3D Active Edge Silicon Detector Tests With 120 GeV Muons

3D detectors with electrodes penetrating through the silicon wafer and covering the edges were tested in the SPS beam line X5 at CERN in autumn 2003. Detector parameters including efficiency, signal-to-noise ratio, and edge sensitivity were measured using a silicon telescope as a reference system. T...

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Bibliographic Details
Published in:IEEE transactions on nuclear science Vol. 56; no. 2; pp. 505 - 518
Main Authors: Da Via, C., Deile, M., Hasi, J., Kenney, C., Kok, A., Parker, S., Watts, S., Anelli, G., Avati, V., Bassetti, V., Boccone, V., Bozzo, M., Eggert, K., Ferro, F., Inyakin, A., Kaplon, J., Bahilo, J.L., Morelli, A., Niewiadomski, H., Noschis, E., Oljemark, F., Oriunno, M., Osterberg, K., Ruggiero, G., Snoeys, W., Tapprogge, S.
Format: Journal Article
Language:English
Published: New York IEEE 01-04-2009
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
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Summary:3D detectors with electrodes penetrating through the silicon wafer and covering the edges were tested in the SPS beam line X5 at CERN in autumn 2003. Detector parameters including efficiency, signal-to-noise ratio, and edge sensitivity were measured using a silicon telescope as a reference system. The measured sensitive width and the known silicon width were equal within less than 10 mum.
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ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2009.2013951