Search Results - "Bardwell, J. A."

Properties of carbon-doped GaN by Tang, H., Webb, J. B., Bardwell, J. A., Raymond, S., Salzman, Joseph, Uzan-Saguy, C.

“…The properties of carbon-doped GaN epilayers grown by molecular-beam epitaxy have been studied by temperature-dependent resistivity, Hall-effect measurements,…”
Get full text

Role of buried cracks in mitigating strain in crack free GaN grown on Si (111) employing AlN interlayer schemes by Tang, H., Baribeau, J.-M., Aers, G.C., Fraser, J., Rolfe, S., Bardwell, J.A.

“…This paper investigates the effect of buried cracks in the AlN interlayer buffer on mitigation of the large, tensile, thermal expansion mismatch strain in the…”
Get full text

Selectively grown AlGaN/GaN HEMTs on Si(1 1 1) substrates for integration with silicon microelectronics by Haffouz, S., Semond, F., Bardwell, J.A., Lester, T., Tang, H.

“…The possibility of fabricating AlGaN/GaN high electron mobility transistors from selectively grown mesas as an approach towards the integration of nitrides…”
Get full text

Semi-insulating C-doped GaN and high-mobility AlGaN/GaN heterostructures grown by ammonia molecular beam epitaxy by Webb, J. B., Tang, H., Rolfe, S., Bardwell, J. A.

“…A method of growing semi-insulating GaN epilayers by ammonia molecular beam epitaxy through intentional doping with carbon is reported. Thick GaN layers of…”
Get full text

Mechanisms of ammonia—MBE growth of GaN on SiC for transport devices by Tang, H., Rolfe, S., Semond, F., Bardwell, J.A., Baribeau, J.M.

“…The effect of growth parameters on impurity incorporation, surface morphology, crystal quality, and the strain state has been studied for ammonia molecular…”
Get full text

Si (111) substrates as highly effective pseudomasks for selective growth of GaN material and devices by ammonia-molecular-beam epitaxy by Tang, H., Haffouz, S., Bardwell, J. A.

“…The unique property of Si (111) as effective pseudomask substrate for selective growth of GaN by ammonia-molecular-beam epitaxy is reported. The critical…”
Get full text

Sampling depth of total electron and fluorescence measurements in Si L- and K-edge absorption spectroscopy by Kasrai, M., Lennard, W.N., Brunner, R.W., Bancroft, G.M., Bardwell, J.A., Tan, K.H.

“…High resolution Si L-edge and K-edge X-ray absorption near edge structure (XANES) spectra for SiO 2 on Si substrates have been recorded using total electron…”
Get full text

Specific cleavage of model recombination and repair intermediates by the yeast Rad1-Rad10 DNA endonuclease by Bardwell, A.J, Bardwell, L, Tomkinson, A.E, Friedberg, E.C

“…The RAD1 and RAD10 genes of Saccharomyces cerevisiae are required for both nucleotide excision repair and certain mitotic recombination events. Here, model…”
Get full text

AlGaN/GaN field effect transistors with C-doped GaN buffer layer as an electrical isolation template grown by molecular beam epitaxy by Haffouz, S., Tang, H., Bardwell, J.A., Hsu, E.M., Webb, J.B., Rolfe, S.

“…The effectiveness of Ammonia Molecular Beam Epitaxy (MBE) grown carbon-doped GaN buffer layer as an electrical isolation template was investigated. AlGaN/GaN…”
Get full text

GaN nanostructures and HFET structures selectively grown on silicon substrates by ammonia-MBE by Tang, H., Bardwell, J.A., Lapointe, J., Raymond, S., Fraser, J., Haffouz, S., Rolfe, S.

“…Silicon substrate can be used as a highly effective pseudomask to perform selective growth of GaN by ammonia molecular beam epitaxy (MBE). This can be…”
Get full text

A simple wet etch for GaN by BARDWELL, J. A, FOULDS, I. G, WEBB, J. B, TANG, H, FRASER, J, MOISA, S, ROLFE, S. J

“…A simple UV photo-enhanced wet etch has been developed for GaN. Unlike photoelectrochemical wet etching, this technique does not require an electrical contact…”
Get full text

Effect of template morphology on the efficiency of InGaN ∕ GaN quantum wells and light-emitting diodes grown by molecular-beam epitaxy by Tang, H., Haffouz, S., Powell, A., Bardwell, J. A., Webb, J.

“…The pronounced enhancement of indium incorporation efficiency for InGaN ∕ GaN quantum wells due to the rough, faceted surface of the GaN template grown in situ…”
Get full text

Yeast DNA repair and recombination proteins Rad1 and Rad10 constitute a single-stranded-DNA endonuclease by Tomkinson, A.E, Bardwell, A.J, Bardwell, L, Tappe, N.J, Friedberg, E.C

“…Damage-specific recognition and incision of DNA during nucleotide excision repair in yeast and mammalian cells requires multiple gene products. Amino-acid…”
Get full text

High-performance GaN/InGaN heterostructure FETs on Mg-doped GaN current blocking layers by Kuan, T.M., Chang, S.J., Su, Y.K., Lin, J.C., Wei, S.C., Wang, C.K., Huang, C.I., Lan, W.H., Bardwell, J.A., Tang, H., Lin, W.J., Cherng, Y.T.

“…Nitride-based GaN/In 0.12Ga 0.88N heterostructure field effect transistors (HFETs) with semi-insulating Mg-doped GaN current blocking layers were successfully…”
Get full text

Self-heating and the temperature dependence of the dc characteristics of GaN heterostructure field effect transistors by McAlister, S. P., Bardwell, J. A., Haffouz, S., Tang, H.

“…Self-heating is an important issue for GaN heterostructure field effect transistors (HFETs), especially in high power applications. Here we report the…”
Get full text

Yeast nucleotide excision repair proteins Rad2 and Rad4 interact with RNA polymerase II basal transcription factor b (TFIIH) by BARDWELL, A. J, BARDWELL, L, IYER, N, SVEJSTRUP, J. Q, FEAVER, W. J, KORNBERG, R, FRIEDBERG, E. C

“…Article Usage Stats Services MCB Citing Articles Google Scholar PubMed Related Content Social Bookmarking CiteULike Delicious Digg Facebook Google+ Mendeley…”
Get full text

Defect reduction in GaN epilayers and HFET structures grown on (0 0 0 1)sapphire by ammonia MBE by Webb, James B., Tang, H., Bardwell, J.A., Moisa, S., Peters, C., MacElwee, T.

“…The quality of GaN epilayers grown by molecular beam epitaxy on substrates such as sapphire and silicon carbide has improved considerably over the past few…”
Get full text

Specificity of MAP Kinase Signaling in Yeast Differentiation Involves Transient versus Sustained MAPK Activation by Sabbagh, Walid, Flatauer, Laura J, Bardwell, A.Jane, Bardwell, Lee

“…Signals transmitted by common components often elicit distinct (yet appropriate) outcomes. In yeast, two developmental options—mating and invasive growth—are…”
Get full text

Structure characterization of AlN buffer layers grown on (0 0 0 1) sapphire by magnetron sputter epitaxy by Tang, H, Webb, J.B, Moisa, S, Bardwell, J.A, Rolfe, S

“…AlN layers grown by magnetron sputter epitaxy (MSE) are effective buffer layers for the growth of high quality GaN materials and devices. The structural and…”
Get full text

Growth of crack-free, carbon-doped GaN and AlGaN∕GaN high electron mobility transistor structures on Si (111) substrates by ammonia molecular beam epitaxy by Haffouz, S., Tang, H., Rolfe, S., Bardwell, J. A.

“…The growth of C-doped GaN epilayers on p-Si (111) substrates by ammonia molecular beam epitaxy is reported. Highly insulating and crack-free 1.5-μm-thick…”
Get full text