Search Results - "Baliga, J"

Monolithically Integrated 4H-SiC MOSFET and JBS Diode (JBSFET) Using a Single Ohmic/Schottky Process Scheme by Woongje Sung, Baliga, B. J.

“…This letter reports a new 900 V 4H-SiC JBSFET containing an MOSFET with an integrated JBS diode in the center area of the chip. Both MOSFET and JBS diode…”
Get full text

On Developing One-Chip Integration of 1.2 kV SiC MOSFET and JBS Diode (JBSFET) by Woongje Sung, Baliga, B. J.

“…This paper presents the design, fabrication, and characterization of the SiC JBSFET (junction barrier Schottky (JBS) diode integrated MOSFET). The fabrication…”
Get full text

Green Cloud Computing: Balancing Energy in Processing, Storage, and Transport by Baliga, Jayant, Ayre, Robert W. A., Hinton, Kerry, Tucker, Rodney S.

“…Network-based cloud computing is rapidly expanding as an alternative to conventional office-based computing. As cloud computing becomes more widespread, the…”
Get full text

Energy Consumption in Optical IP Networks by Baliga, J., Ayre, R., Hinton, K., Sorin, W.V., Tucker, R.S.

“…As community concerns about global energy consumption grow, the power consumption of the Internet is becoming an issue of increasing importance. In this paper,…”
Get full text

A New Edge Termination Technique for High-Voltage Devices in 4H-SiC-Multiple-Floating-Zone Junction Termination Extension by Woongje Sung, Van Brunt, E., Baliga, B. J., Huang, A. Q.

“…A new edge termination method, referred to as multiple-floating-zone junction termination extension (MFZ-JTE), is presented for high-voltage devices in 4H-SiC…”
Get full text

Evolution of WDM Optical IP Networks: A Cost and Energy Perspective by Tucker, R.S., Parthiban, R., Baliga, J., Hinton, K., Ayre, R.W.A., Sorin, W.V.

“…We review technologies and architectures for WDM optical IP networks from the viewpoint of capital expenditure and network energy consumption. We show how…”
Get full text

Implant Straggle Impact on 1.2 kV SiC Power MOSFET Static and Dynamic Parameters by Agarwal, Aditi, Baliga, B. J.

“…Significant impact of the ion-implant straggle of the P + shielding region on the static and dynamic characteristics of 1.2 kV 4H-SiC power MOSFETs is…”
Get full text

2.3 kV 4H-SiC Planar-Gate Accumulation Channel Power JBSFETs: Analysis of Experimental Data by Agarwal, Aditi, Baliga, B. J.

“…Experimental results obtained for 2.3 kV SiC planar-gate power JBSFETs with different cell topologies are analyzed in this article using analytical models and…”
Get full text

Analytical Modeling of IGBTs: Challenges and Solutions by Baliga, B. J.

“…With the availability of advanced computing capability, it is fashionable to analyze and design insulated-gate bipolar transistors (IGBTs) using sophisticated…”
Get full text

Assessment of Linear, Hexagonal, and Octagonal Cell Topologies for 650 V 4H-SiC Inversion-Channel Planar-Gate Power JBSFETs Fabricated With 27 nm Gate Oxide Thickness by Agarwal, Aditi, Han, Kijeong, Baliga, B. J.

“…A 27 nm gate oxide thickness has been successfully used for manufacturing high performance 650V 4H-SiC planar-gate, inversion-channel power JBSFETs in a 6-inch…”
Get full text

A Near Ideal Edge Termination Technique for 4500V 4H-SiC Devices: The Hybrid Junction Termination Extension by Woongje Sung, Baliga, B. J.

“…This letter presents a new edge termination technique named a hybrid junction termination extension (Hybrid-JTE), which combines ring-assisted JTE and multiple…”
Get full text

A Novel 1.2 kV 4H-SiC Buffered-Gate (BG) MOSFET: Analysis and Experimental Results by Han, Kijeong, Baliga, B. J., Sung, Woongje

“…A novel 1.2-kV-rated 4H-SiC buffered-gate MOSFET (BG-MOSFET) structure is proposed and experimentally demonstrated to have superior high frequency…”
Get full text

A New Method for Blocking Probability Evaluation in OBS/OPS Networks With Deflection Routing by Wong, E.W.M., Baliga, J., Zukerman, M., Zalesky, A., Raskutti, G.

“…In this paper, we present a new method for the estimation of blocking probabilities in bufferless optical burst or packet switched networks. In such networks,…”
Get full text

Comparison of Four Cell Topologies for 1.2-kV Accumulation- and Inversion-Channel 4H-SiC MOSFETs: Analysis and Experimental Results by Han, Kijeong, Baliga, B. J.

“…The electrical characteristics of 1.2-kV-rated 4H-SiC accumulation (Acc) and inversion (Inv) channel MOSFETs with linear, square, hexagonal, and octagonal cell…”
Get full text

Comprehensive Physics of Third Quadrant Characteristics for Accumulation- and Inversion-Channel 1.2-kV 4H-SiC MOSFETs by Han, Kijeong, Baliga, B. J.

“…Detailed physics of the third quadrant electrical characteristics of 1.2-kV rated 4H-SiC accumulation (Acc) and inversion (Inv) channel MOSFETs, based on…”
Get full text

The 1.2-kV 4H-SiC OCTFET: A New Cell Topology With Improved High-Frequency Figures-of-Merit by Han, Kijeong, Baliga, B. J.

“…A 1.2 kV rated 4H-SiC OCTFET device with octagonal-cell topology is proposed and experimentally demonstrated for the first time. The device was first optimized…”
Get full text

Comparison of 2.3-kV 4H-SiC Accumulation-Channel Planar Power MOSFETs Fabricated With Linear, Square, Hexagonal, and Octagonal Cell Topologies by Agarwal, Aditi, Han, Kijeong, Baliga, B. J.

“…The performance of four cell topologies is compared for 2.3-kV 4H-SiC power MOSFETs fabricated in a commercial 6-in foundry. The devices were simultaneously…”
Get full text

650-V 4H-SiC Planar Inversion-Channel Power JBSFETs With 55-nm Gate Oxide: Relative Performance of Three Cell Types by Agarwal, Aditi, Han, Kijeong, Baliga, B. J.

“…Planar 650-V 4H-silicon carbide (SiC), inversion-channel, 55-nm gate oxide junction barrier Schottky field effect transistors (JBSFETs) with three types of…”
Get full text

Analysis and Experimental Quantification of 1.2-kV 4H-SiC Split-Gate Octagonal MOSFET by Han, Kijeong, Baliga, B. J.

“…A 1.2-kV rated 4H-SiC split-gate octagonal cell MOSFET (SG-OCTFET) is proposed and successfully fabricated in a 6-in foundry for the first time. The measured…”
Get full text

Service Failure and Recovery in B2B Markets – A Morphological Analysis by Baliga, Ashwin J., Chawla, Vaibhav, Sunder M, Vijaya, Ganesh, L.S., Sivakumaran, Bharadhwaj

“…•Morphology of Service Failure and Recovery in B2B markets is analyzed.•Eight dimensions and 62 variants are identified.•418 research gaps identified using a…”
Get full text