Search Results - "Bakhvalov, K. V."

High-Power CW InGaAs/AlGaAs (1070 nm) Lasers with a Broadened Lateral Waveguide of the Mesa-Stripe Design by Shashkin, I. S., Leshko, A. Yu, Shamakhov, V. V., Voronkova, N. V., Kapitonov, V. A., Bakhvalov, K. V., Slipchenko, S. O., Pikhtin, N. A., Kop’ev, P. S.

“…Semiconductor lasers with a 10-μm-wide lateral mesa-stripe waveguide are developed, and their radiative characteristics are studied. It is shown that the…”
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Light Characteristics of Narrow-Stripe High-Power Semiconductor Lasers (1060 nm) Based on Asymmetric AlGaAs/GaAs Heterostructures with a Broad Waveguide by Shashkin, I. S., Leshko, A. Y., Nikolaev, D. N., Shamakhov, V. V., Rudova, N. A., Bakhvalov, K. V., Lutetskiy, A. V., Kapitonov, V. A., Zolotarev, V. V., Slipchenko, S. O., Pikhtin, N. A., Kop’ev, P. S.

“…The emission characteristics of narrow mesa-stripe (5 . 5 μm) lasers based on asymmetric AlGaAs/GaAs heterostructures are studied. It is shown that the maximum…”
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High-Power Multimode Laser Diodes (λ = 976 nm) Based on Asymmetric Heterostructures with a Broadened Waveguide and Reduced Vertical Divergence by Slipchenko, S. O., Podoskin, A. A., Nikolaev, D. N., Shamakhov, V. V., Shashkin, I. S., Kondratov, M. I., Gordeev, I. N., Grishin, A. E., Kazakova, A. E., Gavrina, P. S., Bakhvalov, K. V., Kop’ev, P. S., Pikhtin, N. A.

“…The effect of the active region design on the vertical far-field divergence is studied for high-power laser diodes based on asymmetric heterostructures with a…”
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Single-Mode Lasers (1050 nm) of Mesa-Stripe Design Based on an AlGaAs/GaAs Heterostructure with an Ultra-Narrow Waveguide by Shashkin, I. S., Leshko, A. Y., Nikolaev, D. N., Shamakhov, V. V., Veselov, D. A., Rudova, N. A., Bakhvalov, K. V., Zolotarev, V. V., Slipchenko, S. O., Pikhtin, N. A., Kop’ev, P. S.

“…The emission characteristics of single-mode lasers based on an AlGaAs/GaAs heterostructure with an ultra-narrow waveguide are studied. It is shown that using…”
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Output Optical Power Dynamics of Semiconductor Lasers (1070 nm) with a Few-Mode Lateral Waveguide of Mesa-Stripe Design at Ultrahigh Drive Currents by Shashkin, I. S., Leshko, A. Yu, Shamakhov, V. V., Romanovich, D. N., Kapitonov, V. A., Bakhvalov, K. V., Slipchenko, S. O., Pikhtin, N. A., Kop’ev, P. S.

“…Characteristics of semiconductor lasers based on asymmetric heterostructures with broadened lateral waveguide of mesa-stripe design have been studied at…”
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Study of the pulse characteristics of semiconductor lasers with a broadened waveguide at low temperatures (110–120 K) by Veselov, D. A., Shashkin, I. S., Bobretsova, Yu. K., Bakhvalov, K. V., Lutetskiy, A. V., Kapitonov, V. A., Pikhtin, N. A., Slipchenko, S. O., Sokolova, Z. N., Tarasov, I. S.

“…Pulse-pumped MOVPE-fabricated (metal-organic vapor-phase epitaxy) semiconductor lasers emitting in the spectral ranges 1000–1100 and 1400–1600 nm at…”
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On the problem of internal optical loss and current leakage in laser heterostructures based on AlGaInAs/InP solid solutions by Veselov, D. A., Shashkin, I. S., Bakhvalov, K. V., Lyutetskiy, A. V., Pikhtin, N. A., Rastegaeva, M. G., Slipchenko, S. O., Bechvay, E. A., Strelets, V. A., Shamakhov, V. V., Tarasov, I. S.

“…Semiconductor lasers based on MOCVD-grown AlGaInAs/InP separate-confinement heterostructures are studied. It is shown that raising only the energy-gap width of…”
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Theoretical analysis of spatial current turn-on dynamics in high-power AlGaAs/GaAs laser-thyristors with an optical feedback by Soboleva, O. S., Yuferev, V. S., Podoskin, A. A., Gavrina, P. S., Romanovich, D. N., Bakhvalov, K. V., Strelets, V. A., Slipchenko, S. O., Pikhtin, N. A.

“…A numerical study of laser-thyristors spatial current turn-on dynamics is carried out. It is shown that the presence of optical feedback can reduce the maximum…”
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Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers by Sokolova, Z. N., Bakhvalov, K. V., Lyutetskiy, A. V., Pikhtin, N. A., Tarasov, I. S., Asryan, L. V.

“…Three laser structures with a single strained InGaAs quantum well of different depths and a GaAs or Al 0.1 Ga 0.9 As waveguide region are grown by…”
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Laser-diode bars based on AlGaAsP/GaAs heterostructures emitting at a wavelength of 850 nm by Shamakhov, V. V., Nikolaev, D. N., Lyutetskiy, A. V., Bakhvalov, K. V., Rastegaeva, M. G., Slipchenko, S. O., Pikhtin, N. A., Tarasov, I. S.

“…Two types of laser heterostructures, i.e., those without internal mechanical stress compensation, with AlGaAs-alloy emitter and waveguide layers (type 1), and…”
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850-nm diode lasers with different ways of compensating for internal mechanical stresses in an AlGaAs:P/GaAs heterostructure by Vinokurov, D. A., Lyutetskiy, A. V., Nikolaev, D. N., Shamakhov, V. V., Bakhvalov, K. V., Vasylyeva, V. V., Vavilova, L. S., Rastegaeva, M. G., Tarasov, I. S.

“…MOS hydride epitaxy is used to grow AlGaAs/GaAs heterostructures both without compensation and with compensation for internal mechanical stresses by the…”
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Semiconductor lasers with internal wavelength selection by Zolotarev, V. V., Leshko, A. Yu, Lyutetskii, A. V., Nikolaev, D. N., Pikhtin, N. A., Podoskin, A. A., Slipchenko, S. O., Sokolova, Z. N., Shamakhov, V. V., Arsent’ev, I. N., Vavilova, L. S., Bakhvalov, K. V., Tarasov, I. S.

“…Laser diodes with a deep built-in trapezoidal large-period diffraction grating have been developed on the basis of InGaAs/GaAs/AlGaAs heterostructures. The…”
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Temperature dependence of the threshold current density in semiconductor lasers (λ = 1050–1070 nm) by Shashkin, I. S., Vinokurov, D. A., Lyutetskiy, A. V., Nikolaev, D. N., Pikhtin, N. A., Rudova, N. A., Sokolova, Z. N., Slipchenko, S. O., Stankevich, A. L., Shamakhov, V. V., Veselov, D. A., Bakhvalov, K. V., Tarasov, I. S.

“…The temperature dependences of the threshold current density and threshold concentration in semiconductor lasers based on MOVPE-grown asymmetric…”
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Near field dynamics of a 1060 nm single-mode laser diode based on InGaAs/AlGaAs/GaAs by Shashkin, I.S., Leshko, A.Yu, Nikolaev, D.N., Shamakhov, V.V., Rudova, N.A., Bakhvalov, K.V., Lutetskiy, A.V., Kapitonov, V.A., Zolotarev, V.V., Strelets, V.A., Slipchenko, S.O., Pikhtin, N.A., Kop'ev, P.S.

“…Near field dynamics of a single-mode laser diode (λ= 1060 nm) based on InGaAs/AlGaAs/GaAs is studied. A narrow-stripe laser diode with a straight ridge of…”
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Closed mode structures in large rectangular closed resonators based on AlGaAs/GaAs heterostructures by Romanovich, D.N., Slipchenko, S.O., Podoskin, A.A., Shashkin, I.S., Golovin, V.S., Bakhvalov, K.V., Nikolaev, D.N., Rastegaeva, M.G., Pikhtin, N.A.

“…The study considers mode structure formation in large size planar rectangular cavities. Cavity samples with cleaved edges were based on AlGaAs/GaAs QW laser…”
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