Search Results - "Ball, D.R."

The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM by Warren, K.M., Weller, R.A., Mendenhall, M.H., Reed, R.A., Ball, D.R., Howe, C.L., Olson, B.D., Alles, M.L., Massengill, L.W., Schrimpf, R.D., Haddad, N.F., Doyle, S.E., McMorrow, D., Melinger, J.S., Lotshaw, W.T.

“…Heavy ion irradiation was simulated using a Geant4 based Monte-Carlo transport code. Electronic and nuclear physics were used to generate statistical profiles…”
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Analysis of Parasitic PNP Bipolar Transistor Mitigation Using Well Contacts in 130 nm and 90 nm CMOS Technology by Olson, B.D., Amusan, O.A., Dasgupta, S., Massengill, L.W., Witulski, A.F., Bhuva, B.L., Alles, M.L., Warren, K.M., Ball, D.R.

“…Three-dimensional TCAD models are used in mixed- mode simulations to analyze the effectiveness of well contacts at mitigating parasitic PNP bipolar conduction…”
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Characterizing SRAM Single Event Upset in Terms of Single and Multiple Node Charge Collection by Black, J.D., Ball, D.R., Robinson, W.H., Fleetwood, D.M., Schrimpf, R.D., Reed, R.A., Black, D.A., Warren, K.M., Tipton, A.D., Dodd, P.E., Haddad, N.F., Xapsos, M.A., Kim, H.S., Friendlich, M.

“…A well-collapse source-injection mode for SRAM SEU is demonstrated through TCAD modeling. The recovery of the SRAM's state is shown to be based upon the…”
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The Disconnected Epidural Catheter: A Survey of Current Practice in Scotland by Paton, L, Jefferson, P, Ball, D.R

“…(Eur J Anaesthesiol. 2012;29(9):453–455)…”
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The effect of metallization Layers on single event susceptibility by Kobayashi, A.S., Ball, D.R., Warren, K.M., Reed, R.A., Haddad, N., Mendenhall, M.H., Schrimpf, R.D., Weller, R.A.

“…We investigate the effects of metallization layers on the radiation hardness of an epitaxial CMOS memory technology using Monte Carlo simulations. A…”
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Role of heavy-ion nuclear reactions in determining on-orbit single event error rates by Howe, C.L., Weller, R.A., Reed, R.A., Mendenhall, M.H., Schrimpf, R.D., Warren, K.M., Ball, D.R., Massengill, L.W., LaBel, K.A., Howard, J.W., Haddad, N.F.

“…Simulations show that neglecting ion-ion interaction processes (both particles having Z>1) results in an underestimation of the total on-orbit single event…”
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Simultaneous single event charge sharing and parasitic bipolar conduction in a highly-scaled SRAM design by Olson, B.D., Ball, D.R., Warren, K.M., Massengill, L.W., Haddad, N.F., Doyle, S.E., McMorrow, D.

“…A novel mechanism for upset is seen in a commercially available 0.25 /spl mu/m 10-T SEE hardened SRAM cell. Unlike traditional multiple node charge collection…”
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Separation of ionization and displacement damage using gate-controlled lateral PNP bipolar transistors by Ball, D.R., Schrimpf, R.D., Barnaby, H.J.

“…Proton irradiation produces both ionization and displacement damage in semiconductor devices. In this paper, a technique for separating the effects of these…”
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Multi-Scale Simulation of Radiation Effects in Electronic Devices by Schrimpf, R.D., Warren, K.M., Ball, D.R., Weller, R.A., Reed, R.A., Fleetwood, D.M., Massengill, L.W., Mendenhall, M.H., Rashkeev, S.N., Pantelides, S.T., Alles, M.A.

“…As integrated circuits become smaller and more complex, it has become increasingly difficult to simulate their responses to radiation. The distance and time…”
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A simple way of securing drains by Clark, L.A, Clark, M.H, Ball, D.R

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Simulating Nuclear Events in a TCAD Model of a High-Density SEU Hardened SRAM Technology by Ball, D.R., Warren, K.M., Weller, R.A., Reed, R.A., Kobayashi, A., Pellish, J.A., Mendenhall, M.H., Howe, C.L., Massengill, L.W., Schrimpf, R.D., Haddad, N.F.

“…The interaction between a heavy ion and the overlayer materials in an integrated circuit may result in a nuclear reaction. This reaction leads to a charge…”
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A new view of safety: Safety 2 by Ball, D.R., Frerk, C.

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The impact of mechanical stress on the total-dose response of linear bipolar transistors with various passivation layers by Cizmarik, R.R., Schrimpf, R.D., Fleetwood, D.M., Galloway, K.F., Platteter, D.G., Shaneyfelt, M.R., Pease, R.L., Boch, J., Ball, D.R., Rowe, J.D., Maher, M.C.

“…In this work, we investigate how externally applied mechanical stress impacts the total dose hardness and enhanced low-dose-rate sensitivity of linear bipolar…”
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Videolaryngoscopy as a new standard of care by Lafferty, B.D., Ball, D.R., Williams, D.

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Test structures for analyzing proton radiation effects in bipolar technologies by Barnaby, H.J., Schrimpf, R.D., Galloway, K.F., Ball, D.R., Pease, R.L., Fouillat, P.

“…Structures integrated onto a BiCMOS test chip are specially designed to characterize the complex mechanisms related to proton radiation response in bipolar…”
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Effects of Collected Charge and Drain Area on SE Response of SRAMs at the 5-nm FinFET Node by Pieper, N.J., Xiong, Y., Ball, D.R., Pasternak, J., Bhuva, B.L.

“…Single-port (SP) and two-port (TP) SRAM exposure to low-energy protons, alpha particles, and heavy-ions with varying supply voltages show particle linear…”
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Letter 3 by Watson, S.J., Jefferson, P., Ball, D.R.

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Airway management strategy for odentogenous abscess by Cassells, N.C.L., Ball, D.R.

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Universal neuromuscular blockade monitoring – a reply by Rodney, G., Raju, P.K.B.C., Ball, D.R.

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Scaling and soft errors: Moore of the same for SOI ? by Alles, M.L., Ball, D.R., Massengill, L.W., Schrimpf, R.D., Reed, R.A., Bhuva, B.L.

“…The continued path on Moore's Law has increased the concern about soft errors, even in terrestrial applications. Multiple device (multiple bit) interactions…”
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