Search Results - "Barataud, Denis"

Single and dual input packaged 5.5-6.5GHz, 20W, Quasi-MMIC GaN-HEMT Doherty Power Amplifier by Ayad, Mohammed, Byk, Estelle, Neveux, Guillaume, Camiade, Marc, Barataud, Denis

“…This paper presents the design, the realization and the power characteristics of plastic low cost packaged symmetric Doherty Power Amplifiers (DPA) operating…”
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X-Band Sampling Technology Demonstration by Stephane, Halte, Cedric, Chambon, Stephen, Rawson, Abhijeet, Dasgupta, Guillaume, Neveux, Denis, Barataud

“…The technical objective of this project is to simplify the Ground Station architecture currently used by European Space Agency in Deep Space Antenna by…”
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Measured and Simulated Impact of Irregular Radar Pulse Trains on the Pulse-to-Pulse Stability of Microwave Power Amplifiers by Delprato, Julien, Barataud, Denis, Campovecchio, Michel, Neveux, Guillaume, Tolant, Clement, Eudeline, Philippe

“…This paper investigates the impact of irregular pulsed RF signals on the pulse-to-pulse (P2P) stability of a microwave power GaN HEMT amplifier. This study is…”
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An Envelope Tracking oriented, 17-20GHz, Average 64QAM Modulated 2W, PAE>37%, OBO 8dB GaN MMIC Power Amplifier by Rifi, Aziz, Hallepee, Clement, Ayad, Mohammed, Neveux, Guillaume, Barataud, Denis

“…This article presents the design and the realization of a 4W reactively-matched Power Amplifier (PA), in GaN MMIC technology operating in the 17-20 GHz band…”
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On-Wafer Single-Pulse Thermal Load-Pull RF Characterization of Trapping Phenomena in AlGaN/GaN HEMTs by Benvegnu, Agostino, Laurent, Sylvain, Meneghini, Matteo, Barataud, Denis, Meneghesso, Gaudenzio, Zanoni, Enrico, Quere, Raymond

“…In this paper, a new characterization method, which allows the determination of the time constants of traps in AlGaN/GaN high electron-mobility transistors is…”
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Characterization of Defects in AlGaN/GaN HEMTs Based on Nonlinear Microwave Current Transient Spectroscopy by Benvegnu, Agostino, Laurent, Sylvain, Jardel, Olivier, Muraro, Jean-Luc, Meneghini, Matteo, Barataud, Denis, Meneghesso, Gaudenzio, Zanoni, Enrico, Quere, Raymond

“…This paper presents a new nonlinear microwave-based characterization methodology for the study of the deep levels proprieties in gallium nitride (GaN)-based…”
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Ultra-Fast (13ns) Low Frequency/Microwave Transient Measurements, Application to GaN Transistors Characterization of Pulse to Pulse Stability by Ben-Sassi, M., Neveux, G., Barataud, D.

“…This paper describes an on-wafer fully calibrated characterization system of GaN power transistors for the simultaneous and coherent extraction of, on the one…”
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Continuous time-domain RF waveforms monitoring under overdrive stress condition of AlGaN/GaN HEMTs by Benvegnù, A., Laurent, S., Meneghini, M., Quéré, R., Roux, J.-L., Zanoni, E., Barataud, D.

“…This paper reports an advanced time-domain methodology to investigate the device reliability and determine its safe operating area of AlGaN/GaN HEMTs. The…”
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Non-linear electro-thermal AlGaN/GaN model including large-signal dynamic thermal-trapping effects by Benvegnu, Agostino, Jardel, Olivier, Laurent, Sylvain, Barataud, Denis, Meneghini, Matteo, Zanoni, Enrico, Quere, Raymond

“…This paper presents a non-linear electro-thermal AlGaN/GaN model for CAD application with a new additive thermal-trap model to take into account the dynamic…”
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On-wafer time-domain measurement of pulse-to-pulse stability for microwave power GaN HEMT by Fakhfakh, S., Ayari, L., Martin, A., Campovecchio, M., Neveux, G., Barataud, D.

“…For the first time, on-wafer time-domain envelope measurements of pulse-to-pulse (P2P) stability are reported in this paper. In the case of a radar burst,…”
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Wideband 50W packaged GaN HEMT with over 60% PAE through internal harmonic control in S-band by Cheron, Jerome, Campovecchio, Michel, Barataud, Denis, Reveyrand, Tibault, Stanislawiak, Michel, Eudeline, Philippe, Floriot, Didier

“…This paper presents an internally-matched packaged GaN HEMT for achieving not only high-efficiency and high-power performances but also wide bandwidth and…”
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Time-domain envelope measurements and simulations of pulse-to-pulse stability in microwave power amplifiers by Delprato, Julien, Barataud, Denis, Campovecchio, Michel, Neveux, Guillaume, Tolant, Clement, Eudeline, Philippe

“…This paper presents a new measurement system based on heterodyne receiver to characterize the impact of irregular pulsed signals on the pulse-to-pulse (P2P)…”
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LABENVI, un dispositif pour les travaux pratiques à distance : Présentation et analyse des nouveaux usages by Philippe Leproux, Denis Barataud, Serge Bailly, Raphaël Nieto

“…Le projet LABENVI (laboratoire d’enseignement virtuel) de l’Université de Limoges offre aux apprenants éloignés la possibilité d’effectuer des travaux…”
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Broadband Time-Domain Measurement System for the Characterization of Nonlinear Microwave Devices With Memory by Abouchahine, Mouhamad, Saleh, Alaa, Neveux, Guillaume, Reveyrand, Tibault, Teyssier, Jean-Pierre, Rousset, Danielle, Barataud, Denis, Nebus, Jean-Michel

“…This paper describes a novel fully calibrated four channel broadband time-domain measurement system for the characterization of nonlinear microwave devices…”
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Trap characterization of AlGaN/GaN HEMTs through drain current measurements under pulsed-RF large-signal excitation by Benvegnu, Agostino, Laurent, Sylvain, Meneghini, Matteo, Meneghesso, Gaudenzio, Muraro, Jean-Luc, Barataud, Denis, Zanoni, Enrico, Quere, Raymond

“…An advanced microwave characterization technique has been developed to determine the trapping and detrapping time constants due to wide Pulsed-RF large-signal…”
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Compact Design of a L-Band 40W 40MHz Envelope Tracking GaN Power Amplifier for Small Cells by Nonet, Olivier, Demenitroux, Wilfried, Ploneis, Frederic, Barataud, Denis, Campovecchio, Michel

“…Envelope Tracking (ET) greatly enhances the efficiency of High Power Amplifiers (HPA) driven by modulated signals associated with high Peak-to-Average Power…”
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High Current - High Speed Dynamic Bias Control System Applied to a 100W Wideband Push-Pull Amplifier by Bacqué, Ludovic, Bouysse, Philippe, Rebernak, W., Poumier, C., Lapierre, L., Nanfack Nkondem, Grégoire, Neveux, Guillaume, Barataud, Denis, Quéré, Raymond

“…This paper presents a dynamic bias control system applied to a high power wideband amplifier. The amplifier used is based on a push-pull topology with LDMOS…”
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Note on the Determination of the Offset Lines in Doherty Power Amplifiers by Neveux, Guillaume, Rifi, Mohamed Aziz, Barataud, Denis, Ayad, Mohammed, Richard, Elodie

“…This letter shows how to find by inspection, the values of the characteristic impedances and the electrical lengths of the offset lines of the main and…”
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Time-Domain Calibrated Measurements of Wideband Multisines Using a Large-Signal Network Analyzer by El Yaagoubi, M., Neveux, G., Barataud, D., Reveyrand, T., Nebus, J.-M., Verbeyst, F., Gizard, F., Puech, J.

“…This paper presents a calibrated measurement technique that enables phase and magnitude measurements of wideband multisines. This study is based on the use of…”
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Comparison of Harmonic Balance Simulated and Measured Ultra-short Low Frequency/Microwave Transients in Pulse to Pulse Characterization of GaN transistors by Ben-Sassi, Marwen, Neveux, Guillaume, Barataud, Denis

“…This paper describes, for the first time to our knowledge, a comparison of Pulse to Pulse (P2P) performances of an AlGaN/GaN HEMT obtained, experimentally on…”
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