth of CoSi2 on Si(100) by MANTL, S, HACKE, M, BAY, H. L, KAPPIUS, L, MESTERS, S

MBE growth and characterization of buried silicon oxide films on Si(100) by Hacke, M., Bay, H.L., Mantl, S.

Retarded diffusion of boron in Si due to the formation of an epitaxial CoSi2 layer by KAPPIUS, L, BAY, H. L, MANTL, S, TYAGI, A. K, BREUER, U, BECKER, J. S

On the velocity distribution of excited Fe-atoms by sputtering of iron by Schweer, B., Bay, H. L.

New method for the in situ determination of Alx Ga1-x N composition in MOVPE by real-time optical reflectance by Hardtdegen, H., Kaluza, N., Sofer, Z., Cho, Y. S., Steins, R., Bay, H. L., Dikme, Y., Kalisch, H., Jansen, R. H, Heuken, M., Strittmatter, A., Reißmann, L., Bimberg, D., Zettler, J.-T.

Energy transfer to a copper surface by low energy noble gas ion bombardment by Bay, H. L., Winters, H. F., Coufal, H. J., Eckstein, W.

New method for epitaxial heterostructure layer growth by MANTL, S, BAY, H. L

Investigation of partial sputtering of lithium from a binary Al/Li alloy with laser induced fluorescence by Schorn, R. P., Bay, H. L., Hintz, E., Schweer, B.

An investigation of laser-induced fluorescence for measuring velocity distributions of neutral atoms using a CW dye laser by Berres, W., Rusb ldt, D., Hintz, E., Bay, H. L.

Patterning method for silicides based on local oxidation by Mantl, S., Dolle, M., Mesters, St, Fichtner, P. F. P., Bay, H. L.

The velocity distribution of sputtered Zr atoms for irradiation at normal and oblique angle of incidence by Berres, W., Bay, H. L.

New approaches for growth control of GaN-based HEMT structures by Hardtdegen, H., Steins, R., Kaluza, N., Cho, Y.S., Wirtz, K., von der Ahe, M., Bay, H.L., Heidelberger, G., Marso, M.

Angular distribution and differential sputtering yields for low-energy light-ion irradiation of polycrystalline nickel and tungsten by Bay, H. L., Bohdansky, J., Hofer, W. O., Roth, J.

New approaches for growth control of GaN-based HEMT structures: From surface science to nanoscale devices by HARDTDEGEN, H, STEINS, R, KALUZA, N, CHO, Y. S, WIRTZ, K, VON DER AHE, M, BAY, H. L, HEIDELBERGER, G, MARSO, M

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