Search Results - "Basol, Bulent M"
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Effect of ultra-thin CdSexTe1−x interface layer on parameters of CdTe solar cells
Published in Solar energy (01-03-2022)“…•The effect of ultra-thin CdSexTe1-x layer on CdTe cell parameters was investigated.•Co-evaporation method was used to obtain ultra-thin CdSexTe1-x…”
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Photodetector properties of CdSe thin films grown by close space sublimation method
Published in Journal of materials science. Materials in electronics (01-09-2023)“…In the present study, CdSe thin films were grown by Close Space Sublimation (CSS) method on glass substrates at elevated temperatures. The prepared films were…”
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3
Investigation of growth temperature effects on SnSe-based photodetector performance
Published in Journal of materials science. Materials in electronics (01-09-2023)“…SnSe thin films were synthesized by thermal evaporation on glass slides at elevated growth temperatures. The grown films were investigated in terms of…”
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Study of Dopant Activation in Silicon Employing Differential Hall Effect Metrology (DHEM)
Published in IEEE journal of the Electron Devices Society (2022)“…Differential Hall Effect Metrology (DHEM) technique was used to characterize highly n-type doped Si epi layers deposited on p-type Si wafers. Total dopant…”
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Deposition of CdSeTe alloys using CdTe—CdSe mixed powder source material in a close-space sublimation process
Published in Journal of materials science. Materials in electronics (01-04-2021)“…CdSe x Te 1-x films were deposited using a close-space sublimation (CSS) method and CdSe + CdTe mixed powders as the source material. Composition of the source…”
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6
Improving device performance of sputtered CZTSe based solar cells by Manganese doping
Published in Optical materials (01-03-2024)“…Despite many efforts, Cu2ZnSnSe4 (CZTSe) based solar cells have remained relatively low efficiency compared to other thin film-based devices. One of the…”
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Enhancement of the response speed of CIGS-based photodetector by Te-doping
Published in Sensors and actuators. A. Physical. (16-10-2024)“…Cu(In,Ga)Se2 (CIGS) based devices are promising candidates for high performance photodetector applications. The present work investigated the effects of…”
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Improvement in performance of SnSe-based photodetectors via post deposition sulfur diffusion
Published in Sensors and actuators. A. Physical. (01-07-2024)“…The work represents an enhancement in the photodetector properties of thermally evaporated SnSe thin films through both annealing and sulfurization processes…”
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Improved CZTSe solar cell efficiency via silver and germanium alloying
Published in Solar energy (01-01-2024)Get full text
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10
Annealing effects on electrical property depth profiles of BF2 and P implanted polycrystalline Si determined by differential hall effect metrology
Published in Journal of materials science. Materials in electronics (01-07-2022)“…Differential Hall effect metrology (DHEM) was used to accurately and effectively evaluate the carrier concentration, mobility, and resistivity depth profiles…”
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Effect of CdS and CdSe pre-treatment on interdiffusion with CdTe in CdS/CdTe and CdSe/CdTe heterostructures
Published in Materials science in semiconductor processing (15-06-2021)“…High efficiency CdTe solar cell structure has the configuration of CdS/CdSe/CdTe. Depending on the deposition and post deposition techniques employed, this…”
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Nano-Scale Depth Profiles of Electrical Properties of Phosphorus Doped Silicon for Ultra-Shallow Junction Evaluation
Published in IEEE transactions on semiconductor manufacturing (01-08-2021)“…Electrical properties and microstructure of phosphorus (P) implanted p-type Si substrates were evaluated by four-point probe (4PP), Differential Hall Effect…”
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13
Study of Dopant Activation in Si Employing Differential Hall Effect Metrology (DHEM)
Published in 2021 20th International Workshop on Junction Technology (IWJT) (10-06-2021)“…In advanced node transistors the contact resistance dominates parasitic resistance and negatively impacts power consumption and speed. Therefore, there is…”
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Conference Proceeding -
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Differential Hall Effect Metrology for Electrical Characterization of Advanced Semiconductor Layers
Published in Metrology (02-10-2024)“…Semiconductor layers employed in fabricating advanced node devices are becoming thinner and their electrical properties are diverging from those established…”
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Characterization of copper layers grown by electrochemical mechanical deposition technique
Published in Thin solid films (01-05-2005)“…Electrochemical mechanical deposition (ECMD) is a new method that has the ability to deposit planar copper films on nonplanar substrate surfaces. The technique…”
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CuInSe2 films and solar cells obtained by selenization of evaporated Cu-In layers
Published in Applied physics letters (08-05-1989)“…CuInSe2 films of various stoichiometries have been prepared by the two-stage process. In this method, Cu-In layers were first evaporated onto Mo-coated glass…”
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Low cost techniques for the preparation of Cu(In,Ga)(Se,S) sub(2) absorber layers
Published in Thin solid films (01-01-2000)“…The group of chalcopyrite semiconductors in the Cu(In,Ga)(Se,S) sub(2) or CIGSS family synthesized by vacuum techniques have been successfully used in the…”
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Microsecond non-melt UV laser annealing for future 3D-stacked CMOS
Published 10-05-2022“…Three-dimensional (3D) CMOS technology encourages the use of UV laser annealing (UV-LA) because the shallow absorption of UV light into materials and the…”
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Preparation Techniques for Thin Film Solar Cell Materials: Processing Perspective
Published in Japanese Journal of Applied Physics (01-01-1993)“…I-III-VI 2 compound semiconductors are important photovoltaic (PV) materials with electrical and optical properties that can be tuned for optimum device…”
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Deposition of CuInSe2 films by a two-stage process utilizing E-beam evaporation
Published in IEEE transactions on electron devices (01-02-1990)“…The deposition technique involves first depositing Cu and In metallic layers onto a substrate using the electron-beam evaporation method and then selenizing…”
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