Electronic structure and optoelectronic properties of strained InAsSb ∕ GaSb multiple quantum wells
A study of the optical properties of a set of InAs x Sb 1 − x ∕ Al 0.15 In 0.85 As 0.77 Sb 0.23 ∕ GaSb multiple quantum wells ( 0.82 < x < 0.92 ) with built-in strains in the − 0.62 % to + 0.05 % range is presented. The energy of the lowest quantum-confined optical transition is calculated by...
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| Published in: | Applied physics letters Vol. 87; no. 18; pp. 181911 - 181911-3 |
|---|---|
| Main Authors: | , , , , , , , |
| Format: | Journal Article |
| Language: | English |
| Published: |
American Institute of Physics
31-10-2005
|
| Online Access: | Get full text |
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| Summary: | A study of the optical properties of a set of
InAs
x
Sb
1
−
x
∕
Al
0.15
In
0.85
As
0.77
Sb
0.23
∕
GaSb
multiple quantum wells
(
0.82
<
x
<
0.92
)
with built-in strains in the
−
0.62
%
to
+
0.05
%
range is presented. The energy of the lowest quantum-confined optical transition is calculated by
k
∙
p
perturbation theory and experimentally determined by absorption measurements. Stokes shifts of photoluminescence, photocurrent, and of the emission from light-emitting devices against the absorption edge of the quantum well are quantified. The impact of the decreasing carrier confinement in the
InAs
x
Sb
1
−
x
quantum-well system with increasing mole fraction is analyzed theoretically, and experimentally demonstrated by photoluminescence measurements. Our results allow for the improvement of optoelectronic devices, in particular for tailoring emission spectra of light-emitting diodes. |
|---|---|
| ISSN: | 0003-6951 1077-3118 |
| DOI: | 10.1063/1.2125126 |