Search Results - "Barchuk, I.P."

Research of high-temperature instability processes in buried dielectric of full depleted SOI MOSFET's by Nazarov, A.N., Colinge, J.-P., Barchuk, I.P.

“…In this work the processes of thermal-bias charge instability in the buried oxide of SIMOX SOI full depleted inversion mode (IM) n-MOSFET's and accumulation…”
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Thermally activated processes in the buried oxide of SIMOX SOI structures and devices by Lysenko, V.S, Nazarov, A.N, Kilchytska, V.I, Osiyuk, I.N, Tyagulski, I.P, Gomeniuk, Yu.V, Barchuk, I.P

“…This paper is devoted to the analysis of the electrical processes in SOI SIMOX structures in a wide temperature range (from 4 to 700 K) by a combination of…”
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Electrical properties and radiation hardness of SOI systems with multilayer buried dielectric by Barchuk, I.P., Kilchitskaya, V.I., Lysenko, V.S., Nazarov, A.N., Rudenko, T.E., Djurenko, S.V., Rudenko, A.N., Yurchenko, A.P., Ballutaud, D.B., Colinge, J.-P.

“…In this work SOI structures with buried SiO/sub 2/-Si/sub 3/N/sub 4/-SiO/sub 2/ layers have been fabricated by the ZMR-technique with the aim of improving the…”
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Association of high-temperature kink-effect in SIMOX SOI fully depleted n-MOSFET with bias temperature instability of buried oxide by Nazarov, A.N., Barchuk, I.P., Lysenko, V.S., Colinge, J.-P.

“…A high-temperature drain current “jump” in fully depleted SOI n-channel MOSFET is reported for the first time. The phenomenon appears in the SIMOX SOI MOSFETs…”
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The nature of high-temperature instability in fully depleted SOI IM n-MOSFETs by Nazarov, A.N., Barchuk, I.P., Colinge, J.-P.

“…A high-temperature drain current "jump" in fully depleted SOI n-channel MOSFET is reported for the first time. The phenomenon appears in SIMOX SOI MOSFETs at…”
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