Search Results - "Baumann, FH"

The electronic structure at the atomic scale of ultrathin gate oxides by Muller, D. A, Sorsch, T, Moccio, S, Baumann, F. H, Evans-Lutterodt, K, Timp, G

“…The narrowest feature on present-day integrated circuits is the gate oxide-the thin dielectric layer that forms the basis of field-effect device structures…”
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Two-Dimensional Mapping of the Electrostatic Potential in Transistors by Electron Holography by Rau, W. D., Schwander, P., Baumann, F. H., Höppner, W., Ourmazd, A.

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Depth profiling of vacancy clusters in MeV-implanted Si using Au labeling by Venezia, V. C., Eaglesham, D. J., Haynes, T. E., Agarwal, Aditya, Jacobson, D. C., Gossmann, H.-J., Baumann, F. H.

“…A technique for profiling the clustered-vacancy region produced by high-energy ion implantation into silicon is described and tested. This technique takes…”
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An approach to quantitative high-resolution transmission electron microscopy of crystalline materials by Kisielowski, C., Schwander, P., Baumann, F.H., Seibt, M., Kim, Y., Ourmazd, A.

“…We describe how lattice images may be used to measure the variation of the projected potential in crystalline solids in any projection, with no knowledge of…”
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Mapping projected potential, interfacial roughness, and composition in general crystalline solids by quantitative transmission electron microscopy by SCHWANDER, P, KISIELOWSKI, C, SEIBT, M, BAUMANN, F. H, KIM, Y, OURMAZD, A

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Impact of gate-poly grain structure on the gate-oxide reliability [CMOS] by Kamgar, A., Vaidya, H.M., Baumann, F.H., Nakahara, S.

“…Time dependent dielectric breakdown of thin oxides, 1.5 to 5.0 nm has been studied for different gate-poly grain structures. The poly grain was varied by the…”
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Real-space analysis of lattice images and its link to conventional theory by Maurice, J.-L., Schwander, P., Baumann, F.H., Ourmazd, A.

“…We show that real-space analysis of lattice images in terms of multidimensional vectors rests on a small number of physically significant dimensions, each…”
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Capture of vacancies by extrinsic dislocation loops in silicon by Herner, S. B., Gossmann, H.-J., Baumann, F. H., Gilmer, G. H., Jacobson, D. C., Jones, K. S.

“…The capture of a flux of vacancies in Si by a band of extrinsic dislocation loops has been observed in Sb doping superlattices. Annealing Sb doping…”
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Multilayers as microlabs for point defects: Effect of strain on diffusion in semiconductors by Baumann, FH, Huang, JH, Rentschler, JA, Chang, TY, Ourmazd, A

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Characterization of stacked gate oxides by electron holography by Rau, W.-D., Baumann, F. H., Rentschler, J. A., Roy, P. K., Ourmazd, A.

“…We have used off-axis electron holography at a resolution of 3 Å to investigate amorphous bilayer gate oxides consisting of thermal and chemically deposited…”
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Low field mobility of ultra-thin SOI N- and P-MOSFETs: Measurements and implications on the performance of ultra-short MOSFETs by Esseni, D., Mastrapasqua, M., Celler, G.K., Baumann, F.H., Fiegna, C., Selmi, L., Sangiorgi, E.

“…Electron and hole effective mobilities of ultra-thin SOI N- and P-MOSFETs have been measured at different temperatures using a special test structure able to…”
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Effect of implant damage on the gate oxide thickness by Vuong, H.-H, Bude, J, Baumann, F.H, Evans-Lutterodt, K, Ning, J, Ma, Y, Mcmacken, J, Gossmann, H.-J, Silverman, P, Rafferty, C.S, Hillenius, S.J

“…Large area capacitors were fabricated with doping and oxide thickness representative of an n-MOSFET channel region. Capacitance–voltage ( C– V) measurements on…”
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Chemical characterization of (In,Ga)As/(Al,Ga)As strained interfaces grown by metalorganic chemical vapor deposition by KIM, J, ALWAN, J. J, FORBES, D. V, COLEMAN, J. J, ROBERTSON, I. M, WAYMAN, C. M, BAUMANN, F. H, BODE, M, KIM, Y, OURMAZD, A

“…We have used quantitative chemical mapping to determine the chemical abruptness of interfaces in In0.2Ga0.8As/Al0.2Ga0.8As strained multilayers grown by…”
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Interface Properties of Strained InGaAs/InP Quantum Wells Grown by LP-MOVPE by Schwedler, R., Gallmann, B., Wolter, K., Kohl, A., Leo, K., Kurz, H., Juillaguet, S., Camassel, J., Laurenti, J. P., Baumann, F. H.

“…We have analysed ultrathin (5-10 monolayers) In 1-x Ga x As/InP (0.17 < x > 1) quantum wells grown by low-pressure metal organic vapour phase epitaxy using…”
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Scanning capacitance microscopy imaging of silicon metal-oxide-semiconductor field effect transistors by Kleiman, R. N., O’Malley, M. L., Baumann, F. H., Garno, J. P., Timp, G. L.

“…We have studied cross-sectioned n- and p-metal-oxide-semiconductor field effect transistors with gate lengths approaching 60 nm using a scanning capacitance…”
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50 nm Vertical Replacement-Gate (VRG) pMOSFETs by Sang-Hyun Oh, Hergenrother, J.M., Nigam, T., Monroe, D., Klemens, F.P., Kornblit, A., Mansfield, W.M., Baker, M.R., Barr, D.L., Baumann, F.H., Bolan, K.J., Boone, T., Ciampa, N.A., Cirelli, R.A., Eaglesham, D.J., Ferry, E.J., Fiory, A.T., Frackoviak, J., Garno, J.P., Gossmann, H.J., Grazul, J.L., Green, M.L., Hillenius, S.J., Johnson, R.W., Keller, R.C., King, C.A., Kleiman, R.N., Lee, J.T.-C., Miner, J.F., Morris, M.D., Rafferty, C.S., Rosamilia, J.M., Short, K., Sorsch, T.W., Timko, A.G., Weber, G.R., Wilk, G.D., Plummer, J.D.

“…We present the first p-channel Vertical Replacement-Gate (VRG) MOSFETs. Like the VRG-nMOSFETs demonstrated last year, these devices show promise as a successor…”
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Dependence of gate oxide dielectric breakdown on S/D RTA by Kamgar, A., Vaidya, H.M., Baumann, F.H.

“…We have studied time dependent dielectric breakdown (TDDB) of very thin gate oxides, down to 1.5 nm, and have found unusual dependence on certain processing…”
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3D modeling of sputter and reflow processes for interconnect metals by Baumann, F.H., Gilmer, G.H.

“…We report full 3D Monte Carlo (MC) and molecular dynamics (MD) simulations of aluminum sputtering and reflow. The topography evolution and surface diffusion…”
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Precipitation of gold into metastable gold silicide in silicon by BAUMANN, F. H, SCHROÊTER, W

“…We report a detailed investigation of the precipitation behavior of gold in float-zone silicon from a highly supersaturated solution. Nucleation, morphology,…”
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Two-dimensional dopant profiling of deep submicron MOS devices by electron holography by Rau, W.-D., Baumann, F.H., Vuong, H.-H., Heinemann, B., Hoppner, W., Rafferty, C.S., Rucker, H., Schwander, P., Ourmazd, A.

“…We show that electron holography can be used to obtain high resolution two-dimensional maps of deep submicron CMOS structures. Our results can be summarized as…”
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