New latchup mechanism in complementary bipolar power ICs triggered by backside die attach Glue
It is shown that in complementary bipolar power ICs latchup can be caused by a thyristor formed by the V-PNP power transistor at the frontside of the die and a Ag-filled glue die attach at the backside of the die (used to provide a good thermal contact between the die and the Cu-heatsink. The thyris...
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| Published in: | Microelectronics and reliability Vol. 39; no. 6; pp. 863 - 868 |
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| Main Authors: | , , |
| Format: | Journal Article |
| Language: | English |
| Published: |
Elsevier Ltd
1999
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| Online Access: | Get full text |
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| Summary: | It is shown that in complementary bipolar power ICs latchup can be caused by a thyristor formed by the V-PNP power transistor at the frontside of the die and a Ag-filled glue die attach at the backside of the die (used to provide a good thermal contact between the die and the Cu-heatsink. The thyristor is triggered by saturation of the V-PNP power transistors or by forward biasing the backside diode between Ag-filled glue and p-type silicon. The effect is strongly temperature dependent. It can be eliminated by either leaving the backside floating or by applying backside metallization. Consequences for latchup qualification testing are discussed. |
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| Bibliography: | SourceType-Scholarly Journals-2 ObjectType-Feature-2 ObjectType-Conference Paper-1 content type line 23 SourceType-Conference Papers & Proceedings-1 ObjectType-Article-3 |
| ISSN: | 0026-2714 1872-941X |
| DOI: | 10.1016/S0026-2714(99)00114-6 |