Search Results - "Barkov, K. A."
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On the Growth of Thin-Film AlGaN/GaN Epitaxial Heterostructures on Hybrid Substrates Containing Layers of Silicon Carbide and Porous Silicon
Published in Semiconductors (Woodbury, N.Y.) (01-04-2022)“…—In our work, we carry out a structural-spectroscopic study of AlGaN/GaN epitaxial layers grown by molecular-beam epitaxy with nitrogen-plasma activation on a…”
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Effect of Pretreatment of the Silicon Substrate on the Properties of GaN Films Grown by Chloride–Hydride Vapor-Phase Epitaxy
Published in Semiconductors (Woodbury, N.Y.) (01-12-2021)“…The growth of GaN films on preliminarily treated Si(001) substrates by chloride–hydride vapor-phase epitaxy through a buffer layer is reported. It is…”
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Influence of Etching Modes on the Morphology and Composition of the Surface of Multilayer Porous Silicon
Published in Semiconductors (Woodbury, N.Y.) (01-02-2024)“…Based on X-ray reflectometry and ultrasoft X-ray spectroscopy data, the opportunity of controlling surface porosity using multi-stage electrochemical etching…”
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Investigation of the Relationship Between the Composition and Photoluminescence Properties of Porous Silicon and Its Porosity
Published in Surface investigation, x-ray, synchrotron and neutron techniques (01-02-2024)“…— Porous silicon (por-Si) is a complex multiphase material, the composition and functional properties of which greatly depend on the features of its formation…”
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Characterization of Functional Nanofilms on InP by Ultrasoft X-ray Emission and Infrared Spectroscopies
Published in Inorganic materials (01-12-2021)“…— The thermal oxidation of InP in the presence of both a MnO 2 chemical stimulator layer produced on its surface by magnetron sputtering and a Mn 3 (PO 4 ) 2…”
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On the Phase Composition, Morphology, and Optical and Electronic Characteristics of AlN Nanofilms Grown on Misoriented GaAs(100) Substrates
Published in Semiconductors (Woodbury, N.Y.) (01-11-2019)“…Thin AlN nanofilms are produced by reactive ion-plasma deposition onto GaAs(100) substrates misoriented with respect to the 〈100〉 direction to different…”
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The features of CoFeZr alloy nanocrystals formation in film composites of (CoFeZr)x(MgF2)100-x
Published in Journal of alloys and compounds (25-07-2021)“…•Nanocomposites of variable composition (CoFeZr)x(MgF2)100‐x by XRD, XPS, and IR-spectroscopy methods were investigated.•The formation of CoFeZr nanocrystals…”
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Electronic structure and phase composition of dielectric interlayers in multilayer amorphous nanostructure [(CoFeB)60C40/SiO2]200
Published in Physics of the solid state (2017)“…The multilayer amorphous nanostructure [(CoFeB) 60 C 40 /SiO 2 ] 200 of alternating composite and dielectric layers was obtained by ion-beam sputtering on a…”
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Effect of GaAs(100) substrate misorientation on structural, electronic, and optical properties of AlN nano-sized films obtained by reactive plasma-ion deposition
Published in Physica. B, Condensed matter (15-06-2019)“…With the use of reactive plasma-ion deposition, thin nano-sized films of AlN were obtained on the substrates of GaAs(100) with a different degree of…”
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Formation of the Al3Si metastable phase in Al-Si films obtained by ion-beam sputtering according to experimental and theoretical data
Published in Thin solid films (01-05-2023)“…•Al1-xSix films obtained by ion beam sputtering of an Al-Si composite target.•Formation of an ordered Al3Si phase with a Cu3Au (Pm3m) type structure…”
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Rearrangement of the optical properties of a-SiOx: H films after crystallization of silicon nanoclusters
Published in Journal of non-crystalline solids (01-11-2021)“…The results of investigations on crystallization of silicon nanoclusters in a-SiOx matrix have shown that, even at the very fast annealing using pulse photonic…”
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Electronic structure and phase composition of dielectric interlayers in multilayer amorphous nanostructure
Published in Physics of the solid state (01-01-2017)“…The multilayer amorphous nanostructure [[[(CoFeB).sub.60][C.sub.40]/Si[O.sub.2]].sub.200] of alternating composite and dielectric layers was obtained by…”
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Phase Formation and Electronic Structure Peculiarities in the Al{sub 1–} {sub x}Si{sub x} Film Composites under the Conditions of Magnetron and Ion-Beam Sputtering
Published in Physics of the solid state (15-05-2018)“…The peculiarities of the phase composition and electronic structure of aluminum–silicon composite films near the Al{sub 0.75}Si{sub 0.25} composition obtained…”
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Phase Formation and Electronic Structure Peculiarities in the Al1 – xSix Film Composites under the Conditions of Magnetron and Ion-Beam Sputtering
Published in Physics of the solid state (01-05-2018)“…The peculiarities of the phase composition and electronic structure of aluminum–silicon composite films near the Al 0.75 Si 0.25 composition obtained by the…”
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Phase Formation and Electronic Structure Peculiarities in the Al1 – x Si x Film Composites under the Conditions of Magnetron and Ion-Beam Sputtering
Published in Physics of the solid state (01-01-2018)“…The peculiarities of the phase composition and electronic structure of aluminum–silicon composite films near the Al0.75Si0.25 composition obtained by the…”
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Influence of a Weak Pulsed Electromagnetic Field on the Atomic Structure of Natural Aluminosilicates Clinoptilolite, Montmorillonite and Palygorskit
Published in Kondensirovannye sredy i mežfaznye granicy (25-03-2020)“…Natural and artifi cial aluminosilicates are relevant research objects due to their wide using in medicine, food and chemical industries, and in agriculture…”
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О ВОЗМОЖНОСТИ ФОРМИРОВАНИЯ МЕТАСТАБИЛЬНОЙ ФАЗЫ Al3Si В КОМПОЗИТНЫХ ПЛЕНКАХ Al-Si, ПОЛУЧЕННЫХ ИОННО-ЛУЧЕВЫМ И МАГНЕТРОННЫМ НАПЫЛЕНИЕМ
Published in Kondensirovannye sredy i mežfaznye granicy (19-03-2018)“…Исследованы фазовый состав и электронное строение композитных пленок Al-Si вблизи состава Al0.75Si0.25 на подложке Si(100), полученных магнетронным и…”
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