Search Results - "Balakirev, S. V."
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Study of Nanoscale Profiling Modes of GaAs Epitaxial Structures by Focused Ion Beams
Published in Nanotechnologies in Russia (2018)“…The nanoscale profiling modes of epitaxial GaAs layers are experimentally studied through focused ion beams (FIB). The regularities of the influence of ion…”
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Journal Article -
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Monte Carlo investigation of the influence of V/III flux ratio on GaAs/GaAs(001) submonolayer epitaxy
Published in Technical physics (01-07-2016)“…The influence of the V/III flux ratio on the submonolayer growth of GaAs on the GaAs (001) surface is simulated by the Monte Carlo method. Growth is carried…”
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Effect of interaction in the Ga–As–O system on the morphology of a GaAs surface during molecular-beam epitaxy
Published in Physics of the solid state (01-05-2016)“…A thermodynamic analysis of processes of interphase interaction in the Ga–As–O system has been performed and their theoretical laws have been determined,…”
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Density functional theory study of In wetting layer formation during droplet epitaxy growth of InAs/AlGaAs quantum dots
Published in 2024 International Conference Laser Optics (ICLO) (01-07-2024)“…In this work we study In wetting layer formation during droplet epitaxy of InAs QDs with goal of explaining anomalous behavior where increase in content of…”
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Conference Proceeding -
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Methods of using a digital computer to calculate the heat-transfer coefficients of periodic heat exchangers
Published in Journal of Engineering Physics (01-03-1969)Get full text
Journal Article