Unraveling structural and compositional information in 3D FinFET electronic devices

Non-planar Fin Field Effect Transistors (FinFET) are already present in modern devices. The evolution from the well-established 2D planar technology to the design of 3D nanostructures rose new fabrication processes, but a technique capable of full characterization, particularly their dopant distribu...

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Bibliographic Details
Published in:Scientific reports Vol. 9; no. 1; pp. 11629 - 7
Main Authors: Trombini, Henrique, Marmitt, Gabriel Guterres, Alencar, Igor, Baptista, Daniel Lorscheitter, Reboh, Shay, Mazen, Frédéric, Pinheiro, Rafael Bortolin, Sanchez, Dario Ferreira, Senna, Carlos Alberto, Archanjo, Bráulio Soares, Achete, Carlos Alberto, Grande, Pedro Luis
Format: Journal Article
Language:English
Published: London Nature Publishing Group UK 12-08-2019
Nature Publishing Group
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Summary:Non-planar Fin Field Effect Transistors (FinFET) are already present in modern devices. The evolution from the well-established 2D planar technology to the design of 3D nanostructures rose new fabrication processes, but a technique capable of full characterization, particularly their dopant distribution, in a representative (high statistics) way is still lacking. Here we propose a methodology based on Medium Energy Ion Scattering (MEIS) to address this query, allowing structural and compositional quantification of advanced 3D FinFET devices with nanometer spatial resolution. When ions are backscattered, their energy losses unfold the chemistry of the different 3D compounds present in the structure. The FinFET periodicity generates oscillatory features as a function of backscattered ion energy and, in fact, these features allow a complete description of the device dimensions. Additionally, each measurement is performed over more than thousand structures, being highly representative in a statistical meaning. Finally, independent measurements using electron microscopy corroborate the proposed methodology.
ISSN:2045-2322
2045-2322
DOI:10.1038/s41598-019-48117-0