Search Results - "Banaszeski da Silva, Mauricio"

A Compact Statistical Model for the Low-Frequency Noise in Halo-Implanted MOSFETs: Large RTN Induced by Halo Implants by Banaszeski da Silva, Mauricio, Both, Thiago H., Tuinhout, Hans P., Zegers-van Duijnhoven, Adrie, Wirth, Gilson I., Scholten, Andries J.

“…In this paper, we propose a novel compact statistical model for the low-frequency noise (LFN) of MOS devices with halo implants. The compact model is suited…”
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A Physics-Based Statistical RTN Model for the Low Frequency Noise in MOSFETs by Banaszeski da Silva, Mauricio, Tuinhout, Hans P., Zegers-van Duijnhoven, Adrie, Wirth, Gilson I., Scholten, Andries J.

“…In this paper, we develop a statistical model for random telegraph noise (RTN) related low-frequency noise (LFN). With our proposed model, one can calculate…”
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Autocorrelation Analysis as a Technique to Study Physical Mechanisms of MOSFET Low-Frequency Noise by Both, Thiago H., Croon, Jeroen A., Banaszeski da Silva, Mauricio, Tuinhout, Hans P., Scholten, Andries J., Zegers-van Duijnhoven, Adrie, Wirth, Gilson I.

“…A low-frequency noise (LFN) analysis technique is introduced, based on the autocorrelation of the LFN spectra in terms of frequency, biasing, and temperature…”
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Random Telegraph Noise in Analog CMOS Circuits by da Silva, Mauricio Banaszeski, Wirth, Gilson I., Tuinhout, Hans P., Duijnhoven, Adrie Zegers-van, Scholten, Andries J.

“…Flicker noise, or 1/f noise, is known to increase as devices scale down. However, as the scaling of MOS transistors advances, the effect of individual oxide…”
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A Compact Model for the Statistics of the Low-Frequency Noise of MOSFETs With Laterally Uniform Doping by Banaszeski da Silva, Mauricio, Tuinhout, Hans P., Zegers-van Duijnhoven, Adrie, Wirth, Gilson I., Scholten, Andries J.

“…In this paper, we develop a compact physics-based statistical model for random telegraph noise-related low-frequency noise in bulk MOSFETS with laterally…”
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Random Telegraph Noise Modeling for Circuit Analysis: RTN in Ring Oscillators by da Silva, Mauricio Banaszeski, Both, Thiago H., Wirth, Gilson I.

“…In highly scaled MOSFETs, random telegraph noise (RTN) can decrease the reliability and yield of circuits. RTN is produced by charge trapping, which in large…”
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A variability-based analysis technique revealing physical mechanisms of MOSFET low-frequency noise by Both, Thiago H., Croon, Jeroen A., Banaszeski da Silva, Mauricio, Tuinhout, Hans P., Zegers-van Duijnhoven, Adrie, Scholten, Andries J., Wirth, Gilson I.

“…This paper presents a technique for statistical analysis of MOSFET low-frequency noise (LFN) based on the autocorrelation coefficient of numerous LFN power…”
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A physics-based RTN variability model for MOSFETs by Banaszeski da Silva, Mauricio, Tuinhout, Hans, Zegers-van Duijnhoven, Adrie, Wirth, Gilson I., Scholten, Andries

“…Low Frequency Noise (LFN) and Random Telegraph Noise (RTN) are performance limiters in many analog and digital circuits. For small area devices the noise PSD…”
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