Search Results - "Bangs, J. W."
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Molecular Beam Epitaxy Growth of HgCdTe on Large-Area Si and CdZnTe Substrates
Published in Journal of electronic materials (01-08-2011)“…This paper presents the status of HgCdTe growth on large-area Si and CdZnTe substrates at Raytheon Vision Systems (RVS). The different technological tools that…”
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Journal Article Conference Proceeding -
2
High-Performance M/LWIR Dual-Band HgCdTe/Si Focal-Plane Arrays
Published in Journal of electronic materials (01-11-2013)“…Mercury cadmium telluride (HgCdTe) grown on large-area silicon (Si) substrates allows for larger array formats and potentially reduced focal-plane array (FPA)…”
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Journal Article Conference Proceeding -
3
MBE Growth of HgCdTe on Large-Area Si and CdZnTe Wafers for SWIR, MWIR and LWIR Detection
Published in Journal of electronic materials (01-09-2008)“…Molecular beam epitaxy (MBE) growth of HgCdTe on large-size Si (211) and CdZnTe (211)B substrates is critical to meet the demands of extremely uniform and…”
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Journal Article Conference Proceeding -
4
Achieving Manufacturing Readiness for 6-Inch HgCdTe on Silicon
Published in Journal of electronic materials (01-07-2010)“…Six-inch HgCdTe-on-silicon wafer capability is important due to the increase in die size along with the reduction in pixel pitch. Successful manufacturing of…”
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Journal Article Conference Proceeding -
5
Progress in the Molecular Beam Epitaxy of HgCdTe on Large-Area Si and CdZnTe Substrates
Published in Journal of electronic materials (01-08-2009)“…This paper presents the progress in the molecular beam epitaxy (MBE) growth of HgCdTe on large-area Si and CdZnTe substrates at Raytheon Vision Systems. We…”
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Journal Article Conference Proceeding -
6
Demonstration of High-Quality MBE HgCdTe on 8-Inch Wafers
Published in Journal of electronic materials (01-10-2019)“…High-quality mid-wave infrared (MWIR) double-layer heterojunction HgCdTe has been grown on 8-inch Si substrates using molecular beam epitaxy. We grew six…”
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Fabrication and characterization of small unit-cell molecular beam epitaxy grown HgCdTe-on-Si mid-wavelength infrared detectors
Published in Journal of electronic materials (01-08-2007)“…Small 15 µm unit-cell mid-wavelength infrared (MWIR) detectors have been fabricated and characterized at Raytheon Vision Systems (RVS) to enable the…”
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Conference Proceeding Journal Article -
8
Defects and the Formation of Impurity ‘Hot Spots’ in HgCdTe/CdZnTe
Published in Journal of electronic materials (01-10-2019)“…The formation of impurity ‘hot spot’ macro-defects—localized high impurity level contaminates—is examined. The evolution of macro-defects through their…”
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Higher Dislocation Density of Arsenic-Doped HgCdTe Material
Published in Journal of electronic materials (01-08-2014)“…There is a well-known direct negative correlation between dislocation density and optoelectronic device performance. Reduction in detector noise associated…”
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Journal Article Conference Proceeding -
10
Status of HgCdTe-MBE technology for producing dual-band infrared detectors
Published in Journal of crystal growth (01-06-2000)“…Progress on achieving reproducible growth of high performance, dual-band IR detector structures in HgCdTe grown by molecular beam epitaxy (MBE) is described…”
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Bilateral lesions of the anterior cingulate gyri; report of case
Published in Bulletin of the Los Angeles Neurological Society (01-09-1956)Get more information
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12
Status of HgCdTe-MBE technology for producing dual-band infrared detectors
Published in Journal of crystal growth (2000)Get full text
Conference Proceeding -
13
The Price-Anderson Act: A Half Billion Dollars of Federal Indemnity
Published in American Bar Association Journal (01-12-1961)“…While the Atomic Energy Act of 1954 sanctioned the private construction and operation of atomic reactors, the development of the reactor industry was impeded…”
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