Search Results - "Baranovskii, S.D."

Efficiency of exciton dissociation at internal organic interfaces beyond harmonic approximation by Wiemer, M., Koch, M., Lemmer, U., Pevtsov, A.B., Baranovskii, S.D.

“…[Display omitted] •Exciton dissociation at polymer–fullerene interfaces is studied theoretically.•The effect from interface dipoles is specially focused…”
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Avalanche multiplication in amorphous selenium and its utilization in imaging by Reznik, A., Baranovskii, S.D., Rubel, O., Jandieri, K., Kasap, S.O., Ohkawa, Y., Kubota, M., Tanioka, K., Rowlands, J.A.

“…Amorphous selenium (a-Se) is a well known photoconductor that is currently used in X-ray image detectors and HARP video tubes. Recent advances have made it…”
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Structural characteristics of gallium metal deposited on Si (001) by MOCVD by Werner, K., Beyer, A., Oelerich, J.O., Baranovskii, S.D., Stolz, W., Volz, K.

“…The epitaxial growth of high quality gallium containing III/V material on silicon offers a wide field of possible applications. While the growth of III/V…”
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On the Transport Properties of Microcrystalline Silicon at Low Temperatures by Zhou, J.-H., Baranovskii, S. D., Yamasaki, S., Ikuta, K., Tanaka, K., Kondo, M., Matsuda, A., Thomas, P.

“…The dark and photoconductivity have been measured over a wide temperature range with a high crystallinity hydrogenated microcrystalline silicon (μc‐Si:H)…”
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Theory to exciton dissociation at the interface between a conjugated polymer and an electron acceptor by Nenashev, A.V., Wiemer, M., Jansson, F., Baranovskii, S.D.

“…Experimental studies evidence that excitons in organic materials can efficiently dissociate into free electrons and holes at an intrinsic donor/acceptor…”
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Time-resolved photoluminescence of Ga(NAsP) multiple quantum wells grown on Si substrate: Effects of rapid thermal annealing by Woscholski, R., Shakfa, M.K., Gies, S., Wiemer, M., Rahimi-Iman, A., Zimprich, M., Reinhard, S., Jandieri, K., Baranovskii, S.D., Heimbrodt, W., Volz, K., Stolz, W., Koch, M.

“…Time-resolved photoluminescence (TR-PL) spectroscopy has been used to study the impact of rapid thermal annealing (RTA) on the optical properties and carrier…”
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Potential fluctuations in amorphous silicon by Baranovskii, S.D., Hensel, F., Ruckes, K., Thomas, P., Adriaenssens, G.J.

“…Recent measurements of the electron and hole drift mobilities and the optical absorption in hydrogenated amorphous silicon have strongly supported the presence…”
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Scaling description of positive magnetoresistivity in doped dilute magnetic semiconductors by Nenashev, A.V., Jansson, F., Petznick, S., Wiemer, M., Klar, P.J., Dvurechenskii, A.V., Gebhard, F., Baranovskii, S.D.

“…The effect of a large positive magnetoresistance (MR) in Zn1−xMnxSe:Cl materials in the hopping regime is studied experimentally and theoretically. A possible…”
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Spin-dependent localization effects in GaAs:Mn/MnAs granular paramagnetic–ferromagnetic hybrids at low temperatures by Michel, C., Thien, C.H., Ye, S., Klar, P.J., Heimbrodt, W., Baranovskii, S.D., Thomas, P., Lampalzer, M., Volz, K., Stolz, W., Goldlücke, B.

“…We compare the magneto-transport in paramagnetic–ferromagnetic GaAs:Mn/MnAs granular hybrids and paramagnetic GaAs:Mn reference samples. The differences in the…”
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Double-scaled disorder in Ga(N,As,P)/GaP multiquantum wells by Karcher, C., Jandieri, K., Kunert, B., Fritz, R., Volz, K., Stolz, W., Gebhard, F., Baranovskii, S.D., Heimbrodt, W.

“…The compositional dependence of the properties of metastable Ga(N,As,P) has been characterized optically by means of temperature dependent absorptive and…”
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Theoretical description of hopping transport in disordered materials by Baranovskii, S.D., Rubel, O., Thomas, P.

“…Incoherent hopping conduction has been revealed as the electronic transport mechanism in lightly doped microcrystalline semiconductors at low temperatures…”
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Effect of electric field on diffusion in disordered materials by Jansson, F., Nenashev, A.V., Baranovskii, S.D., Gebhard, F., Österbacka, R.

“…The effect of electric field on diffusion of charge carriers in disordered materials is studied by Monte Carlo computer simulations and analytical…”
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On the concentration and field dependences of the hopping mobility in disordered organic solids by Baranovskii, S.D., Rubel, O., Thomas, P.

“…Theoretical approaches to hopping transport of charge carriers in random organic solids are considered. Concepts well approved in the field of inorganic…”
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Percolation Approach to Hopping Transport in Organic Disordered Solids by Baranovskii, S.D., Zvyagin, I.P., Cordes, H., Yamasaki, S., Thomas, P.

“…Percolation approach is used to study the dc hopping conductivity and thermopower in systems with a Gaussian density of localized states typical for disordered…”
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Effect of electric field on diffusion in disordered materials by Jansson, F., Nenashev, A.V., Baranovskii, S.D., Gebhard, F., Österbacka, R.

“…The effect of electric field on diffusion of charge carriers in disordered materials is studied by Monte Carlo computer simulations and analytical…”
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Nanoanalytical quantification of the nitrogen content in Ga(NAs)∕GaAs by using transmission electron microscopy in combination with refined structure factor calculation by Volz, K., Rubel, O., Torunski, T., Baranovskii, S. D., Stolz, W.

“…We have studied systematically the nitrogen content in Ga(NAs)∕GaAs quantum wells by (002) dark-field transmission electron microscopy (TEM). The nitrogen…”
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Kinetic effects in recombination of optical excitations in disordered quantum heterostructures: Theory and experiment by Rubel, O., Baranovskii, S.D., Hantke, K., Kunert, B., Rühle, W.W., Thomas, P., Volz, K., Stolz, W.

“…An overview of recent experimental and theoretical results on stationary and time-dependent photoluminescence spectra in disordered semiconductor…”
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Transport Energy for F rster Processes by Baranovskii, S.D., Faber, T.

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Scattering and movement asymmetry in the one-dimensional lucky-drift simulation of the avalanche processes in disordered semiconductors by Jandieri, K., Rubel, O., Baranovskii, S.D., Reznik, A., Rowlands, J.A., Kasap, S.O.

“…A lucky-drift model for impact ionization has been recently successfully used to account for avalanche phenomenon in amorphous selenium (a-Se). The model…”
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Electronic transport in disordered organic and inorganic semiconductors by Baranovskii, S.D., Zvyagin, I.P., Cordes, H., Yamasaki, S., Thomas, P.

“…It is shown that theoretical methods developed for a description of hopping transport in disordered inorganic solids can be also successfully applied to a…”
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