Search Results - "Bachlechner, M E"
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Structural correlations at Si/Si3N4 interface and atomic stresses in Si/Si3N4 nanopixel-10 million-atom molecular dynamics simulation on parallel computers
Published in Journal of the European Ceramic Society (01-01-1999)“…Calculations of charge transfer at the Si/Si3N4 interface were combined with interaction potential models for bulk Si and Si3N4 to produce a model for the…”
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Coupling length scales for multiscale atomistics-continuum simulations: atomistically induced stress distributions in Si/Si3N4 nanopixels
Published in Physical review letters (20-08-2001)“…A hybrid molecular-dynamics (MD) and finite-element simulation approach is used to study stress distributions in silicon/silicon-nitride nanopixels. The hybrid…”
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Multiscale simulation of nanosystems
Published in Computing in science & engineering (01-07-2001)“…The authors describe simulation approaches that seamlessly combine continuum mechanics with atomistic simulations and quantum mechanics. They also discuss…”
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Large-scale atomistic modeling of nanoelectronic structures
Published in IEEE transactions on electron devices (01-10-2000)“…Large-scale molecular-dynamics simulations are performed on parallel computers to study critical issues on ultrathin dielectric films and device reliability in…”
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Multi-pair excitations in an electron liquid
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01-07-1996)“…Single (particle-hole)-pair excitations, as described in the well-known Lindhard function, are restricted to a strip in the ( q, ω) plane — the so-called…”
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Energy-loss function in the two-pair approximation for the electron liquid
Published in Physical review. B, Condensed matter (15-07-1996)Get full text
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Van Hove correlation functions in an interacting electron gas : equation-of-motion approach
Published in Physical review. B, Condensed matter (15-10-1992)Get full text
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Molecular dynamics simulations of the mechanical strength of Si/Si3N4 interfaces
Published in Physical review. B, Condensed matter and materials physics (01-09-2005)Get full text
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Stress domains in Si(111)/a-Si3N4 nanopixel: ten-million-atom molecular dynamics simulations on parallel computers
Published in Physical review letters (10-01-2000)“…Parallel molecular dynamics simulations are performed to determine atomic-level stresses in Si(111)/Si(3)N4(0001) and Si(111)/a-Si3N4 nanopixels. Compared to…”
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Multimillion-atom molecular dynamics simulation of atomic level stresses in Si(111)/Si3N4(0001) nanopixels
Published in Applied physics letters (20-04-1998)“…Ten million atom multiresolution molecular-dynamics simulations are performed on parallel computers to determine atomic-level stress distributions in a 54 nm…”
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Dislocation emission at the Silicon/Silicon nitride interface: A million atom molecular dynamics simulation on parallel computers
Published in Physical review letters (10-01-2000)“…Mechanical behavior of the Si(111)/Si(3)N4(0001) interface is studied using million atom molecular dynamics simulations. At a critical value of applied strain…”
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Van Hove correlation functions for identical fermions
Published in Physical review. B, Condensed matter (01-02-1989)Get full text
Journal Article