Study of the effect of neutron damage on anodic oxidation of monocristalline silicon solar cells for the purpose of determining phosphorus concentration depth profile using neutron activation analysis

Neutron activation analysis for the determination of phosphorus concentration depth profile in monocristalline silicon solar cells, requires known thicknesses of silicon oxide grown on the irradiated silicon sample by anodic oxidation. These are then etched by an HF solution which is measured for th...

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Bibliographic Details
Published in:	Journal of non-crystalline solids Vol. 353; no. 5; pp. 645 - 647
Main Authors:	Idiri, Z., Belamri, M., Azbouche, A., Badredine, A., Chaouch, C. Lakhdar, Imadalou, M., Palahouane, B., Boumaour, M., Maallemi, A., Guediura, B.
Format:	Journal Article Conference Proceeding
Language:	English
Published:	Amsterdam Elsevier B.V 01-04-2007 Elsevier
Subjects:	Applied sciences Energy Exact sciences and technology III–V Semiconductors Natural energy Neutron activation analysis Photovoltaic conversion Photovoltaics Silicon Solar cells Solar cells. Photoelectrochemical cells Solar energy Solar cells Neutron activation analysis III–V Semiconductors 61.80.Hg Silicon 82.80.Jp 81.65.Mq 61.72.Ss 61.72.Tt 82.80.Yc Photovoltaics RBS Electrical conductivity Fluence Single crystal Solar cell Thickness Engraving Anodizing III-V Semiconductors Depth profile Radiation effect Neutron beam Concentration distribution Damaging
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Summary:	Neutron activation analysis for the determination of phosphorus concentration depth profile in monocristalline silicon solar cells, requires known thicknesses of silicon oxide grown on the irradiated silicon sample by anodic oxidation. These are then etched by an HF solution which is measured for the β radioactivity of P 32. The thickness of silicon oxide formed by anodic oxidation is known by establishing the linear calibration curve giving the thickness versus the voltage used. Neutron damage on silicon samples modify their resistivity and consequently the thicknesses of silicon oxide formed by anodic oxidation will vary according to the resistivity of irradiated silicon samples. To study this effect, samples were irradiated at different neutron doses in a 1 MW nuclear research reactor at a position where the thermal neutron flux is in the order of 10 13 n cm −2 s −1. For each dose, the resistivity of the irradiated silicon samples was measured using the four points probe method; for the doses considered a linear relationship between neutron dose and resistivity has been observed. The samples where then treated by anodic oxidisation to establish the calibration curve (thickness of silicon oxide versus voltage) for each dose and the thicknesses were measured by Rutherford backscattering with a Van de Graaf accelerator and α particles of 2 MeV. Finally, the oxide growing rate (Å/V) was determined versus the neutron fast fluence.
ISSN:	0022-3093 1873-4812
DOI:	10.1016/j.jnoncrysol.2006.10.050