Analytical Modelling and Simulation of a Junctionless Accumulation-Mode Tube (JLAMT) Field-Effect Transistor (FET) for Radiation Sensing Dosimeter Applications

Analytical Modelling and Simulation of a Junctionless Accumulation-Mode Tube (JLAMT) Field-Effect Transistor (FET) for Radiation Sensing Dosimeter Applications

In this paper, an analytical model for a junctionless accumulation-mode-based nanotube field-effect transistor (JLAM-NT-FET) is proposed for radiation sensing dosimeter applications. The drift in electrical parameters including potential, threshold voltage ( V th ), drain current ( I ), and subthres...

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Bibliographic Details
Published in:Journal of electronic materials Vol. 52; no. 6; pp. 3604 - 3612
Main Authors: Batra, Sia, Rewari, Sonam
Format: Journal Article
Language:English
Published: New York Springer US 01-06-2023
Springer Nature B.V
Subjects:
Accumulation
Boundary conditions
Characterization and Evaluation of Materials
Chemistry and Materials Science
Dosimeters
Electronics and Microelectronics
Electrons
Field effect transistors
Instrumentation
Materials Science
Mathematical models
Optical and Electronic Materials
Original Research Article
Radiation
Semiconductor devices
Silicon
Simulation
Solid State Physics
Threshold voltage
Transistors
trap charges
FET
radiation
dielectric engineered
Silicon
transconductance
dosimeter
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Summary:In this paper, an analytical model for a junctionless accumulation-mode-based nanotube field-effect transistor (JLAM-NT-FET) is proposed for radiation sensing dosimeter applications. The drift in electrical parameters including potential, threshold voltage ( V th ), drain current ( I ), and subthreshold slope (SS) for different values of interface trap charge is studied in depth. The numerical findings accord well with the those of the simulation, and the numerical/analytical results are also validated at different channel lengths. The sensitivity of the proposed design is compared with the conventional junctionless FET for dosimeter applications by analysing the differences in I ds , I ON / I OFF ratio, g m , SS, V th and sensitivity. The results indicate that the JLAM-FET demonstrates better radiation sensing than the conventional junctionless FET.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-023-10240-0