Search Results - "Bafleur, M."

Comparative study of sensitive volume and triggering criteria of SEB in 600 V planar and trench IGBTs by ZERARKA, M, AUSTIN, P, BAFLEUR, M

“…IGBT power components are more and more used in atmospheric and space applications. Thus, it is essential to study the influence of the natural radiation…”
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MOS-IGBT power devices for high-temperature operation in smart power SOI technology by Arbess, H., Bafleur, M.

“…We propose a new MOS-IGBT device with improved characteristics for high-temperature operation. It is achieved by inserting in the same LDMOS device P+…”
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Reliability of ESD protection devices designed in a 3D technology by Courivaud, B., Nolhier, N., Ferru, G., Bafleur, M., Caignet, F.

“…A 3D technology is used to design ESD protection devices. These planar bidirectional components, based on back-to-back diodes, are dedicated to first stage,…”
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Building-up of system level ESD modeling: Impact of a decoupling capacitance on ESD propagation by Monnereau, N., Caignet, F., Trémouilles, D., Nolhier, N., Bafleur, M.

“…Résumé We present a methodology for precise measurements and simulations of ESD system level stress applied to a simple printed circuit board. The impact of an…”
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On-chip measurement to analyze failure mechanisms of ICs under system level ESD stress by Caigneť, F., Nolhier, N., Bafleur, M., Wang, A., Mauran, N.

“…•System Level ESD.•On-chip measurements.•IC design. Electro Static Discharge (ESD) is one of the major causes of electronic system failures. Reliability of ICs…”
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Electrostatic discharge failure analysis of capacitive RF MEMS switches by Ruan, J., Nolhier, N., Bafleur, M., Bary, L., Coccetti, F., Lisec, T., Plana, R.

“…This paper reports on the investigation of failure mechanisms of aluminum nitride (AlN)-based capacitive RF MEMS switches. Electrostatic discharge (ESD)…”
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SEB Characterization of Commercial Power MOSFETs With Backside Laser and Heavy Ions of Different Ranges by Luu, A., Miller, F., Poirot, P., Gaillard, R., Buard, N., Carriere, T., Austin, P., Bafleur, M., Sarrabayrouse, G.

“…This paper presents a validation of the methodology based upon backside laser irradiations to characterize the sensitivity of power devices towards…”
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ESD failure signature in capacitive RF MEMS switches by Ruan, J., Papaioannou, G.J., Nolhier, N., Mauran, N., Bafleur, M., Coccetti, F., Plana, R.

“…RF MEMS are commonly known as electrostatic devices using high electric field for their actuation. They can be exposed to transient voltages in any…”
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Evaluation of the ESD performance of local protections based on SCR or bi-SCR with dynamic or static trigger circuit in 32 nm by Bourgeat, J., Entringer, C., Galy, P., Bafleur, M., Marin-Cudraz, D.

“…The reliability of electronic devices against electrostatic discharge stresses is still a severe challenge, particularly for deep sub-micron technologies such…”
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Analytical description of the injection ratio of self-biased bipolar transistors under the very high injection conditions of ESD events by Gendron, A., Renaud, P., Bafleur, M., Nolhier, N.

“…This paper proposes a 1D-analytical description of the injection ratio of a self-biased bipolar transistor under very high current injection conditions…”
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Failure mechanisms of discrete protection device subjected to repetitive electrostatic discharges (ESD) by Diatta, M., Bouyssou, E., Trémouilles, D., Martinez, P., Roqueta, F., Ory, O., Bafleur, M.

“…High reliability electronic devices need to sustain thousands of electrostatic discharge (ESD) stresses during their lifetime. In this paper, it is…”
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Transient voltage overshoots of high voltage ESD protections based on bipolar transistors in smart power technology by Delmas, A, Gendron, A, Bafleur, M, Nolhier, N, Gill, C

“…Transient voltage overshoots of a high voltage (20 V) ESD clamp based on bipolar transistors in a smart power technology are studied using different TLP pulse…”
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Application of various optical techniques for ESD defect localization by Essely, F., Darracq, F., Pouget, V., Remmach, M., Beaudoin, F., Guitard, N., Bafleur, M., Perdu, P., Touboul, A., Lewis, D.

“…Various optical defect localization techniques are applied on the same integrated circuits (IC). These circuits were previously stressed by Electro Static…”
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Latch-up ring design guidelines to improve electrostatic discharge (ESD) protection scheme efficiency by Tremouilles, D., Bafleur, M., Bertrand, G., Nolhier, N., Mauran, N., Lescouzeres, L.

“…In this paper, we show how latch-up guard rings, surrounding electrostatic discharges (ESD) protection devices, can reduce the overall performance of the ESD…”
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Analysis and compact modeling of a vertical grounded-base n-p-n bipolar transistor used as ESD protection in a smart power technology by Bertrand, G., Delage, C., Bafleur, M., Nolhier, N., Dorkel, J.-M., Nguyen, Q., Mauran, N., Tremouilles, D., Perdu, P.

“…A thorough analysis of the physical mechanisms involved in a vertical grounded-base n-p-n bipolar transistor (VGBNPN) under electrostatic discharge (ESD)…”
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Long-term reliability of silicon bipolar transistors subjected to low constraints by Crosson, A., Escotte, L., Bafleur, M., Talbourdet, D., Crétinon, L., Perdu, P., Perez, G.

“…We present in this study the effect of electrical ageing on silicon (Si) NPN bipolar transistors. This study is based on a sample of half-hundred components,…”
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Identification of the physical signatures of CDM induced latent defects into a DC–DC converter using low frequency noise measurements by Gao, Y., Guitard, N., Salamero, C., Bafleur, M., Bary, L., Escotte, L., Gueulle, P., Lescouzeres, L.

“…In this paper, it is demonstrated that low frequency noise measurements are an efficient tool for the detection of latent defects induced by CDM stress in a…”
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Backside Localization of Current Leakage Faults Using Thermal Laser Stimulation by Desplats, R., Beaudoin, F., Perdu, P., Poirier, P., Tremouilles, D., Bafleur, M., Lewis, D.

“…Thermal laser stimulation (OBIRCH, TIVA) is shown to be a valuable method for localizing current leakage from the front or backside of the silicon die. Its…”
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Study of the ESD defects impact on ICs reliability by ESSELY, F, BESTORY, C, GUITARD, N, BAFLEUR, M, WISLEZ, A, DOCHE, E, PERDU, P, TOUBOUL, A, LEWIS, D

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Different Failure signatures of multiple TLP and HBM Stresses in an ESD robust protection structure by Guitard, N., Essely, F., Trémouilles, D., Bafleur, M., Nolhier, N., Perdu, P., Touboul, A., Pouget, V., Lewis, D.

“…The failure signatures of a grounded-base NPN bipolar ESD protection under multiple TLP and HBM stresses are analyzed. For this particular device having a…”
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