Search Results - "Balakirev, S. V."

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  1. 1

    Study of Nanoscale Profiling Modes of GaAs Epitaxial Structures by Focused Ion Beams by Lisitsyn, S. A., Balakirev, S. V., Avilov, V. I., Kolomiytsev, A. S., Klimin, V. S., Solodovnik, M. S., Konoplev, B. G., Ageev, O. A.

    Published in Nanotechnologies in Russia (2018)
    “…The nanoscale profiling modes of epitaxial GaAs layers are experimentally studied through focused ion beams (FIB). The regularities of the influence of ion…”
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    Journal Article
  2. 2

    Monte Carlo investigation of the influence of V/III flux ratio on GaAs/GaAs(001) submonolayer epitaxy by Ageev, O. A., Solodovnik, M. S., Balakirev, S. V., Mikhaylin, I. A.

    Published in Technical physics (01-07-2016)
    “…The influence of the V/III flux ratio on the submonolayer growth of GaAs on the GaAs (001) surface is simulated by the Monte Carlo method. Growth is carried…”
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    Journal Article
  3. 3

    Effect of interaction in the Ga–As–O system on the morphology of a GaAs surface during molecular-beam epitaxy by Ageev, O. A., Balakirev, S. V., Solodovnik, M. S., Eremenko, M. M.

    Published in Physics of the solid state (01-05-2016)
    “…A thermodynamic analysis of processes of interphase interaction in the Ga–As–O system has been performed and their theoretical laws have been determined,…”
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    Journal Article
  4. 4

    Density functional theory study of In wetting layer formation during droplet epitaxy growth of InAs/AlGaAs quantum dots by Dukhan, D. D., Balakirev, S. V., Solodovnik, M. S.

    “…In this work we study In wetting layer formation during droplet epitaxy of InAs QDs with goal of explaining anomalous behavior where increase in content of…”
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    Conference Proceeding
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