Search Results - "Barwin, J."
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A 16-Mb MRAM featuring bootstrapped write drivers
Published in IEEE journal of solid-state circuits (01-04-2005)“…A 16-Mb magnetic random access memory (MRAM) is demonstrated in 0.18-/spl mu/m three-Cu-level CMOS with a three-level MRAM process adder. The chip, the highest…”
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Journal Article Conference Proceeding -
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An SRAM Design in 65nm and 45nm Technology Nodes Featuring Read and Write-Assist Circuits to Expand Operating Voltage
Published in 2006 Symposium on VLSI Circuits, 2006. Digest of Technical Papers (2006)“…This paper describes a 32Mb SRAM that has been designed and fabricated in a 65nm low-power CMOS technology. The design has also been migrated to 45nm bulk and…”
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Conference Proceeding