Search Results - "Bahir, G"

Persistent photocurrent and surface trapping in GaN Schottky ultraviolet detectors by Katz, O., Bahir, G., Salzman, J.

“…GaN-based Schottky detectors were implemented and their photoresponse as a function of the incident power and time was measured. The measured photoresponse…”
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Gain mechanism in GaN Schottky ultraviolet detectors by Katz, O., Garber, V., Meyler, B., Bahir, G., Salzman, J.

“…Schottky barrier GaN ultraviolet detectors, both in vertical and in lateral configuration, as well as in a metal–semiconductor–metal geometry were implemented…”
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Formation of InAs self-assembled quantum rings on InP by Raz, T., Ritter, D., Bahir, G.

“…Shape transformations of partially capped self-assembled InAs quantum dots grown on InP are studied. Atomic force microscopy images show large anisotropic…”
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Near infrared quantum cascade detector in GaN∕AlGaN∕AlN heterostructures by Vardi, A., Bahir, G., Guillot, F., Bougerol, C., Monroy, E., Schacham, S. E., Tchernycheva, M., Julien, F. H.

“…A quantum cascade detector in the GaN/AlGaN/AlN material system was implemented. The design takes advantage of the large internal field existing in the…”
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GaN/AlGaN intersubband optoelectronic devices by Machhadani, H, Kandaswamy, P, Sakr, S, Vardi, A, Wirtmüller, A, Nevou, L, Guillot, F, Pozzovivo, G, Tchernycheva, M, Lupu, A, Vivien, L, Crozat, P, Warde, E, Bougerol, C, Schacham, S, Strasser, G, Bahir, G, Monroy, E, Julien, F H

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Non-polar m -plane intersubband based InGaN/(Al)GaN quantum well infrared photodetectors by Pesach, A., Gross, E., Huang, C.-Y., Lin, Y.-D., Vardi, A., Schacham, S. E., Nakamura, S., Bahir, G.

“…We demonstrate intersuband InGaN/(Al)GaN quantum well infrared photodetectors grown on a free standing non-polar m-plane GaN substrate. The devices are grown…”
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Room temperature demonstration of GaN∕AlN quantum dot intraband infrared photodetector at fiber-optics communication wavelength by Vardi, A., Akopian, N., Bahir, G., Doyennette, L., Tchernycheva, M., Nevou, L., Julien, F. H., Guillot, F., Monroy, E.

“…We fabricated a communication wavelength photodetector based on intraband transition in GaN∕AlN self-assembled quantum dot heterostructures. The quantum dot…”
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Femto-second electron transit time characterization in GaN/AlGaN quantum cascade detector at 1.5 micron by Vardi, A., Sakr, S., Mangeney, J., Kandaswamy, P. K., Monroy, E., Tchernycheva, M., Schacham, S. E., Julien, F. H., Bahir, G.

“…The ultra fast carrier dynamic in GaN/AlGaN quantum cascade detector was investigated using a time-resolved bias-lead monitoring technique. It is demonstrated…”
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Intersublevel transitions in InAs/GaAs quantum dots infrared photodetectors by Maimon, S., Finkman, E., Bahir, G., Schacham, S. E., Garcia, J. M., Petroff, P. M.

“…Thermal generation rate in quantum dots (QD) can be significantly smaller than in quantum wells, rendering a much improved signal to noise ratio. QDs infrared…”
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Electron mobility in an AlGaN/GaN two-dimensional electron gas. I. Carrier concentration dependent mobility by Katz, O., Horn, A., Bahir, G., Salzman, J.

“…The transport properties of two-dimensional electron gas (2-DEG) at the AlGaN/GaN interface were studied by characterizing the 2-DEG mobility dependence on…”
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Optical evidence for lack of polarization in ( 11 2 ¯ 0 ) oriented GaN ∕ ( AlGa ) N quantum structures by Akopian, N., Bahir, G., Gershoni, D., Craven, M. D., Speck, J. S., DenBaars, S. P.

“…We apply continuous and time resolved photoluminescence spectroscopy for studying GaN ∕ AlGaN multiquantum wells structures grown on nonpolar a -plane GaN…”
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Intersubband optics in GaN-based nanostructures - physics and applications by Tchernycheva, M., Nevou, L., Vivien, L., Julien, F. H., Kandaswamy, P. K., Monroy, E., Vardi, A., Bahir, G.

“…In this paper we review the recent achievements in terms of GaN/AlGaN‐based intersubband (ISB) physics and devices. We first discuss the design issues and in…”
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Anisotropy in detectivity of GaN Schottky ultraviolet detectors: Comparing lateral and vertical geometry by Katz, O., Garber, V., Meyler, B., Bahir, G., Salzman, J.

“…Vertical and lateral geometry GaN-based Schottky barrier photodetectors have been implemented, using similar quality material and the same fabrication process…”
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Fermi edge singularity observed in GaN/AlGaN heterointerfaces by Akopian, N., Vardi, A., Bahir, G., Garber, V., Ehrenfreund, E., Gershoni, D., Poblenz, C., Elsass, C. R., Smorchkova, I. P., Speck, J. S.

“…We observe sharp spectral lines, at energies which are higher than the bulk GaN band gap, in the photoluminescence and photoluminescence excitation spectra of…”
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Low-frequency 1/f noise and persistent transients in AlGaN-GaN HFETs by Katz, O., Bahir, G., Salzman, J.

“…Persistent photoresponse transients and low-frequency 1/f noise were measured in barrier-controlled devices such as AlGaN-GaN heterostructure field-effect…”
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The effect of strain in InP/InGaAs quantum-well infrared photodetectors on the operating wavelength by Gusakov, Y., Finkman, E., Bahir, G., Ritter, D.

“…We report on InP/InGaAs quantum-well infrared photodetectors (QWIPs) that cover the spectral range from 8 to 11 μm. The only previously reported operating…”
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Polarized front-illumination response in intraband quantum dot infrared photodetectors at 77 K by Finkman, E., Maimon, S., Immer, V., Bahir, G., Schacham, E., Fossard, F., Julien, F., Brault, J., Gendry, Michel

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Characteristics of In $_x$ Al $_1-x$ N–GaN High-Electron Mobility Field-Effect Transistor by Katz, O., Mistele, D., Meyler, B., Bahir, G., Salzman, J.

“…GaN-based field effect transistors commonly include an Al/x/Ga/1-x/N barrier layer for confinement of a two-dimensional electron gas (2DEG) in the barrier/GaN…”
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Rapid thermal low-pressure metal organic chemical vapor deposition of Fe-doped InP layers by Kreinin, O., Bahir, G.

“…High quality Fe-doped InP layers have been grown by means of rapid thermal low-pressure metal organic chemical vapor deposition. Trimethylindium,…”
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Characteristics of In/sub x/Al/sub 1-x/N-GaN high-electron mobility field-effect transistor by Katz, O., Mistele, D., Meyler, B., Bahir, G., Salzman, J.

“…GaN-based field effect transistors commonly include an Al/sub x/Ga/sub 1-x/N barrier layer for confinement of a two-dimensional electron gas (2DEG) in the…”
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