Search Results - "Barbosa, Marcelo B"
-
1
Author Correction: Contactless doping characterization of Ga2O3 using acceptor Cd probes
Published in Scientific reports (20-03-2024)Get full text
Journal Article -
2
Contactless doping characterization of Ga2O3 using acceptor Cd probes
Published in Scientific reports (26-08-2022)“…Finding suitable p-type dopants, as well as reliable doping and characterization methods for the emerging wide bandgap semiconductor β - Ga 2 O 3 could…”
Get full text
Journal Article -
3
Contactless doping characterization of $${\mathrm{Ga}_{2}\mathrm{O}_{3}}$$ using acceptor Cd probes
Published in Scientific reports (26-08-2022)“…Abstract Finding suitable p-type dopants, as well as reliable doping and characterization methods for the emerging wide bandgap semiconductor $$\beta$$ β -…”
Get full text
Journal Article -
4
In‐Plane Field‐Driven Excitonic Electro‐Optic Modulation in Monolayer Semiconductor
Published in Advanced optical materials (01-02-2022)“…2D semiconductors are attractive candidates for on‐chip electro‐optic modulators due to their ease of integration and rich exciton‐mediated phenomena. While…”
Get full text
Journal Article -
5
On the nature of the (de)coupling of the magnetostructural transition in Er5Si4
Published in physica status solidi (b) (01-10-2017)“…In this report, a successful thermodynamical model was employed to understand the structural transition in Er5Si4, able to explain the decoupling of the…”
Get full text
Journal Article -
6
Perturbed Angular Correlation Study of the Static and Dynamic Aspects of Cadmium and Mercury Atoms Inside and Attached to a C60 Fullerene Cage
Published in Zeitschrift für Naturforschung. A, A journal of physical sciences (2014)“…30 keV Cd and 50 keV Hg beams from ISOLDE were used to implant on preformed targets of C with a thickness of 1 mg cm . Endofullerene compounds, viz. Cd@C and…”
Get full text
Journal Article -
7
Contactless doping characterization of Formula: see text using acceptor Cd probes
Published in Scientific reports (26-08-2022)“…Finding suitable p-type dopants, as well as reliable doping and characterization methods for the emerging wide bandgap semiconductor [Formula: see…”
Get full text
Journal Article -
8
Author Correction: Contactless doping characterization of Ga 2 O 3 using acceptor Cd probes
Published in Scientific reports (20-03-2024)Get full text
Journal Article -
9
Contactless doping characterization of [Formula: see text] using acceptor Cd probes
Published in Scientific reports (26-08-2022)“…Finding suitable p-type dopants, as well as reliable doping and characterization methods for the emerging wide bandgap semiconductor [Formula: see…”
Get full text
Journal Article -
10
Contactless doping characterization of \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${\mathrm{Ga}_{2}\mathrm{O}_{3}}$$\end{document}Ga2O3 using acceptor Cd probes
Published in Scientific reports (26-08-2022)“…Finding suitable p-type dopants, as well as reliable doping and characterization methods for the emerging wide bandgap semiconductor…”
Get full text
Journal Article -
11
Contactless doping characterization of $${\ rm{O}_{3}}$$ Ga 2 O 3 using acceptor Cd probes
Published in Scientific reports (01-08-2022)“…Abstract Finding suitable p-type dopants, as well as reliable doping and characterization methods for the emerging wide bandgap semiconductor $$\beta$$ β -…”
Get full text
Journal Article -
12
-
13
Perturbed Angular Correlation Study of the Static and Dynamic Aspects of Cadmium and Mercury Atoms Inside and Attached to a C 60 Fullerene Cage
Published in Zeitschrift für Naturforschung. A, A journal of physical sciences (01-11-2014)“…Abstract 30 keV 111m Cd and 50 keV 199m Hg beams from ISOLDE were used to implant on preformed targets of C 60 with a thickness of 1 mg cm -2 . Endofullerene…”
Get full text
Journal Article -
14
On the nature of the (de)coupling of the magnetostructural transition in Er$_5$Si$_4
Published 31-03-2017“…In this report, a successful thermodynamical model was employed to understand the structural transition in Er$_5$Si$_4$, able to explain the decoupling of the…”
Get full text
Journal Article