Search Results - "Baets, R.G.F."

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  1. 1

    Advanced modeling of distortion effects in bipolar transistors using the Mextram model by De Vreede, N., De Graaff, H.C., Mouthaan, K., De Kok, M., Tauritz, J.L., Baets, R.G.F.

    Published in IEEE journal of solid-state circuits (01-01-1996)
    “…The modeling of distortion effects in bipolar transistors due to the onset of quasi-saturation is considered. Computational results obtained using the Mextram…”
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    Journal Article
  2. 2

    Extension of the collector charge description for compact bipolar epilayer models by de Vreede, L.C.N., de Graaff, H.C., Tauritz, J.L., Baets, R.G.F.

    Published in IEEE transactions on electron devices (01-01-1998)
    “…In this paper, an extension to the collector charge description for compact bipolar epilayer models is presented. With this extension, monotonic f/sub T/ and…”
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    Journal Article
  3. 3

    A figure of merit for the high-frequency noise behavior of bipolar transistors by de Vreede, L.C.N., de Graaff, H.C., Hurkx, G.A.M., Tauritz, J.L., Baets, R.G.F.

    Published in IEEE journal of solid-state circuits (01-10-1994)
    “…In this paper a new figure of merit for high frequency noise behavior for use in the evaluation and development of bipolar silicon process technology is…”
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    Journal Article
  4. 4

    A high gain silicon AGC amplifier with a 3 dB bandwidth of 4 GHz by de Vreede, L.C.N., Dambrine, A.C., Tauritz, J.L., Baets, R.G.F.

    “…In this paper, the design and realization of an integrated high frequency AGC amplifier in BiCMOS technology are discussed. The amplifier has 36 dB voltage…”
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    Journal Article
  5. 5

    Narrow X-band tunable MMIC filters employing active resonators as local feedback by Van Vliet, F.E., Tauritz, J.L., Van Den Bognaart, F.L.M., Baets, R.G.F.

    “…Monolithic microwave active inductors have been used to realize very narrow X-band tunable filters. The active inductors were used in local feedback…”
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    Conference Proceeding
  6. 6

    Extension of the collector charge description for compact bipolar epilayer models by de Vreede, L.C.N., de Graaff, H.C., Tauritz, J.L., Baets, R.G.F.

    “…In this paper an extension to the collector charge description for compact bipolar epilayer models is presented. With the aid of this extension, monotonic f T…”
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    Conference Proceeding
  7. 7

    Systematic analysis, synthesis and realization of monolithic microwave active inductors by Van Vliet, F.E., Van Den Bogaart, F.L.M., Tauritz, J.L., Baets, R.G.F.

    “…A unified analysis of monolithic microwave active inductors based on an amplifier-feedback topological description is introduced. Active inductors are…”
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    Conference Proceeding
  8. 8

    Suspended membrane inductors and capacitors for application in silicon MMIC's by Sun, Y., Van Zejl, H., Tauritz, J.L., Baets, R.G.F.

    “…This paper considers the fabrication and modelling of suspended membrane inductors and capacitors on ordinary silicon substrates. A single post-processing…”
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    Conference Proceeding
  9. 9

    Silicon monolithic balanced oscillators using on-chip suspended active resonators by Sun, Y., Tauritz, J.L., Baets, R.G.F.

    “…Silicon microwave monolithic balanced oscillators using suspended active resonators realized in a f/sub T/=15 GHz BJT process are presented. These…”
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    Conference Proceeding
  10. 10

    Compact low loss 8/spl times/10 GHz polarisation independent WDM receiver by Steenbergen, C.A.M., Van Dam, C., Looijen, A., Herben, C.G.P., De Kok, M., Smit, M.K., Pedersen, J.W., Moerman, I., Baets, R.G.F., Verbeek, B.H.

    “…In this paper we present an 8 channel polarisation independent phased array demultiplexer monolithically integrated with photodetectors. The bandwidth of the…”
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    Conference Proceeding
  11. 11

    Monolithic narrow-band active inductors using suspended membrane passive components on silicon substrate by Sun, Y., van Vliet, F.E., Tauritz, J.L., Baets, R.G.F.

    Published in Proceedings of EDMO '96 (1996)
    “…In this paper 8.8 GHz monolithic narrow-band active inductors based on the DIMES-03 silicon bipolar process are reported. Substrate losses have been reduced…”
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    Conference Proceeding
  12. 12

    Advanced modelling of distortion effects in bipolar transistors using the Mextram model by de Vreede, L.C.N., de Graaff, H.C., Mouthaan, K., de Kok, M., Tauritz, J.L., Baets, R.G.F.

    “…Modelling of distortion effects in bipolar transistors due to the onset of quasi saturation is considered. Computational results obtained using Mextram and…”
    Get full text
    Conference Proceeding