Search Results - "Bathen, M. E."

Strain Modulation of Si Vacancy Emission from SiC Micro- and Nanoparticles by Vásquez, G. C, Bathen, M. E, Galeckas, A, Bazioti, C, Johansen, K. M, Maestre, D, Cremades, A, Prytz, Ø, Moe, A. M, Kuznetsov, A. Yu, Vines, L

“…Single-photon emitting point defects in semiconductors have emerged as strong candidates for future quantum technology devices. In the present work, we exploit…”
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Electrical charge state identification and control for the silicon vacancy in 4H-SiC by Bathen, M. E., Galeckas, A., Müting, J., Ayedh, H. M., Grossner, U., Coutinho, J., Frodason, Y. K., Vines, L.

“…Reliable single-photon emission is crucial for realizing efficient spin-photon entanglement and scalable quantum information systems. The silicon vacancy ( V…”
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The Diamond (111) Surface Reconstruction and Epitaxial Graphene Interface by Reed, B. P, Bathen, M. E, Ash, J. W. R, Meara, C. J, Zakharov, A. A, Goss, J. P, Wells, J. W, Evans, D. A, Cooil, S. P

“…The evolution of the diamond (111) surface as it undergoes reconstruction and subsequent graphene formation is investigated with angle-resolved photoemission…”
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Al-implantation induced damage in 4H-SiC by Kumar, P., Martins, M.I.M., Bathen, M.E., Prokscha, T., Grossner, U.

“…Ion implantation of 4H-SiC is one of the crucial steps in the fabrication of power devices. This process results in the generation of electrically active…”
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Investigation of electrically active defects in SiC power diodes caused by heavy ion irradiation by Fur, N., Belanche, M., Martinella, C., Kumar, P., Bathen, M. E., Grossner, U.

“…Deep level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS) are used to investigate electrically active defects in commercial…”
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Strain modulation of Si vacancy emission from SiC micro- and nanoparticles by Vásquez, G. C, Bathen, M. E, Galeckas, A, Bazioti, C, Johansen, K. M, Maestre, D, Cremades, A, Prytz, Ø, Moe, A. M, Kuznetsov, A. Yu, Vines, L

“…Single-photon emitting point defects in semiconductors have emerged as strong candidates for future quantum technology devices. In the present work, we exploit…”
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Exploring the border traps near the SiO2-SiC interface using conductance measurements by Kumar, P., Krummenacher, M., Medeiros, H. G., Race, S., Natzke, P., Kovacevic-Badstubner, I., Bathen, M.E., Grossner, U.

“…The high density of interface and border traps is responsible for the reduced mobility and threshold voltage instabilities in state-of-the-art SiC power…”
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Influence of Carbon Cap on Self-Diffusion in Silicon Carbide by Bathen, Marianne Etzelmüller, Linnarsson, Margareta, Ghezellou, Misagh, Ul Hassan, Jawad, Vines, Lasse

“…Self-diffusion of carbon (12C and 13C) and silicon (28Si and 30Si) in 4H silicon carbide has been investigated by utilizing a structure containing an isotope…”
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