Search Results - "Barbosa, Marcelo B"

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    Contactless doping characterization of Ga2O3 using acceptor Cd probes by Barbosa, Marcelo B., Correia, João Guilherme, Lorenz, Katharina, Lopes, Armandina M. L., Oliveira, Gonçalo N. P., Fenta, Abel S., Schell, Juliana, Teixeira, Ricardo, Nogales, Emilio, Méndez, Bianchi, Stroppa, Alessandro, Araújo, João Pedro

    Published in Scientific reports (26-08-2022)
    “…Finding suitable p-type dopants, as well as reliable doping and characterization methods for the emerging wide bandgap semiconductor β - Ga 2 O 3 could…”
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    Journal Article
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    In‐Plane Field‐Driven Excitonic Electro‐Optic Modulation in Monolayer Semiconductor by Vella, Daniele, Barbosa, Marcelo B., Trevisanutto, Paolo E., Verzhbitskiy, Ivan, Zhou, Justin Yong, Watanabe, Kenji, Taniguchi, Takashi, Kajikawa, Kotaro, Eda, Goki

    Published in Advanced optical materials (01-02-2022)
    “…2D semiconductors are attractive candidates for on‐chip electro‐optic modulators due to their ease of integration and rich exciton‐mediated phenomena. While…”
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    Journal Article
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    On the nature of the (de)coupling of the magnetostructural transition in Er5Si4 by Costa, Rui M., Belo, João H., Barbosa, Marcelo B., Algarabel, Pedro A., Magén, César, Morellón, Luis, Ibarra, Manuel R., Gonçalves, João N., Fortunato, Nuno M., Amaral, João S., Araújo, João P., Pereira, André M.

    Published in physica status solidi (b) (01-10-2017)
    “…In this report, a successful thermodynamical model was employed to understand the structural transition in Er5Si4, able to explain the decoupling of the…”
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    Journal Article
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    Contactless doping characterization of Formula: see text using acceptor Cd probes by Barbosa, Marcelo B, Correia, João Guilherme, Lorenz, Katharina, Lopes, Armandina M L, Oliveira, Gonçalo N P, Fenta, Abel S, Schell, Juliana, Teixeira, Ricardo, Nogales, Emilio, Méndez, Bianchi, Stroppa, Alessandro, Araújo, João Pedro

    Published in Scientific reports (26-08-2022)
    “…Finding suitable p-type dopants, as well as reliable doping and characterization methods for the emerging wide bandgap semiconductor [Formula: see…”
    Get full text
    Journal Article
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    Contactless doping characterization of [Formula: see text] using acceptor Cd probes by Barbosa, Marcelo B, Correia, João Guilherme, Lorenz, Katharina, Lopes, Armandina M L, Oliveira, Gonçalo N P, Fenta, Abel S, Schell, Juliana, Teixeira, Ricardo, Nogales, Emilio, Méndez, Bianchi, Stroppa, Alessandro, Araújo, João Pedro

    Published in Scientific reports (26-08-2022)
    “…Finding suitable p-type dopants, as well as reliable doping and characterization methods for the emerging wide bandgap semiconductor [Formula: see…”
    Get full text
    Journal Article
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    Contactless doping characterization of $${\ rm{O}_{3}}$$ Ga 2 O 3 using acceptor Cd probes by Marcelo B. Barbosa, João Guilherme Correia, Katharina Lorenz, Armandina M. L. Lopes, Gonçalo N. P. Oliveira, Abel S. Fenta, Juliana Schell, Ricardo Teixeira, Emilio Nogales, Bianchi Méndez, Alessandro Stroppa, João Pedro Araújo

    Published in Scientific reports (01-08-2022)
    “…Abstract Finding suitable p-type dopants, as well as reliable doping and characterization methods for the emerging wide bandgap semiconductor $$\beta$$ β -…”
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    Journal Article
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    On the nature of the (de)coupling of the magnetostructural transition in Er$_5$Si$_4 by Costa, Rui M, Belo, João H, Barbosa, Marcelo B, Algarabel, Pedro A, Magén, César, Morellon, Luis, Ibarra, Manuel R, Gonçalves, João N, Fortunato, Nuno M, Amaral, João S, Araújo, João P, Pereira, André M

    Published 31-03-2017
    “…In this report, a successful thermodynamical model was employed to understand the structural transition in Er$_5$Si$_4$, able to explain the decoupling of the…”
    Get full text
    Journal Article