Influence of GaAs/InAs quasi-monolayer on the structural and optical properties of InAs/GaAs quantum dots

InAs QDs on strained {GaAs/InAs} quasi-monolayer (QML) with an alternative growth mechanism were grown by molecular beam epitaxy (MBE). The properties of quantum dots (QDs) were investigated by transmission electron microscopy (TEM), photoluminescence (PL), and photoreflectance (PR). TEM images and...

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Bibliographic Details
Published in:	Journal of crystal growth Vol. 252; no. 4; pp. 493 - 498
Main Authors:	Leem, Jae-Young, Jeon, Minhyun, Lee, Jewon, Cho, Guansik, Lee, Cheul-Ro, Kim, Jong Su, Kang, Se-Kyung, Ban, S.I., Lee, J.I., Cho, Hyung Koun
Format:	Journal Article
Language:	English
Published:	Amsterdam Elsevier B.V 01-05-2003 Elsevier
Subjects:	A1. Photoluminescence A3. Molecular beam epitaxy A3. Quantum dots Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science; rheology Exact sciences and technology Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties Materials science Methods of deposition of films and coatings; film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures Physics Quantum dots Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) 78.66.Fd 81.15.Hi A3. Molecular beam epitaxy A3. Quantum dots 81.05.Ea A1. Photoluminescence Stresses 78.66.Fd 81.05.Ea 81.15.Hi A1. Photoluminescence Gallium arsenides Inorganic compounds Epitaxial layers Quantum dots Photoluminescence Photoreflectance Crystal growth from vapors Experimental study High-resolution methods Indium arsenides Characterization Transmission electron microscopy Monolayers Growth mechanism Molecular beam epitaxy Arsenides III-V semiconductors
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Summary:	InAs QDs on strained {GaAs/InAs} quasi-monolayer (QML) with an alternative growth mechanism were grown by molecular beam epitaxy (MBE). The properties of quantum dots (QDs) were investigated by transmission electron microscopy (TEM), photoluminescence (PL), and photoreflectance (PR). TEM images and PR spectra of InAs QDs with strained {GaAs/InAs} QML only show a lack of the wetting layer (WL) compared with conventional InAs QDs sample. The Photoluminescence (PL) emission peak of the InAs QDs with 10 periods strained {GaAs/InAs} QML is red-shifted by 180 meV at 10 K relative to the reference InAs QDs sample which has no {GaAs/InAs} QML. The InAs QDs with 10 periods {GaAs/InAs} QML also show a strong PL emission with 1.32 μm at room temperature. Similar to the various periods of QML in InAs QDs sample, the emission wavelength of InAs QDs changes significantly toward the long wavelength emission.
Bibliography:	ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23
ISSN:	0022-0248 1873-5002
DOI:	10.1016/S0022-0248(03)00866-2