Search Results - "Bahir, G."

Persistent photocurrent and surface trapping in GaN Schottky ultraviolet detectors by Katz, O., Bahir, G., Salzman, J.

“…GaN-based Schottky detectors were implemented and their photoresponse as a function of the incident power and time was measured. The measured photoresponse…”
Get full text

Gain mechanism in GaN Schottky ultraviolet detectors by Katz, O., Garber, V., Meyler, B., Bahir, G., Salzman, J.

“…Schottky barrier GaN ultraviolet detectors, both in vertical and in lateral configuration, as well as in a metal–semiconductor–metal geometry were implemented…”
Get full text

Formation of InAs self-assembled quantum rings on InP by Raz, T., Ritter, D., Bahir, G.

“…Shape transformations of partially capped self-assembled InAs quantum dots grown on InP are studied. Atomic force microscopy images show large anisotropic…”
Get full text

Near infrared quantum cascade detector in GaN∕AlGaN∕AlN heterostructures by Vardi, A., Bahir, G., Guillot, F., Bougerol, C., Monroy, E., Schacham, S. E., Tchernycheva, M., Julien, F. H.

“…A quantum cascade detector in the GaN/AlGaN/AlN material system was implemented. The design takes advantage of the large internal field existing in the…”
Get full text

GaN/AlGaN intersubband optoelectronic devices by Machhadani, H, Kandaswamy, P, Sakr, S, Vardi, A, Wirtmüller, A, Nevou, L, Guillot, F, Pozzovivo, G, Tchernycheva, M, Lupu, A, Vivien, L, Crozat, P, Warde, E, Bougerol, C, Schacham, S, Strasser, G, Bahir, G, Monroy, E, Julien, F H

Get full text

Non-polar m -plane intersubband based InGaN/(Al)GaN quantum well infrared photodetectors by Pesach, A., Gross, E., Huang, C.-Y., Lin, Y.-D., Vardi, A., Schacham, S. E., Nakamura, S., Bahir, G.

“…We demonstrate intersuband InGaN/(Al)GaN quantum well infrared photodetectors grown on a free standing non-polar m-plane GaN substrate. The devices are grown…”
Get full text

Room temperature demonstration of GaN∕AlN quantum dot intraband infrared photodetector at fiber-optics communication wavelength by Vardi, A., Akopian, N., Bahir, G., Doyennette, L., Tchernycheva, M., Nevou, L., Julien, F. H., Guillot, F., Monroy, E.

“…We fabricated a communication wavelength photodetector based on intraband transition in GaN∕AlN self-assembled quantum dot heterostructures. The quantum dot…”
Get full text

Femto-second electron transit time characterization in GaN/AlGaN quantum cascade detector at 1.5 micron by Vardi, A., Sakr, S., Mangeney, J., Kandaswamy, P. K., Monroy, E., Tchernycheva, M., Schacham, S. E., Julien, F. H., Bahir, G.

“…The ultra fast carrier dynamic in GaN/AlGaN quantum cascade detector was investigated using a time-resolved bias-lead monitoring technique. It is demonstrated…”
Get full text

Intersublevel transitions in InAs/GaAs quantum dots infrared photodetectors by Maimon, S., Finkman, E., Bahir, G., Schacham, S. E., Garcia, J. M., Petroff, P. M.

“…Thermal generation rate in quantum dots (QD) can be significantly smaller than in quantum wells, rendering a much improved signal to noise ratio. QDs infrared…”
Get full text

Electron mobility in an AlGaN/GaN two-dimensional electron gas. I. Carrier concentration dependent mobility by Katz, O., Horn, A., Bahir, G., Salzman, J.

“…The transport properties of two-dimensional electron gas (2-DEG) at the AlGaN/GaN interface were studied by characterizing the 2-DEG mobility dependence on…”
Get full text

Optical evidence for lack of polarization in ( 11 2 ¯ 0 ) oriented GaN ∕ ( AlGa ) N quantum structures by Akopian, N., Bahir, G., Gershoni, D., Craven, M. D., Speck, J. S., DenBaars, S. P.

“…We apply continuous and time resolved photoluminescence spectroscopy for studying GaN ∕ AlGaN multiquantum wells structures grown on nonpolar a -plane GaN…”
Get full text

Intersubband optics in GaN-based nanostructures - physics and applications by Tchernycheva, M., Nevou, L., Vivien, L., Julien, F. H., Kandaswamy, P. K., Monroy, E., Vardi, A., Bahir, G.

“…In this paper we review the recent achievements in terms of GaN/AlGaN‐based intersubband (ISB) physics and devices. We first discuss the design issues and in…”
Get full text

Anisotropy in detectivity of GaN Schottky ultraviolet detectors: Comparing lateral and vertical geometry by Katz, O., Garber, V., Meyler, B., Bahir, G., Salzman, J.

“…Vertical and lateral geometry GaN-based Schottky barrier photodetectors have been implemented, using similar quality material and the same fabrication process…”
Get full text

Fermi edge singularity observed in GaN/AlGaN heterointerfaces by Akopian, N., Vardi, A., Bahir, G., Garber, V., Ehrenfreund, E., Gershoni, D., Poblenz, C., Elsass, C. R., Smorchkova, I. P., Speck, J. S.

“…We observe sharp spectral lines, at energies which are higher than the bulk GaN band gap, in the photoluminescence and photoluminescence excitation spectra of…”
Get full text

Low-frequency 1/f noise and persistent transients in AlGaN-GaN HFETs by Katz, O., Bahir, G., Salzman, J.

“…Persistent photoresponse transients and low-frequency 1/f noise were measured in barrier-controlled devices such as AlGaN-GaN heterostructure field-effect…”
Get full text

The effect of strain in InP/InGaAs quantum-well infrared photodetectors on the operating wavelength by Gusakov, Y., Finkman, E., Bahir, G., Ritter, D.

“…We report on InP/InGaAs quantum-well infrared photodetectors (QWIPs) that cover the spectral range from 8 to 11 μm. The only previously reported operating…”
Get full text

Polarized front-illumination response in intraband quantum dot infrared photodetectors at 77 K by Finkman, E., Maimon, S., Immer, V., Bahir, G., Schacham, E., Fossard, F., Julien, F., Brault, J., Gendry, Michel

Get full text

Characteristics of In $_x$ Al $_1-x$ N–GaN High-Electron Mobility Field-Effect Transistor by Katz, O., Mistele, D., Meyler, B., Bahir, G., Salzman, J.

“…GaN-based field effect transistors commonly include an Al/x/Ga/1-x/N barrier layer for confinement of a two-dimensional electron gas (2DEG) in the barrier/GaN…”
Get full text

Rapid thermal low-pressure metal organic chemical vapor deposition of Fe-doped InP layers by Kreinin, O., Bahir, G.

“…High quality Fe-doped InP layers have been grown by means of rapid thermal low-pressure metal organic chemical vapor deposition. Trimethylindium,…”
Get full text

Characteristics of In/sub x/Al/sub 1-x/N-GaN high-electron mobility field-effect transistor by Katz, O., Mistele, D., Meyler, B., Bahir, G., Salzman, J.

“…GaN-based field effect transistors commonly include an Al/sub x/Ga/sub 1-x/N barrier layer for confinement of a two-dimensional electron gas (2DEG) in the…”
Get full text