Search Results - "Bachrach, R Z"

Symmetric arsenic dimers on the Si (100) surface by UHRBERG, R. I. G, BRINGANS, R. D, BACHRACH, R. Z, NORTHRUP, J. E

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Arsenic-terminated Ge(111): an ideal 1×1 surface by BRINGANS, R. D, UHRBERG, R. I. G, BACHRACH, R. Z, NORTHRUP, J. E

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Excimer-laser-induced crystallization of hydrogenated amorphous silicon by WINER, K, ANDERSON, G. B, READY, S. E, BACHRACH, R. Z, JOHNSON, R. I, PONCE, F. A, BOYCE, J. B

“…The electronic transport properties and structural morphology of fast-pulse excimer-laser- crystallized hydrogenated amorphous silicon (a-Si:H) thin films have…”
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Low temperature crystallization of amorphous silicon using an excimer laser by BACHRACH, R. Z, WINER, K, BOYCE, J. B, READY, S. E, JOHNSON, R. I, ANDERSON, G. B

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Formation of the interface between GaAs and Si: implications for GaAs-on-Si heteroepitaxy by BRINGANS, R. D, OLMSTEAD, M. A, UHRBERG, R. I. G, BACHRACH, R. Z

“…Results of photoemission core-level spectroscopy measurements for coverages of around one monolayer of As, Ga, and GaAs on Si substrates are presented. The…”
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Multiple Oxidation States of Al Observed by Photoelectron Spectroscopy of Substrate Core Level Shifts by Flodstrom, S. A., Bachrach, R. Z., Bauer, R. S., Hagström, S. B. M.

“…Substrate core chemical shifts upon chemisorption of O on Al are observed using variable-excitation-energy photoelectron spectroscopy. At low exposures a…”
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Comparison between the Electronic Structures of GaAs(111) and GaAs ( 1 ― 1 ― 1 ― ) from Angle-Resolved Photoemission by Bringans, R. D., Bachrach, R. Z.

“…Angle-resolved photoemission spectra have been measured for the polar (111) and (111) surfaces of GaAs. The results show definitively that although both faces…”
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Chemically Induced Charge Redistribution at Al-GaAs Interfaces by Brillson, L. J., Bachrach, R. Z., Bauer, R. S., McMenamin, J.

“…The Al/GaAs interface formed by evaporating increasing film Al onto cleaved GaAs(110) surfaces at room temp. in ultra-high vacuum was studied by an assortment…”
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Ordered Oxygen Overlayer Associated with Chemisorption State on Al(111) by Flodström, S. A., Martinsson, C. W. B., Bachrach, R. Z., Hagström, S. B. M., Bauer, R. S.

“…Experimental evidence is presented of an ordered chemisorption phase in the initial interaction of O with the Al(111) surface. At high O exposure or high…”
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Electronic and atomic structure of arsenic terminated Si(100) by Uhrberg, R. I. G., Bringans, R. D., Bachrach, R. Z., Northrup, John E.

“…A comparison between angle resolved photoemission data and a b i n i t i o pseudopotential calculations for a structural model of the As covered Si(100)…”
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Au and Al interface reactions with SiO2 by Bauer, R. S., Bachrach, R. Z., Brillson, L. J.

“…The chemical bonding, extent, and evolution of metal‐oxide semiconductor interface regions have been probed with soft‐x‐ray photoemission spectroscopy…”
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Electronic and atomic structure of GaAs epitaxial overlays on Si (111) by NORTHRUP, J. E, BRINGANS, R. D, UHRBERG, R. I. G, OLMSTEAD, M. A

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Atomic interdiffusion at Au-Al/GaAs interfaces by Brillson, L. J., Bauer, R. S., Bachrach, R. Z., Hasson, Goran

“…A new technique has been developed to probe metal-semiconductor interdiffusion on an atomic scale. With reacted Al atoms as markers at microscopic Au/GaAs…”
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Electronic structure, atomic structure, and the passivated nature of the arsenic-terminated Si(111) surface by UHRBERG, R. I. G, BRINGANS, R. D, OLMSTEAD, M. A, BACHRACH, R. Z, NORTHRUP, J. E

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Oxidation of Aluminum Surfaces Studied by Synchrotron Radiation Photoelectron Spectroscopy by Hagström, S B M, Bachrach, R Z, Bauer, R S, Flodström, S A

“…A review is presented of a series of electron spectroscopic measurements investigating the surface properties of aluminum by its interaction with molecular…”
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Surface bands for single-domain 2×1 reconstructed Si(100) and Si(100):As. Photoemission results for off-axis crystals by BRINGANS, R. D, UHRBERG, R. I. G, OLMSTEAD, M. A, BACHRACH, R. Z

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Model Semiconductor Surfaces: Arsenic Termination of the Ge(111), Si(111) and Si(100) Surfaces by Bringans, R D, Uhrberg, R I G, Olmstead, M A, Bachrach, R Z, Northrup, J E

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Photoemission study of bonding at the CaF2-on-Si(111) interface by OLMSTEAD, M. A, UHRBERG, R. I. G, BRINGANS, R. D, BACHRACH, R. Z

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Interface formation of GaAs with Si(100), Si(111), and Ge(111): core-level spectroscopy for monolayer coverages of GaAs, Ga, and As by BRINGANS, R. D, OLMSTEAD, M. A, UHRBERG, R. I. G, BACHRACH, R. Z

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Initial formation of the interface between a polar insulator and a nonpolar semiconductor: CaF2 on Si(111) by Olmstead, Marjorie A., Uhrberg, R. I. G., Bringans, R. D., Bachrach, R. Z.

“…The initial stages of interface formation between CaF2 and Si(111) have been studied with both core‐level and angle‐resolved valence band photoemission…”
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