Search Results - "Barnes, Peter A."

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  1. 1

    Calculations of tungsten silicide and carbide formation on SiC using the Gibbs free energy by Seng, William F., Barnes, Peter A.

    “…Fabricating electronic devices capable of operation at elevated temperatures requires understanding the chemical reactions at the metal–semiconductor…”
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    Journal Article
  2. 2

    Calculations of cobalt silicide and carbide formation on SiC using the Gibbs free energy by Seng, William F, Barnes, Peter A

    “…An understanding of the chemical reactions at the metal–semiconductor interface is essential when designing electronic devices capable of operation at elevated…”
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    Journal Article
  3. 3

    Solutions to the Fermi-Dirac Integrals in Semiconductor Physics Using Polylogarithms by Ulrich, Marc D, Seng, William F, Barnes, Peter A

    Published in Journal of computational electronics (01-10-2002)
    “…The value of polylogarithms for calculating Fermi-Dirac integrals has been recognized in the field of statistical physics. However, its value has not become…”
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    Journal Article
  4. 4

    A model to celebrate by Barnes, Peter A

    Published in The OECD observer (01-10-2008)
    “…From the vantage point of a tax practitioner in 2008, it is easy to forget that period just a decade ago when e-commerce was going to revolutionize the…”
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    Journal Article
  5. 5

    Saturation of the junction voltage in stripe-geometry (AlGa)As double-heterostructure junction lasers by Paoli, Thomas L., Barnes, Peter A.

    Published in Applied physics letters (15-06-1976)
    “…Saturation of the junction voltage has been observed to occur at the onset of lasing in cw stripe-geometry (AlGa)As double-heterostructure junction lasers…”
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    Journal Article
  6. 6

    LASER INDUCED UNDERWATER SPARKS by Barnes, Peter A., Rieckhoff, K. E.

    Published in Applied physics letters (15-10-1968)
    “…Measurements have been taken of the radiative flux density, the spectrum, and the temporal behavior of laser induced underwater sparks. When a 30-MW Q-switched…”
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    Journal Article
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    Germanium- and tellurium-doped GaAs for non-alloyed p -type and n -type ohmic contacts by Park, Joongseo, Barnes, Peter A., Lovejoy, Michael L.

    Published in Applied physics letters (14-08-1995)
    “…Epitaxial ohmic contacts to GaAs were grown by liquid phase epitaxy. Heavily Ge-doped GaAs was grown to prepare ohmic contacts to p-GaAs while Te was used for…”
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    Journal Article
  9. 9

    Validation of the Exhaled Breath Temperature Measure by Carpagnano, Giovanna E., MD, PhD, Foschino-Barbaro, Maria P., MD, Crocetta, Corrado, MD, Lacedonia, Donato, MD, PhD, Saliani, Valerio, MD, Zoppo, Luigi Davide, MD, Barnes, Peter J., MA, DM, DSc

    Published in Chest (01-04-2017)
    “…Background Exhaled breath temperature (EBT) is a new noninvasive method for the study of inflammatory respiratory diseases with a potential to reach clinical…”
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    Journal Article
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    Session 3: controversy and dispute resolution - developments, trends and practical solutions by Barnes, Peter A, Bernard, Michael J, Dunahoo, Carol A, Swenson, David, Hicks, Hal

    Published in Taxes (01-06-2009)
    “…This panel reviewed recent developments in the areas of managing international controversy and dispute resolution. They discussed doing business in emerging…”
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    Journal Article Trade Publication Article
  12. 12

    Low resistivity ohmic contacts to moderately doped n‐GaAs with low‐temperature processing by Lovejoy, Michael L., Howard, Arnold J., Zavadil, Kevin R., Rieger, Dennis J., Shul, Randy J., Barnes, Peter A.

    “…A low‐temperature process for forming ohmic contacts to moderately doped GaAs has been optimized using a PdGe metallization scheme. Minimum specific contact…”
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    Conference Proceeding Journal Article
  13. 13

    Derivative measurements of the current-voltage characteristics of double-heterostructure injection lasers by Barnes, P., Paoli, T.

    Published in IEEE journal of quantum electronics (01-10-1976)
    “…Measurements of the electrical characteristics of double-heterostructure (DH) stripe-geometry AlGaAs junction lasers are reported. We show that the electrical…”
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    Journal Article
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