Search Results - "Bangs, J.W."

Higher Dislocation Density of Arsenic-Doped HgCdTe Material by Vilela, M.F., Olsson, K.R., Rybnicek, K., Bangs, J.W., Jones, K.A., Harris, S.F., Smith, K.D., Lofgreen, D.D.

“…There is a well-known direct negative correlation between dislocation density and optoelectronic device performance. Reduction in detector noise associated…”
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MBE Growth of HgCdTe on Large-Area Si and CdZnTe Wafers for SWIR, MWIR and LWIR Detection by Reddy, M., Peterson, J.M., Lofgreen, D.D., Franklin, J.A., Vang, T., Smith, E.P.G., Wehner, J.G.A., Kasai, I., Bangs, J.W., Johnson, S.M.

“…Molecular beam epitaxy (MBE) growth of HgCdTe on large-size Si (211) and CdZnTe (211)B substrates is critical to meet the demands of extremely uniform and…”
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Status of HgCdTe-MBE technology for producing dual-band infrared detectors by Rajavel, R.D, Brewer, P.D, Jamba, D.M, Jensen, J.E, LeBeau, C, Olson, G.L, Roth, J.A, Williamson, W.S, Bangs, J.W, Goetz, P, Johnson, J.L, Patten, E.A, Wilson, J.A

“…Progress on achieving reproducible growth of high performance, dual-band IR detector structures in HgCdTe grown by molecular beam epitaxy (MBE) is described…”
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