Search Results - "Bandoh, Akira"

Impact of high-temperature growth by metal-organic vapor phase epitaxy on microstructure of AlN on 6H-SiC substrates by Imura, Masataka, Sugimura, Hiroki, Okada, Narihito, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Bandoh, Akira

“…We investigated impact of high-temperature growth by metal-organic vapor phase epitaxy on crystallographic quality of AlN on 6H-SiC (0 0 0 1) Si substrate…”
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Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers by Imura, Masataka, Nakano, Kiyotaka, Narita, Gou, Fujimoto, Naoki, Okada, Narihito, Balakrishnan, Krishnan, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Noro, Tadashi, Takagi, Takashi, Bandoh, Akira

“…Epitaxial lateral overgrowth (ELO) of high-quality AlN layers on trench-patterned AlN underlying layers has been demonstrated by high-temperature metal-organic…”
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Annihilation mechanism of threading dislocations in AlN grown by growth form modification method using V/III ratio by Imura, Masataka, Fujimoto, Naoki, Okada, Narihito, Balakrishnan, Krishnan, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Noro, Tadashi, Takagi, Takashi, Bandoh, Akira

“…High-quality AlN layers with atomically flat surface were grown on a c-plane sapphire substrate by high-temperature metal-organic vapor phase epitaxy…”
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Influence of High Temperature in the Growth of Low Dislocation Content AlN Bridge Layers on Patterned 6H-SiC Substrates by Metalorganic Vapor Phase Epitaxy by Balakrishnan, Krishnan, Bandoh, Akira, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

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AlGaN/GaInN/GaN heterostructure field-effect transistor by Ikki, Hiromichi, Isobe, Yasuhiro, Iida, Daisuke, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu, Amano, Hiroshi, Bandoh, Akira, Udagawa, Takashi

“…We report on the electrical properties of AlGaN/GaInN heterostructures fabricated with various InN molar fractions from 0 to 0.60 in GaInN on a GaN template…”
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Epitaxial lateral overgrowth of AlxGa1-xN (x > 0.2) on sapphire and its application to UV-B-light-emitting devices by IIDA, Kazuyoshi, KAWASHIMA, Takeshi, IWAYA, Motoaki, KAMIYAMA, Satoshi, AMANO, Hiroshi, AKASAKI, Isamu, BANDOH, Akira

“…Crack-free and low-dislocation-density AlxGa1-xN with x higher than 0.2 was successfully grown on a grooved AlN template prepared on a sapphire substrate…”
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High-quality 100/150 mm p-type 4H-SiC epitaxial wafer for high-voltage bipolar devices by Ishibashi, Naoto, Fukada, Keisuke, Bandoh, Akira, Momose, Kenji, Osawa, Hiroshi

“…This paper presents a high-quality 100/150 mm p-type 4H-SiC epitaxial wafer prepared by chemical vapor deposition; this wafer is suitable for high-voltage…”
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Depth profile of doping concentration in thick (> 100 μm) and low-doped (14 cm−3) 4H-SiC epilayers by Fukada, Keisuke, Ishibashi, Naoto, Miyasaka, Yoshihiko, Bandoh, Akira, Momose, Kenji, Osawa, Hiroshi

“…The depth profiles of n-type doping concentration in thick (>100 μm) and low-doped (<; 4 × 10 14 cm -3 ) 4H-SiC epilayers grown by chemical vapor deposition…”
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High-Temperature Metal-Organic Vapor Phase Epitaxial Growth of AlN on Sapphire by Multi Transition Growth Mode Method Varying V/III Ratio by Imura, Masataka, Nakano, Kiyotaka, Fujimoto, Naoki, Okada, Narihito, Balakrishnan, Krishnan, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Noro, Tadashi, Takagi, Takashi, Bandoh, Akira

“…High-quality AlN layers were grown on c -plane sapphire substrates by high-temperature metal-organic vapor phase epitaxy. AlN layers of about 9 µm in thickness…”
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Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy by Imura, Masataka, Nakano, Kiyotaka, Fujimoto, Naoki, Okada, Narihito, Balakrishnan, Krishnan, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Noro, Tadashi, Takagi, Takashi, Bandoh, Akira

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Epitaxial lateral overgrowth of Al x Ga 1− x N ( x>0.2) on sapphire and its application to UV-B-light-emitting devices by Iida, Kazuyoshi, Kawashima, Takeshi, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Bandoh, Akira

“…Crack-free and low-dislocation-density Al x Ga 1− x N with x higher than 0.2 was successfully grown on a grooved AlN template prepared on a sapphire substrate…”
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Thermodynamic Aspects of Growth of AlGaN by High-Temperature Metal Organic Vapor Phase Epitaxy by Okada, Narihito, Fujimoto, Naoki, Kitano, Tsukasa, Narita, Gou, Imura, Masataka, Balakrishnan, Krishnan, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Shimono, Kenji, Noro, Tadashi, Takagi, Takashi, Bandoh, Akira

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