Search Results - "Baladés, N."

Analysis of Bi Distribution in Epitaxial GaAsBi by Aberration-Corrected HAADF-STEM by Baladés, N., Sales, D. L., Herrera, M., Tan, C. H., Liu, Y., Richards, R. D., Molina, S. I.

“…The Bi content in GaAs/GaAs 1 −  x Bi x /GaAs heterostructures grown by molecular beam epitaxy at a substrate temperature close to 340 °C is investigated by…”
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Influence of the crosstalk on the intensity of HAADF‐STEM images of quaternary semiconductor materials by BALADÉS, N., HERRERA, M., SALES, D.L., GUERRERO, M.P., GUERRERO, E., GALINDO, P.L., MOLINA, S.I.

“…Summary The influence of the neighbouring atomic‐columns in determining the composition at atomic column scale of quaternary semiconductor compounds, using…”
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Effect of annealing on the compositional modulation of InAlAsSb by Baladés, N., Sales, D.L., Herrera, M., Delgado, F.J., González, M., Clark, K., Pinsunkajana, P., Hoven, N., Hubbard, S., Tomasulo, S., Walters, J.R., Molina, S.I.

“…•A post-growth annealing under As overpressure over 500°C for several minutes induces a blue-shift in the InAlAsSb emission.•TEM analysis evidences that the…”
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Structural characterization of InAlAsSb/InGaAs/InP heterostructures for solar cells by Baladés, N., Herrera, M., Sales, David L., Delgado, F.J., Hernández-Maldonado, D., Ramasse, Q.M., Pizarro, J., Galindo, P., González, M., Abell, J., Tomasulo, S., Walters, J.R., Molina, S.I.

“…•The red shift in the photoluminescence emission of InAlAsSb layers is due to small and gradual compositional fluctuations, rather than in the form of…”
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