Search Results - "Baechtold, W."

Spatially resolved water content profiles from inverted time domain reflectometry signals by Oswald, B., Benedickter, H. R., Bächtold, W., Flühler, H.

“…We present a method for extracting spatially resolved water content profiles θ(x) from a two‐wire time domain reflectometry (TDR) probe. The profile θ(x) is…”
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2-D VCSEL model for investigation of dynamic fiber coupling and spatially filtered noise by Jungo, M., Erni, D., Baechtold, W.

“…We propose a set of transformed two-dimensional (2-D) rate equations, which allow the computation of dynamic gain competition resulting from inhomogeneous…”
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Alternative formulation of carrier transport in spatially-dependent laser rate equations by JUNGO, M, ERNI, D, BAECHTOLD, W

“…The level of accuracy of the conventional implementation of carrier transport into the quantum wells in spatially-dependent rate equations appears too high…”
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Verilog-A implementation of a 2D spatiotemporal VCSEL model for system-oriented simulations of optical links by Christen, T., Odermatt, S., Jungo, M., Erni, D., Baechtold, W.

“…An implementation of a highly efficient spatiotemporal vertical‐cavity surface‐emitting laser (VCSEL) model in the circuit simulation environment of Cadence is…”
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Fiber dispersion induced nonlinearity in fiber-optic links with multimode laser diodes by Hunziker, S., Baechtold, W.

“…In analog RF fiber-optic (FO) links with directly modulated multimode laser diodes (LD's), nonlinear distortions of the received modulation signal occur due to…”
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An active tagging system using circular polarization modulation by Kossel, M., Benedickter, H., Baechtold, W.

“…An active read/write microwave tagging system using circular polarization modulation as a novel modulation scheme for RFID systems to reduce demodulation…”
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Novel design topology for ultra low power down converters with broadband on chip matching network by Schmatz, M.L., Lott, U., Baumberger, W., Baechtold, W.

“…A novel design topology for ultra low power receivers and down converters has been developed. Using this topology, a monolithic L-band down converter…”
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Noise behavior of GaAs field-effect transistors with short gate lengths by Baechtold, W.

“…The noise behavior of the GaAs Schottky-barrier gate field-effect transistor has been investigated theoretically and experimentally. It has been found that an…”
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Author's reply to "Comments on 'noise behavior of GaAs field-effect transistors with short gate length'" by Baechtold, W.

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Dynamic effects in Josephson devices operated as logic gates by Baechtold, W.

“…The dynamic behavior of Josephson devices, in particular interferometers, is investigated with simple approximations and computer simulations. It is shown that…”
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Noise behavior of Schottky barrier gate field-effect transistors at microwave frequencies by Baechtold, W.

“…The noise behavior of a Schottky barrier gate field-effect transistor is investigated by the use of the noise equivalent circuit. The influence of the carrier…”
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X- and Ku-band amplifiers with GaAs Schottky-barriers field-effect transistors by Baechtold, W.

“…During recent years significant progress has been made in GaAs technology and the GaAs Schottky-barrier field-effect transistor now shows outstanding microwave…”
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Noise temperature in silicon in the hot electron region by Baechtold, W.

“…The noise temperature as a function of the applied field has been measured on an epitaxial silicon layer at the frequencies 2 GHz and 4 GHz. It has been found…”
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An efficient system-oriented VCSEL model including 2D modal dynamics and thermal effects by Jungo, M., Erni, D., Baechtold, W.

“…We propose a new system-oriented 2D VCSEL model, which takes into account the detailed interactions between the transverse carrier and field distributions. It…”
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Approach for developing a large signal model of a 150 GHz HEMT by Diskus, C.G., Bergamaschi, C., Schefer, M., Patrick, W., Klepser, B.-U.H., Baechtold, W.

“…In this contribution the development of a large signal model describing the electrical behaviour of an InAlAs/InGaAs/InP-HEMT will be discussed. The…”
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Depletion and enhancement mode InP high electron mobility transistors fabricated by a dry gate recess process by Cheung, R., Patrick, W., Baechtold, W.

“…We report depletion and enhancement mode InP high electron mobility transistors (HEMTs) fabricated using CH/sub 4//H/sub 2/ selective dry etch gate recess…”
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Determination of the noise source parameters in AlInAs/GaInAs HEMT heterostructures based on measured noise temperature dependence on the electric field by Bergamaschi, C., Patrick, W., Baechtold, W.

“…The noise temperature dependence on the electric field in an AlInAs/GaInAs HEMT heterostructure has been measured. It was found that the dependence of the…”
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Noise in Microwave Transistors by Baechtold, W., Strutt, M.J.O.

“…Details of noise measurement techniques in the L- and S-bands are discussed. The complete noise parameters of microwave transistors are presented in the…”
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Computerized Calculation of Small Signal and Noise Properties of Microwave Transistors by Baechtold, W., Kotyczka, W., Strutt, M.J.O.

“…The small signal and noise equivalent circuit of a microwave transistor is evaluated using an analog simulation model. The noise figure has been determined…”
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Quasi-analytic steady-state solution of VCSEL rate equations including spatial hole burning and carrier diffusion losses by Jungo, Marc, Erni, Daniel, Baechtold, Werner

“…We propose a new set of equations describing a cylindrical vertical cavity surface emitting laser (VCSEL) cavity under CW operation, based on the rate…”
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