Search Results - "Baccus, B."

Two-dimensional simulation of local oxidation of silicon: calibrated viscoelastic flow analysis by Senez, V., Collard, D., Ferreira, P., Baccus, B.

“…Local Oxidation of Silicon (LOCOS) remains the common isolation technology for mass-production of integrated circuits. The work reported in this paper…”
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Mechanical stress analysis of an LDD MOSFET structure by Ferreira, P., Senez, V., Baccus, B.

“…This paper presents a mechanical stress study of the LDD MOSFET structure. The stresses are successively evaluated through the forming steps and topological…”
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Three-dimensional process simulation by Lorenz, J., Baccus, B., Henke, W.

“…Within the JESSI/ESPRIT project PROMPT, a program system for the multidimensional simulation of semiconductor fabrication steps is being developed. The overall…”
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Influence of the silicon nitride oxidation on the performances of NCLAD isolation by Tixier, A., Senez, V., Baccus, B., Marmiroli, A., Colpani, P., Rebora, A., Carnevale, G.P.

“…In order to study NCLAD isolation structures, a silicon nitride oxidation model has been studied and implemented in the process simulation program IMPACT-4…”
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A continuous and general model for boron diffusion during post-implant annealing including damaged and amorphizing conditions by Baccus, B., Vandenbossche, E.

“…A model is presented for boron diffusion after ion implantation. The aim is to derive a formulation valid for a large range of implantation doses and annealing…”
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A study of nonequilibrium diffusion modeling-applications to rapid thermal annealing and advanced bipolar technologies by Baccus, B., Wada, T., Shigyo, N., Norishima, M., Nakajima, H., Inou, K., Iinuma, T., Iwai, H.

“…A nonequilibrium diffusion model has been developed to study the influence of point defects on dopant redistribution, especially for transient enhanced…”
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Adaptive mesh refinement for multilayer process simulation using the finite element method by Baccus, B., Collard, D., Dubois, E.

“…An adaptive mesh refinement technique is proposed for a two-dimensional finite-element multilayer process simulator. Mesh refinement is based on the dopant…”
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High Concentration Boron Diffusion Study Using A Complete Point Defect And Dynamic Nucleation Model by Vandenbossche, E., Baccus, B.

“…The diffusion and activation of boron at high concentrations are key problems in designing ultra-shallow P + junctions. In this paper, the behavior of boron…”
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Pseudo-analytical modelling of stress dependent silicon oxidation by Collard, D., Baccus, B., Senez, V.

“…This paper proposes an alternative modelling approach for the inclusion of the stress effects in 2D local oxidation simulations. The stresses induced by the…”
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A study of the electrical performances of isolation structures by Dubois, E., Coppee, J.-L., Baccus, B., Collard, D.

“…The electrical properties of field oxide isolation structures are investigated from the device physics point of view. The importance of the potential barrier…”
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Sensitivity of PNP Doping Profiles to Annealing Conditions - Role of Dynamic Clustering Phenomena by Baccus, B., Vandenbossche, E., Monroy, A., Collard, D., Jaouen, H., Roche, M.

“…It is well-known that doping profiles of PNP transistors are extremely sensitive to the exact annealing conditions, in particular to the ramp-up procedure…”
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Implementation of nitride oxidation in the 2D process simulator IMPACT-4 by Tixier, A., Senez, V., Baccus, B., Marmiroli, A.

“…To shrink the dimension of devices, new isolation technologies, with respect to classical LOCOS, have to be evaluated. This paper deals with the study of one…”
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3-dimensional simulation of thermal diffusion and oxidation processes by Senez, V., Bozek, S., Baccus, B.

“…Within the frame of the european PROMPT project in which a multidimensional process simulation system has been developed, a new 3D process simulation program…”
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Modeling arsenic activation and diffusion during furnace and rapid thermal annealing by Vandenbossche, E., Jaouen, H., Baccus, B.

“…A model has been developed for arsenic diffusion after ion implantation and validated for a very wide range of annealing conditions including furnace and rapid…”
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Simulation of advanced field isolation using calibrated viscoelastic stress analysis by Senez, V., Collard, D., Ferreira, P., Baccus, B.

“…A physical two-dimensional modeling of the thermal oxidation of silicon has been developed based on the explicit treatment of the reaction expansion. The…”
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Electrical Performances Comparison of Semi and Fully Recessed Isolation Structures by Dubois, E., Coppee, J.-L., Baccus, B, Collard, D.

“…Electrical characteristics of semi-recessed and fully-recessed LOCOS isolation techniques are analyzed. Two-dimensional process/device simulations, performed…”
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Mechanical Stress Analysis of a LDD-MOSFET Structure by Ferreira, P., Senez, V., Baccus, B.

“…A mechanical stress analysis of the LDD-MOSFET structure is presented. It includes the cumulative effects from the oxidation, the thermal cycles and the…”
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Domain Decomposition Method Applied to 3D Finite Element Process Simulation by Herbaux, J., Brocard, D., Baccus, B., Senez, V., Bozek, S.

“…This paper presents a novel approach for solving large sparse linear system arising from 3D finite element process simulation. This new method, also called the…”
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Two-Dimensional Modelling of SILO Isolation Structures by Collard, D., Senez, V., Baccus, B.

“…This paper presents quantitative 2D stress dependent simulations of the Sealed Interface Local Oxidation (SILO) structure. In the SILO structure, the oxidation…”
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Study of Local Silicon Oxidation with Calibrated Nitride Model by Ferreira, P., Senez, V., Collard, D., Baccus, B.

“…Typical 2D effects such as oxide thinning and bird's beak size decrease with nitride masks and windows size reduction are observed in submicron isolation…”
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