Search Results - "Baliga, B J"

Monolithically Integrated 4H-SiC MOSFET and JBS Diode (JBSFET) Using a Single Ohmic/Schottky Process Scheme by Woongje Sung, Baliga, B. J.

“…This letter reports a new 900 V 4H-SiC JBSFET containing an MOSFET with an integrated JBS diode in the center area of the chip. Both MOSFET and JBS diode…”
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On Developing One-Chip Integration of 1.2 kV SiC MOSFET and JBS Diode (JBSFET) by Woongje Sung, Baliga, B. J.

“…This paper presents the design, fabrication, and characterization of the SiC JBSFET (junction barrier Schottky (JBS) diode integrated MOSFET). The fabrication…”
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A New Edge Termination Technique for High-Voltage Devices in 4H-SiC-Multiple-Floating-Zone Junction Termination Extension by Woongje Sung, Van Brunt, E., Baliga, B. J., Huang, A. Q.

“…A new edge termination method, referred to as multiple-floating-zone junction termination extension (MFZ-JTE), is presented for high-voltage devices in 4H-SiC…”
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Implant Straggle Impact on 1.2 kV SiC Power MOSFET Static and Dynamic Parameters by Agarwal, Aditi, Baliga, B. J.

“…Significant impact of the ion-implant straggle of the P + shielding region on the static and dynamic characteristics of 1.2 kV 4H-SiC power MOSFETs is…”
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2.3 kV 4H-SiC Planar-Gate Accumulation Channel Power JBSFETs: Analysis of Experimental Data by Agarwal, Aditi, Baliga, B. J.

“…Experimental results obtained for 2.3 kV SiC planar-gate power JBSFETs with different cell topologies are analyzed in this article using analytical models and…”
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Assessment of Linear, Hexagonal, and Octagonal Cell Topologies for 650 V 4H-SiC Inversion-Channel Planar-Gate Power JBSFETs Fabricated With 27 nm Gate Oxide Thickness by Agarwal, Aditi, Han, Kijeong, Baliga, B. J.

“…A 27 nm gate oxide thickness has been successfully used for manufacturing high performance 650V 4H-SiC planar-gate, inversion-channel power JBSFETs in a 6-inch…”
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A Near Ideal Edge Termination Technique for 4500V 4H-SiC Devices: The Hybrid Junction Termination Extension by Woongje Sung, Baliga, B. J.

“…This letter presents a new edge termination technique named a hybrid junction termination extension (Hybrid-JTE), which combines ring-assisted JTE and multiple…”
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A Novel 1.2 kV 4H-SiC Buffered-Gate (BG) MOSFET: Analysis and Experimental Results by Han, Kijeong, Baliga, B. J., Sung, Woongje

“…A novel 1.2-kV-rated 4H-SiC buffered-gate MOSFET (BG-MOSFET) structure is proposed and experimentally demonstrated to have superior high frequency…”
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Comparison of Four Cell Topologies for 1.2-kV Accumulation- and Inversion-Channel 4H-SiC MOSFETs: Analysis and Experimental Results by Han, Kijeong, Baliga, B. J.

“…The electrical characteristics of 1.2-kV-rated 4H-SiC accumulation (Acc) and inversion (Inv) channel MOSFETs with linear, square, hexagonal, and octagonal cell…”
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Comprehensive Physics of Third Quadrant Characteristics for Accumulation- and Inversion-Channel 1.2-kV 4H-SiC MOSFETs by Han, Kijeong, Baliga, B. J.

“…Detailed physics of the third quadrant electrical characteristics of 1.2-kV rated 4H-SiC accumulation (Acc) and inversion (Inv) channel MOSFETs, based on…”
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The 1.2-kV 4H-SiC OCTFET: A New Cell Topology With Improved High-Frequency Figures-of-Merit by Han, Kijeong, Baliga, B. J.

“…A 1.2 kV rated 4H-SiC OCTFET device with octagonal-cell topology is proposed and experimentally demonstrated for the first time. The device was first optimized…”
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Comparison of 2.3-kV 4H-SiC Accumulation-Channel Planar Power MOSFETs Fabricated With Linear, Square, Hexagonal, and Octagonal Cell Topologies by Agarwal, Aditi, Han, Kijeong, Baliga, B. J.

“…The performance of four cell topologies is compared for 2.3-kV 4H-SiC power MOSFETs fabricated in a commercial 6-in foundry. The devices were simultaneously…”
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650-V 4H-SiC Planar Inversion-Channel Power JBSFETs With 55-nm Gate Oxide: Relative Performance of Three Cell Types by Agarwal, Aditi, Han, Kijeong, Baliga, B. J.

“…Planar 650-V 4H-silicon carbide (SiC), inversion-channel, 55-nm gate oxide junction barrier Schottky field effect transistors (JBSFETs) with three types of…”
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Analytical Modeling of IGBTs: Challenges and Solutions by Baliga, B. J.

“…With the availability of advanced computing capability, it is fashionable to analyze and design insulated-gate bipolar transistors (IGBTs) using sophisticated…”
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Analysis and Experimental Quantification of 1.2-kV 4H-SiC Split-Gate Octagonal MOSFET by Han, Kijeong, Baliga, B. J.

“…A 1.2-kV rated 4H-SiC split-gate octagonal cell MOSFET (SG-OCTFET) is proposed and successfully fabricated in a 6-in foundry for the first time. The measured…”
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Operation of 1.2-kV 4H-SiC Accumulation and Inversion Channel Split-Gate (SG) MOSFETs at Elevated Temperatures by Han, Kijeong, Baliga, B. J.

“…Numerical simulations, with experimental validation, have been used to demonstrate that the 1.2-kV-rated accumulation and inversion mode channel 4H-SiC…”
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1.2-kV 4H-SiC SenseFET With Monolithically Integrated Sensing Resistor by Han, Kijeong, Baliga, B. J.

“…A 1.2 kV rated 4H-SiC SenseFET structure with monolithically integrated sensing resistor is proposed and experimentally demonstrated. The SenseFET was…”
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Comparison of 6H-SiC, 3C-SiC, and Si for power devices by Bhatnagar, M., Baliga, B.J.

“…The drift region properties of 6H- and 3C-SiC-based Schottky rectifiers and power MOSFETs that result in breakdown voltages from 50 to 5000 V are defined…”
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User-Programmable Short-Circuit Capability Enhancement for 1.2 kV Si IGBTs using a 40 V Si Enhancement-Mode MOSFET connected in Series with the Emitter by Kanale, Ajit, Baliga, B. J.

“…Commercially available Si IGBTs are designed in two forms - i) optimized for low VCE,SAT but with poor SC ruggedness, and ii) optimized to achieve good…”
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Design and fabrication of 1400V 4H-SiC accumulation mode MOSFETs (ACCUFETs) by Sung, Woongje, Baliga, B. J.

“…Summary form only given. The complete presentation was not made available for publication as part of the conference proceedings. This paper presents design,…”
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