Search Results - "Baranowski, Izak"

Ultra-low turn-on voltage and on-resistance vertical GaN-on-GaN Schottky power diodes with high mobility double drift layers by Fu, Houqiang, Huang, Xuanqi, Chen, Hong, Lu, Zhijian, Baranowski, Izak, Zhao, Yuji

“…This letter reports the implementation of double-drift-layer (DDL) design into GaN vertical Schottky barrier diodes (SBDs) grown on free-standing GaN…”
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Investigation of GaN-on-GaN vertical p-n diode with regrown p-GaN by metalorganic chemical vapor deposition by Fu, Kai, Fu, Houqiang, Liu, Hanxiao, Alugubelli, Shanthan Reddy, Yang, Tsung-Han, Huang, Xuanqi, Chen, Hong, Baranowski, Izak, Montes, Jossue, Ponce, Fernando A., Zhao, Yuji

“…To mimic selective-area doping, p-GaN was regrown on an etched GaN surface on GaN substrates by metalorganic chemical vapor deposition. Vertical GaN-on-GaN p-n…”
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Characterizations of the nonlinear optical properties for (010) and (2¯01) beta-phase gallium oxide by Chen, Hong, Fu, Houqiang, Huang, Xuanqi, Montes, Jossue A, Yang, Tsung-Han, Baranowski, Izak, Zhao, Yuji

“…We report, for the first time, the characterizations on optical nonlinearities of beta-phase gallium oxide (β-Ga O ), where both (010) β-Ga O and (2¯01) β-Ga O…”
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Low loss GaN waveguides at the visible spectral wavelengths for integrated photonics applications by Chen, Hong, Fu, Houqiang, Huang, Xuanqi, Zhang, Xiaodong, Yang, Tsung-Han, Montes, Jossue A, Baranowski, Izak, Zhao, Yuji

“…We perform comprehensive studies on the fundamental loss mechanisms in III-nitride waveguides in the visible spectral region. Theoretical analysis shows that…”
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Active tracking system for visible light communication using a GaN-based micro-LED and NRZ-OOK by Lu, Zhijian, Tian, Pengfei, Chen, Hong, Baranowski, Izak, Fu, Houqiang, Huang, Xuanqi, Montes, Jossue, Fan, Youyou, Wang, Hongyi, Liu, Xiaoyan, Liu, Ran, Zhao, Yuji

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Energy band engineering of InGaN/GaN multi-quantum-well solar cells via AlGaN electron- and hole-blocking layers by Huang, Xuanqi, Chen, Hong, Fu, Houqiang, Baranowski, Izak, Montes, Jossue, Yang, Tsung-Han, Fu, Kai, Gunning, Brendan P., Koleske, Daniel D., Zhao, Yuji

“…In this paper, we perform a comprehensive study on energy band engineering of InGaN multi-quantum-well (MQW) solar cells using AlGaN electron- and…”
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Reliability analysis of InGaN/GaN multi-quantum-well solar cells under thermal stress by Huang, Xuanqi, Fu, Houqiang, Chen, Hong, Lu, Zhijian, Baranowski, Izak, Montes, Jossue, Yang, Tsung-Han, Gunning, Brendan P., Koleske, Dan, Zhao, Yuji

“…We investigate the thermal stability of InGaN solar cells under thermal stress at elevated temperatures from 400 °C to 500 °C. High Resolution X-Ray…”
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A Comparative Study on the Electrical Properties of Vertical ( \bar01 ) and (010) \beta -Ga2O3 Schottky Barrier Diodes on EFG Single-Crystal Substrates by Fu, Houqiang, Chen, Hong, Huang, Xuanqi, Baranowski, Izak, Montes, Jossue, Yang, Tsung-Han, Zhao, Yuji

“…This paper reports a comprehensive study on the anisotropic electrical properties of vertical (<inline-formula> <tex-math notation="LaTeX">\overline {\textsf…”
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Demonstration of AlN Schottky Barrier Diodes With Blocking Voltage Over 1 kV by Houqiang Fu, Baranowski, Izak, Xuanqi Huang, Hong Chen, Zhijian Lu, Montes, Jossue, Xiaodong Zhang, Yuji Zhao

“…This letter reports the first demonstration of 1-kV-class AlN Schottky barrier diodes on sapphire substrates by metal organic chemical vapor deposition. The…”
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High Performance Vertical GaN-on-GaN p-n Power Diodes With Hydrogen-Plasma-Based Edge Termination by Fu, Houqiang, Fu, Kai, Huang, Xuanqi, Chen, Hong, Baranowski, Izak, Yang, Tsung-Han, Montes, Jossue, Zhao, Yuji

“…This letter reports the first implementation of a hydrogen-plasma-based edge termination technique (HPET) in vertical GaN p-n power diodes grown on bulk GaN…”
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Active tracking system for visible light communication using a GaN-based micro-LED and NRZ-OOK by Lu, Zhijian, Tian, Pengfei, Chen, Hong, Baranowski, Izak, Fu, Houqiang, Huang, Xuanqi, Montes, Jossue, Fan, Youyou, Wang, Hongyi, Liu, Xiaoyan, Liu, Ran, Zhao, Yuji

“…Visible light communication (VLC) holds the promise of a high-speed wireless network for indoor applications and competes with 5G radio frequency (RF) system…”
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A Comparative Study on the Electrical Properties of Vertical ( $\bar{\sf2}01$ ) and (010) $\beta$ -Ga 2 O 3 Schottky Barrier Diodes on EFG Single-Crystal Substrates by Fu, Houqiang, Chen, Hong, Huang, Xuanqi, Baranowski, Izak, Montes, Jossue, Yang, Tsung-Han, Zhao, Yuji

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Threshold Switching and Memory Behaviors of Epitaxially Regrown GaN-on-GaN Vertical p-n Diodes With High Temperature Stability by Fu, Kai, Fu, Houqiang, Huang, Xuanqi, Yang, Tsung-Han, Chen, Hong, Baranowski, Izak, Montes, Jossue, Yang, Chen, Zhou, Jingan, Zhao, Yuji

“…This letter reports the observation of threshold switching and memory behaviors of epitaxially regrown GaN-on-GaN vertical p-n diodes. This mechanism was…”
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A Comparative Study on the Electrical Properties of Vertical ([Formula Omitted]) and (010) [Formula Omitted]-Ga2O3 Schottky Barrier Diodes on EFG Single-Crystal Substrates by Fu, Houqiang, Chen, Hong, Huang, Xuanqi, Baranowski, Izak, Montes, Jossue, Tsung-Han, Yang, Zhao, Yuji

“…This paper reports a comprehensive study on the anisotropic electrical properties of vertical ([Formula Omitted]) and (010) [Formula Omitted]-Ga2O3 Schottky…”
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Effect of Proton Radiation on Ultrawide Bandgap AlN Schottky Barrier Diodes by Montes, Jossue, Tsung-Han Yang, Houqiang Fu, Hong Chen, Xuanqi Huang, Kai Fu, Baranowski, Izak, Yuji Zhao

“…Lateral Pd/n-AlN Schottky barrier diodes (SBDs) were fabricated and subjected to 3-MeV proton irradiation at various fluences. Electrical and material…”
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InGaN-based solar cells for space applications by Yuji Zhao, Xuanqi Huang, Houqiang Fu, Hong Chen, Zhijian Lu, Montes, Jossue, Baranowski, Izak

“…III-nitrides InGaN solar cells have exhibited many favorable physical properties for space photovoltaic (PV) applications. Here we demonstrate the first…”
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Effect of crystalline anisotropy on vertical (-201) and (010) beta-Ga2O3 Schottky barrier diodes on EFG single-crystal substrates by Fu, Houqiang, Chen, Hong, Huang, Xuanqi, Baranowski, Izak, Montes, Jossue, Yang, Tsung-Han, Zhao, Yuji

“…IEEE Transactions on Electron Devices, 2018 Vertical (-201) and (010) beta-Ga2O3 Schottky barrier diodes (SBDs) were fabricated on single-crystal substrates…”
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Characterizations of the Nonlinear Optical Properties for (010) and (-201) Beta-phase Gallium Oxide by Chen, Hong, Fu, Houqiang, Huang, Xuanqi, Montes, Jossue A, Yang, Tsung-Han, Baranowski, Izak, Zhao, Yuji

“…We report, for the first time, the characterizations on optical nonlinearities of beta-phase gallium oxide (\b{eta}-Ga2O3), where both (010) \b{eta}-Ga2O3 and…”
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