Search Results - "Barnes, Peter A."
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Calculations of tungsten silicide and carbide formation on SiC using the Gibbs free energy
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01-03-2000)“…Fabricating electronic devices capable of operation at elevated temperatures requires understanding the chemical reactions at the metal–semiconductor…”
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Calculations of cobalt silicide and carbide formation on SiC using the Gibbs free energy
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01-07-2000)“…An understanding of the chemical reactions at the metal–semiconductor interface is essential when designing electronic devices capable of operation at elevated…”
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Solutions to the Fermi-Dirac Integrals in Semiconductor Physics Using Polylogarithms
Published in Journal of computational electronics (01-10-2002)“…The value of polylogarithms for calculating Fermi-Dirac integrals has been recognized in the field of statistical physics. However, its value has not become…”
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A model to celebrate
Published in The OECD observer (01-10-2008)“…From the vantage point of a tax practitioner in 2008, it is easy to forget that period just a decade ago when e-commerce was going to revolutionize the…”
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Saturation of the junction voltage in stripe-geometry (AlGa)As double-heterostructure junction lasers
Published in Applied physics letters (15-06-1976)“…Saturation of the junction voltage has been observed to occur at the onset of lasing in cw stripe-geometry (AlGa)As double-heterostructure junction lasers…”
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LASER INDUCED UNDERWATER SPARKS
Published in Applied physics letters (15-10-1968)“…Measurements have been taken of the radiative flux density, the spectrum, and the temporal behavior of laser induced underwater sparks. When a 30-MW Q-switched…”
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A model to celebrate: in half a century the OECD Model Tax Convention has established itself as a model for international business. Here is how
Published in The OECD observer (01-10-2008)Get full text
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Germanium- and tellurium-doped GaAs for non-alloyed p -type and n -type ohmic contacts
Published in Applied physics letters (14-08-1995)“…Epitaxial ohmic contacts to GaAs were grown by liquid phase epitaxy. Heavily Ge-doped GaAs was grown to prepare ohmic contacts to p-GaAs while Te was used for…”
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Validation of the Exhaled Breath Temperature Measure
Published in Chest (01-04-2017)“…Background Exhaled breath temperature (EBT) is a new noninvasive method for the study of inflammatory respiratory diseases with a potential to reach clinical…”
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A Randomized Pragmatic Trial of Changing to and Stepping Down Fluticasone/Formoterol in Asthma
Published in The journal of allergy and clinical immunology in practice (Cambridge, MA) (01-09-2017)“…Background Guidelines recommend reducing treatment in patients with well-controlled asthma after 3 months of stability. However, there is inadequate real-life…”
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Session 3: controversy and dispute resolution - developments, trends and practical solutions
Published in Taxes (01-06-2009)“…This panel reviewed recent developments in the areas of managing international controversy and dispute resolution. They discussed doing business in emerging…”
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Low resistivity ohmic contacts to moderately doped n‐GaAs with low‐temperature processing
Published in Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films (01-05-1995)“…A low‐temperature process for forming ohmic contacts to moderately doped GaAs has been optimized using a PdGe metallization scheme. Minimum specific contact…”
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Derivative measurements of the current-voltage characteristics of double-heterostructure injection lasers
Published in IEEE journal of quantum electronics (01-10-1976)“…Measurements of the electrical characteristics of double-heterostructure (DH) stripe-geometry AlGaAs junction lasers are reported. We show that the electrical…”
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Future therapies for chronic obstructive pulmonary disease
Published in Zhong hua yi xue za zhi (07-11-2006)Get more information
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