Search Results - "Bangs, J. W."

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  1. 1

    Molecular Beam Epitaxy Growth of HgCdTe on Large-Area Si and CdZnTe Substrates by Reddy, M., Peterson, J. M., Vang, T., Franklin, J. A., Vilela, M. F., Olsson, K., Patten, E. A., Radford, W. A., Bangs, J. W., Melkonian, L., Smith, E. P. G., Lofgreen, D. D., Johnson, S. M.

    Published in Journal of electronic materials (01-08-2011)
    “…This paper presents the status of HgCdTe growth on large-area Si and CdZnTe substrates at Raytheon Vision Systems (RVS). The different technological tools that…”
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    Journal Article Conference Proceeding
  2. 2

    High-Performance M/LWIR Dual-Band HgCdTe/Si Focal-Plane Arrays by Vilela, M. F., Olsson, K. R., Norton, E. M., Peterson, J. M., Rybnicek, K., Rhiger, D. R., Fulk, C. W., Bangs, J. W., Lofgreen, D. D., Johnson, S. M.

    Published in Journal of electronic materials (01-11-2013)
    “…Mercury cadmium telluride (HgCdTe) grown on large-area silicon (Si) substrates allows for larger array formats and potentially reduced focal-plane array (FPA)…”
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    Journal Article Conference Proceeding
  3. 3

    MBE Growth of HgCdTe on Large-Area Si and CdZnTe Wafers for SWIR, MWIR and LWIR Detection by Reddy, M., Peterson, J.M., Lofgreen, D.D., Franklin, J.A., Vang, T., Smith, E.P.G., Wehner, J.G.A., Kasai, I., Bangs, J.W., Johnson, S.M.

    Published in Journal of electronic materials (01-09-2008)
    “…Molecular beam epitaxy (MBE) growth of HgCdTe on large-size Si (211) and CdZnTe (211)B substrates is critical to meet the demands of extremely uniform and…”
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    Journal Article Conference Proceeding
  4. 4

    Achieving Manufacturing Readiness for 6-Inch HgCdTe on Silicon by Paden, L. A., Bangs, J. W., Emerson, R. M., Olshove, R. M., Norton, E. M., Garnett, D. A., Smith, E., Garvine, K. A., Peterson, J. M., Reddy, M.

    Published in Journal of electronic materials (01-07-2010)
    “…Six-inch HgCdTe-on-silicon wafer capability is important due to the increase in die size along with the reduction in pixel pitch. Successful manufacturing of…”
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    Journal Article Conference Proceeding
  5. 5

    Progress in the Molecular Beam Epitaxy of HgCdTe on Large-Area Si and CdZnTe Substrates by Reddy, M., Peterson, J. M., Johnson, S. M., Vang, T., Franklin, J. A., Patten, E. A., Radford, W. A., Bangs, J. W., Lofgreen, D. D.

    Published in Journal of electronic materials (01-08-2009)
    “…This paper presents the progress in the molecular beam epitaxy (MBE) growth of HgCdTe on large-area Si and CdZnTe substrates at Raytheon Vision Systems. We…”
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    Journal Article Conference Proceeding
  6. 6

    Demonstration of High-Quality MBE HgCdTe on 8-Inch Wafers by Reddy, M., Jin, X., Lofgreen, D. D., Franklin, J. A., Peterson, J. M., Vang, T., Juanko, N., Torres, F., Doyle, K., Hampp, A., Johnson, S. M., Bangs, J. W.

    Published in Journal of electronic materials (01-10-2019)
    “…High-quality mid-wave infrared (MWIR) double-layer heterojunction HgCdTe has been grown on 8-inch Si substrates using molecular beam epitaxy. We grew six…”
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    Journal Article
  7. 7

    Fabrication and characterization of small unit-cell molecular beam epitaxy grown HgCdTe-on-Si mid-wavelength infrared detectors by SMITH, E. P. G, VENZOR, G. M, PETRAITIS, Y, LIGUORI, M. V, LEVY, A. R, RABKIN, C. K, PETERSON, J. M, REDDY, M, JOHNSON, S. M, BANGS, J. W

    Published in Journal of electronic materials (01-08-2007)
    “…Small 15 µm unit-cell mid-wavelength infrared (MWIR) detectors have been fabricated and characterized at Raytheon Vision Systems (RVS) to enable the…”
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    Conference Proceeding Journal Article
  8. 8

    Defects and the Formation of Impurity ‘Hot Spots’ in HgCdTe/CdZnTe by Benson, J. D., Bubulac, L. O., Jacobs, R. N., Wang, A., Arias, J. M., Almeida, L. A., Stoltz, A., Reddy, M., Peterson, J. M., Johnson, S. M., Bangs, J. W., Lofgreen, D. D.

    Published in Journal of electronic materials (01-10-2019)
    “…The formation of impurity ‘hot spot’ macro-defects—localized high impurity level contaminates—is examined. The evolution of macro-defects through their…”
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    Journal Article
  9. 9

    Higher Dislocation Density of Arsenic-Doped HgCdTe Material by Vilela, M.F., Olsson, K.R., Rybnicek, K., Bangs, J.W., Jones, K.A., Harris, S.F., Smith, K.D., Lofgreen, D.D.

    Published in Journal of electronic materials (01-08-2014)
    “…There is a well-known direct negative correlation between dislocation density and optoelectronic device performance. Reduction in detector noise associated…”
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    Journal Article Conference Proceeding
  10. 10

    Status of HgCdTe-MBE technology for producing dual-band infrared detectors by Rajavel, R.D, Brewer, P.D, Jamba, D.M, Jensen, J.E, LeBeau, C, Olson, G.L, Roth, J.A, Williamson, W.S, Bangs, J.W, Goetz, P, Johnson, J.L, Patten, E.A, Wilson, J.A

    Published in Journal of crystal growth (01-06-2000)
    “…Progress on achieving reproducible growth of high performance, dual-band IR detector structures in HgCdTe grown by molecular beam epitaxy (MBE) is described…”
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    Journal Article
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    The Price-Anderson Act: A Half Billion Dollars of Federal Indemnity by Bangs, Will J.

    Published in American Bar Association Journal (01-12-1961)
    “…While the Atomic Energy Act of 1954 sanctioned the private construction and operation of atomic reactors, the development of the reactor industry was impeded…”
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    Journal Article Magazine Article