Search Results - "Baklanov, M.R."

Effect of pressure on efficiency of UV curing of CVD-derived low- k material at different wavelengths by Prager, L., Marsik, P., Wennrich, L., Baklanov, M.R., Naumov, S., Pistol, L., Schneider, D., Gerlach, J.W., Verdonck, P., Buchmeiser, M.R.

“…Low- k dielectrics prepared by CVD in the form of 200 nm thick layers on Si wafers were thermally treated at 410 °C and irradiated using UV lamps emitting…”
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Chemisorption of ALD precursors in and on porous low-k films by Verdonck, P., Delabie, A., Swerts, J., Farrell, L., Baklanov, M.R., Tielens, H., Van Besien, E., Witters, T., Nyns, L., Van Elshocht, S.

“…Schematic representation of the mechanism of formation of HfO2 in and on the porous film. Atomic layer deposition is a promising technique to deposit…”
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Impact of wavelength of UV light and UV cure time on chemical and mechanical properties of PECVD deposited porous ultra low-k films by Godavarthi, S., Le, Q.T., Verdonck, P., Mardani, S., Vanstreels, K., Van Besien, E., Baklanov, M.R.

“…[Display omitted] ► Ultra low-k films have been fabricated with a dielectric constant of approximately 2.0, E of approximately 5GPa. ► These films had an…”
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Challenges in the implementation of low-k dielectrics in the back-end of line by Hoofman, R.J.O.M., Verheijden, G.J.A.M., Michelon, J., Iacopi, F., Travaly, Y., Baklanov, M.R., Tökei, Zs, Beyer, G.P.

“…The introduction of ultra low-k materials in copper technology has been much slower than anticipated in the ITRS Roadmap. The introduction of porosity in low-k…”
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Comparative study of PECVD SiOCH low-k films obtained at different deposition conditions by Shamiryan, D, Weidner, K, Gray, W.D, Baklanov, M.R, Vanhaelemeersch, S, Maex, K

“…Four CVD SiOCH films deposited at various conditions were used for comparative evaluation. The films were evaluated by RBS, spectroscopic ellipsometry, and…”
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Benzene bridged hybrid organosilicate films with improved stiffness and small pore size by Rezvanov, A.A., Vishnevskiy, A.S., Seregin, D.S., Schneider, D., Lomov, A.A., Vorotilov, K.A., Baklanov, M.R.

“…Critical properties of porous periodic mesoporous silica (PMO) low-k dielectric with a different ratio of benzene bridges and methyl terminal groups are…”
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A detailed ellipsometric porosimetry and positron annihilation spectroscopy study of porous organosilicate-glass films with various ratios of methyl terminal and ethylene bridging groups by Rasadujjaman, M., Wang, Y., Zhang, L., Naumov, S., Attallah, A.G., Liedke, M.O., Koehler, N., Redzheb, M., Vishnevskiy, A.S., Seregin, D.S., Wu, Y., Zhang, J., Leu, J., Wagner, A., Vorotilov, K.A., Schulz, S.E., Baklanov, M.R.

“…Organosilicate-glass films with a varying ratio of terminal methyl and bridging ethylene groups are synthesized using…”
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Corrigendum to “A detailed ellipsometric porosimetry and positron annihilation spectroscopy study of porous organosilicate-glass films with various ratios of methyl terminal and ethylene bridging groups” [Microporous Mesoporous Mater. 306 (2020) 110434] by Rasadujjaman, M., Wang, Y., Zhang, L., Naumov, S., Attallah, A.G., Liedke, M.O., Koehler, N., Redzheb, M., Vishnevskiy, A.S., Seregin, D.S., Wu, Y., Zhang, J., Leu, J., Wagner, A., Vorotilov, K.A., Schulz, S.E., Baklanov, M.R.

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Magnetic field-induced dissipation-free state in superconducting nanostructures by Córdoba, R., Baturina, T. I., Sesé, J., Yu Mironov, A., De Teresa, J. M., Ibarra, M. R., Nasimov, D. A., Gutakovskii, A. K., Latyshev, A. V., Guillamón, I., Suderow, H., Vieira, S., Baklanov, M. R., Palacios, J. J., Vinokur, V. M.

“…A superconductor in a magnetic field acquires a finite electrical resistance caused by vortex motion. A quest to immobilize vortices and recover zero…”
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Effect of the C-bridge on UV properties of organosilicate films by Seregin, D.S., Naumov, S., Chang, W.-Y., Wu, Y.-H., Wang, Y., Kotova, N.M., Vishnevskiy, A.S., Wei, S., Zhang, J., Vorotilov, K.A., Redzheb, M., Leu, J., Baklanov, M.R.

“…Carbon-bridged organosilicate films deposited by using different precursors are studied by both experimentally and theoretically. It is shown that…”
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Effect of water content on the structural properties of porous methyl-modified silicate films by Vishnevskiy, A. S., Seregin, D. S., Vorotilov, K. A., Sigov, A. S., Mogilnikov, K. P., Baklanov, M. R.

“…Effect of water content in the film-forming solutions on the structure and properties of porous methyl-modified silicate films prepared by acid co-hydrolysis…”
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UV cure of oxycarbosilane low-k films by Redzheb, M., Prager, L., Krishtab, M., Armini, S., Vanstreels, K., Franquet, A., Van Der Voort, P., Baklanov, M.R.

“…Advanced spin-on k≈2.3 films with ~40% porosity were enabled by liquid phase self-assembly (LPSA) mechanism on Si substrates. The as-deposited films were…”
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Study of porogen removal by atomic hydrogen generated by hot wire chemical vapor deposition for the fabrication of advanced low-k thin films by Godavarthi, S., Wang, C., Verdonck, P., Matsumoto, Y., Koudriavtsev, I., Dutt, A., Tielens, H., Baklanov, M.R.

“…In order to obtain low-k dielectric films, a subtractive technique, which removes sacrificial porogens from a hydrogenated silicon oxycarbide (SiOC:H) film,…”
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Active species in porous media: Random walk and capture in traps by Arkhincheev, V.E., Kunnen, E., Baklanov, M.R.

“…The random walk and capture of active species responsible for various processing modifications of porous low dielectric constant materials is studied. It is…”
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Improvement of cohesion strength in ULK OSG materials by pore structure adjustment by Krishtab, M., Vanstreels, K., Savage, T., Matsunaga, K., De Gendt, S., Baklanov, M.R.

“…[Display omitted] •Dependence of cohesion strength on pore size in low-k dielectrics was studied.•4-Point-bonding test was used to evaluate cohesion strength…”
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Non-destructive characterisation of porous low-k dielectric films by Baklanov, M.R., Mogilnikov, K.P.

“…Characterization of pore structure is needed to develop and optimize low-k dielectric films and processes. Advanced non-destructive methods, such as…”
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Electron spin resonance study of defects in low- κ oxide insulators ( κ = 2.5–2.0) by Afanas’ev, V.V., Keunen, K., Stesmans, A., Jivanescu, M., Tőkei, Zs, Baklanov, M.R., Beyer, G.P.

“…[Display omitted] ► Low-κ insulators show defects typical for O-enrichment. ► Concentration of carbon-related defects is thickness-dependent. ► Ion sputtering…”
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Diffusion of solvents in thin porous films by Shamiryan, D., Baklanov, M.R., Lyons, P., Beckx, S., Boullart, W., Maex, K.

“…Porous films are used nowadays as dielectrics with low dielectric constant (so-called low- k dielectrics). Knowing the porous structure of such films is…”
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Electron spin resonance analysis of sputtering-induced defects in advanced low-κ insulators (κ=2.0–2.5) by Stesmans, A., Nguyen, A.P.D., Houssa, M., Afanas’ev, V.V., Tőkei, Zs, Baklanov, M.R.

“…[Display omitted] •We have carried out a low-temperature ESR study of damage induced by RF ion sputtering in dielectrics.•The studied materials are three types…”
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Integrated diffusion–recombination model for describing the logarithmic time dependence of plasma damage in porous low- k materials by Kunnen, E., Barkema, G.T., Maes, C., Shamiryan, D., Urbanowicz, A., Struyf, H., Baklanov, M.R.

“…This work proposes an extended model that describes the propagation of damage in porous low- k material exposed to a plasma. Recent work has indicated that…”
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