Search Results - "Bakry, Assem"

Doping effects on the optical properties of evaporated a-Si:H films by Bakry, Assem M, El-Naggar, Ahmed H

“…Thin films of a-Si:H are deposited on substrates at 300°C by a conventional thermal evaporation technique. The electrical conductivity of these films is…”
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Synthesis and characterization of high-sensitivity Dy,Eu co-doped CaSO 4 thermoluminescent phosphor using coprecipitation technique by Mohamed, Salwa, Salama, Elsayed, Alazab, Huda A, Bakry, Assem, Sharma, Archana, Assran, Yasser

“…In this work, (99 - x)CaSO -Dy O -xEu O , (where x = 0, 0.05, 0.1, 0.2, 0.3, 0.4, 0.5) thermoluminescence phosphors were prepared using a coprecipitation…”
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Synthesis and characterization of high‐sensitivity Dy,Eu co‐doped CaSO4 thermoluminescent phosphor using coprecipitation technique by Mohamed, Salwa, Salama, Elsayed, Alazab, Huda A., Bakry, Assem, Sharma, Archana, Assran, Yasser

“…In this work, (99 − x)CaSO4‐Dy2O3–xEu2O3, (where x = 0, 0.05, 0.1, 0.2, 0.3, 0.4, 0.5) thermoluminescence phosphors were prepared using a coprecipitation…”
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Correlation between phosphorus concentration and opto-electrical properties of doped a-Si:H films by Bakry, Assem, El-Naggar, Ahmed M.

“…Phosphorus doped hydrogenated amorphous silicon (a-Si:H) films were prepared by decomposition of silane using RF plasma glow discharge. Both DC dark…”
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A new method to analyze closely spaced deep defect levels caused by multiexponential transients by Bakry, Assem

“…A new method is presented to analyze nonexponential capacitance transients, caused by closely-spaced deep defect levels active at the same temperature range,…”
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Local field correction as a cause for the optical parameters change with thickness in Ge-Se-Te films by Bakry, Assem, El-Korashy, Amer

“…Thin films of Ge 30 Se 50 Te 20 with thickness of 100, 150, 200 and 250 nm were prepared by thermal evaporation technique on glass substrates. Normal-incidence…”
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Deep level defects in n- and p-type Fe implanted InP by Bakry, Assem M., Darweesh, Salah

“…Deep level transient spectroscopy (DLTS) measurements had been performed on n- and p-type Fe implanted InP crystals. A majority carrier trap of activation…”
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