Search Results - "Baranowski, J.M."

The observer effect in graphene oxide – How the standard measurements affect the chemical and electronic structure by Rogala, M., Dabrowski, P., Kowalczyk, P.J., Wlasny, I., Kozlowski, W., Busiakiewicz, A., Karaduman, I., Lipinska, L., Baranowski, J.M., Klusek, Z.

“…Complementary research is presented to prove that graphene oxide is highly sensitive to unintended modifications during standard measurements. X-ray…”
Get full text

Formation mechanism of graphene buffer layer on SiC(0001) by Strupinski, W., Grodecki, K., Caban, P., Ciepielewski, P., Jozwik-Biala, I., Baranowski, J.M.

“…The initial stage of the growth of graphene on SiC with the underlying mechanism of carbon layer early stage formation on the single crystal silicon carbide…”
Get full text

Reduction of dislocation density in heteroepitaxial GaN: role of SiH4 treatment by PAKUŁA, K, BOZEK, R, BARANOWSKI, J. M, JASINSKI, J, LILIENTAL-WEBER, Z

“…TEM and AFM data show that a significant reduction of threading dislocations in heteroepitaxial GaN/Al2O3 grown by MOCVD has been achieved. The reduction has…”
Get full text

History of the ``Jaszowiec'' Conference by Baranowski, J.M.

Get full text

Luminescence and reflectivity in the exciton region of homoepitaxial GaN layers grown on GaN substrates by Pakuła, K., Wysmołek, A., Korona, K.P., Baranowski, J.M., Stępniewski, R., Grzegory, I., Boćkowski, M., Jun, J., Krukowski, S., Wróblewski, M., Porowski, S.

“…In this work we report results of photoluminescence (PL) and reflectivity measurements in the exciton region of GaN homoepitaxial layers grown by metalorganic…”
Get full text

Impact of electrolyte intercalation on the corrosion of graphene-coated copper by Wlasny, I., Dabrowski, P., Rogala, M., Pasternak, I., Strupinski, W., Baranowski, J.M., Klusek, Z.

“…•Corrosion in graphene-coated copper mono- and polycrystals is investigated.•Graphene-coated copper monocrystal shows no traces of corrosion.•Copper oxides can…”
Get full text

Cathodoluminescence and depth-profiling cathodoluminescence studies of interface properties in MOCVD-grown InGaN/GaN/sapphire structures: role of GaN buffer layer by Godlewski, M, Goldys, E.M, Phillips, M.R, Pakuła, K, Baranowski, J.M

“…We report the results of room-temperature cathodoluminescence (CL) and of scanning CL and electron (SEM) microscopy of GaN/InGaN structure with a single InGaN…”
Get full text

The microstructure of gallium nitride monocrystals grown at high pressure by Leszczynski, M., Grzegory, I., Teisseyre, H., Suski, T., Bockowski, M., Jun, J., Baranowski, J.M., Porowski, S., Domagala, J.

“…This work shows the results of X-ray diffractometric measurements performed on gallium nitride (wurtzite structure, (00.1) oriented plates) bulk crystals grown…”
Get full text

Interactions of Ti and its oxides with selected surfaces: Si(100), HOPG(0001) and graphene/4H-SiC(0001) by Pabianek, K., Krukowski, P., Polański, K., Ciepielewski, P., Baranowski, J.M., Rogala, M., Kozłowski, W., Busiakiewicz, A.

“…The paper presents an interaction of Ti/Ti-oxides with: Si(100), HOPG(0001) and graphene/4H-SiC(0001) substrates. A thin layer (~3 nm) of Ti was deposited by…”
Get full text

Exciton photo-luminescence of GaN bulk crystals grown by the AMMONO method by Dwiliński, R, Doradziński, R, Garczyński, J, Sierzputowski, L, Baranowski, J.M, Kamińska, M

“…GaN in form of microcrystals were obtained using a new technique—the AMMONO method. The growth was performed at relatively low temperature and pressure…”
Get full text

Early oxidation stages of germanium substrate in the graphene/Ge(001) system by Dabrowski, P., Rogala, M., Pasternak, I., Krukowski, P., Baranowski, J.M., Strupinski, W., Lutsyk, I., Kowalczyk, D.A., Pawłowski, S., Klusek, Z.

“…Kelvin Probe Force Microscopy (KPFM) in combination with Atomic Force Microscopy (AFM), Scanning Tunneling Microscopy/Spectroscopy (STM/STS), and X-ray…”
Get full text

SEM and Raman analysis of graphene on SiC(0001) by Grodecki, K., Jozwik, I., Baranowski, J.M., Teklinska, D., Strupinski, W.

“…Graphene grown by a sublimation technique was studied by Scanning Electron Microscopy (SEM) and micro-Raman spectroscopy. The measurement area of a sample was…”
Get full text

Carbon incorporation in boron nitride grown by MOCVD under N2 flow by Caban, P.A., Michalowski, P.P., Wlasny, I., Gaca, J., Wojcik, M., Ciepielewski, P., Teklinska, D., Baranowski, J.M.

“…Boron Nitride (BN) films were grown on 2-inch sapphire substrates using metal organic chemical vapour deposition (MOCVD) using two different carrier gases,…”
Get full text

Effect of pressure on exciton energies of homoepitaxial GaN by Liu, Z.X., Korona, K.P., Syassen, K., Kuhl, J., Pakuła, K., Baranowski, J.M., Grzegory, I., Porowski, S.

“…Optical reflectance spectra of a homoepitaxial gallium nitride layer were measured under high pressure (0–10GPa) at low temperature (10K). The layer was grown…”
Get full text

Nitrogen doped epitaxial graphene on 4H-SiC(0001) – Experimental and theoretical study by Dabrowski, P., Rogala, M., Wlasny, I., Klusek, Z., Kopciuszynski, M., Jalochowski, M., Strupinski, W., Baranowski, J.M.

“…The experimental and theoretical investigations of morphological and electronic properties of nitrogen-doped epitaxial graphene grown by chemical vapor…”
Get full text

Effects of defect scattering on the photoluminescence of exciton-polaritons in n-GaN by Buyanova, I.A, Bergman, J.P, Monemar, B, Amano, H, Akasaki, I, Wysmolek, A, Lomiak, P, Baranowski, J.M, Pakula, K, Stepniewski, R, Korona, K.P, Grzegory, I, Bockowski, M, Porowski, S

“…Temperature dependent studies of the resonant and phonon-assisted radiative recombination of free excitons (FEs) in GaN are performed and are analyzed within…”
Get full text

Reduction of dislocation density in heteroepitaxial GaN: role of SiH 4 treatment by Pakuła, K., Bożek, R., Baranowski, J.M., Jasinski, J., Liliental-Weber, Z.

“…TEM and AFM data show that a significant reduction of threading dislocations in heteroepitaxial GaN/Al 2O 3 grown by MOCVD has been achieved. The reduction has…”
Get full text

Long-range order spontaneous superlattice in AlGaN epilayers by Pakuła, K., Borysiuk, J., Bożek, R., Baranowski, J.M.

“…The transmission electron microscopy and atomic force microscopy investigations of the spontaneously formed AlGaN superlattice are presented. It is found that…”
Get full text

Growth of GaN single crystals and properties of homoepitaxial MOCVD layers by Baranowski, J.M., Porowski, S.

“…Recently high quality GaN plates have been grown from the solution in liquid gallium at N/sub 2/ pressure up to 20 kbar and temperature close to 1600/spl…”
Get full text

The chemical vapour transport growth of ZnO single crystals by Mycielski, A., Kowalczyk, L., Szadkowski, A., Chwalisz, B., Wysmołek, A., Stępniewski, R., Baranowski, J.M., Potemski, M., Witowski, A., Jakieła, R., Barcz, A., Witkowska, B., Kaliszek, W., Jędrzejczak, A., Suchocki, A., Łusakowska, E., Kamińska, E.

“…Recently, ZnO attracts a wide interest as a promising material for the application in optoelectronic devices working in the blue and ultraviolet region and…”
Get full text