Search Results - "Baboux, Nicolas"

Characterization of ferroelectric hafnium/zirconium oxide solid solutions deposited by reactive magnetron sputtering by Bouaziz, Jordan, Rojo Romeo, Pedro, Baboux, Nicolas, Vilquin, Bertrand

“…The room temperature deposition of 10 nm-thick ferroelectric hafnium/zirconium oxide, (Hf, Zr)O 2 , thin solid films is achieved with a single…”
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Interpretation of multiscale characterization techniques to assess ferroelectricity: The case of GaFeO3 by Martin, Simon, Baboux, Nicolas, Albertini, David, Gautier, Brice

“…In this paper, we propose a thorough experimental procedure to assess the ferroelectricity of thin films, and apply this procedure to Pulsed Laser Deposition…”
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Electromechanical response of amorphous LaAlO3 thin film probed by scanning probe microscopies by Borowiak, Alexis S., Baboux, Nicolas, Albertini, David, Vilquin, Bertrand, Saint Girons, Guillaume, Pelloquin, Sylvain, Gautier, Brice

“…The electromechanical response of a 3 nm thick amorphous LaAlO3 layer obtained by molecular beam epitaxy has been studied using scanning probe microscopies…”
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Dramatic impact of pressure and annealing temperature on the properties of sputtered ferroelectric HZO layers by Bouaziz, Jordan, Rojo Romeo, Pedro, Baboux, Nicolas, Negrea, Raluca, Pintilie, Lucian, Vilquin, Bertrand

“…The crystallization of ferroelectric (Hf,Zr)O2 thin films is achieved by playing on the deposition pressure during reactive magnetron sputtering from a Hf/Zr…”
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Huge gain in pyroelectric energy conversion through epitaxy for integrated self-powered nanodevices by Moalla, Rahma, Vilquin, Bertrand, Saint-Girons, Guillaume, Le Rhun, Gwenael, Defay, Emmanuel, Sebald, Gael, Baboux, Nicolas, Bachelet, Romain

“…Polycrystalline (textured) and epitaxial 500nm thick Pb(Zr0.52Ti0.48)O3 (PZT) layers have been monolithically integrated in metal-insulator-metal structure on…”
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Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering by El Hajjam, Khalil, Baboux, Nicolas, Calmon, Francis, Souifi, Abdelkader, Poncelet, Olivier, Francis, Laurent A., Ecoffey, Serge, Drouin, Dominique

“…The development of metallic single electron transistor (SET) depends on the downscaling and the electrical properties of its tunnel junctions. These tunnel…”
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Static and Dynamic Modeling of Single-Electron Memory for Circuit Simulation by Wei Xuan, Beaumont, A., Guilmain, M., Bounouar, M., Baboux, N., Etzkorn, J., Drouin, D., Calmon, F.

“…Two compact models for single-electron memory (SEM) are proposed and validated by comparisons with the program SIMON. The approach is based on the master…”
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Huge Reduction of the Wake-Up Effect in Ferroelectric HZO Thin Films by Bouaziz, Jordan, Romeo, Pedro Rojo, Baboux, Nicolas, Vilquin, Bertrand

“…The wake-up effect is a major issue for ferroelectric HfO2-based memory devices. Here, two TiN/HZO/TiN structures deposited by magnetron sputtering on silicon…”
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High Spatial Resolution Thermal Mapping of Volatile Switching in NbOx-Based Memristor Using In Situ Scanning Thermal Microscopy by Nandi, Sanjoy Kumar, Puyoo, Etienne, Nath, Shimul Kanti, Albertini, David, Baboux, Nicolas, Das, Sujan Kumar, Ratcliff, Thomas, Elliman, Robert G

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Physical Origin of Negative Differential Resistance in V3O5 and Its Application as a Solid‐State Oscillator by Das, Sujan Kumar, Nandi, Sanjoy Kumar, Marquez, Camilo Verbel, Rúa, Armando, Uenuma, Mutsunori, Puyoo, Etienne, Nath, Shimul Kanti, Albertini, David, Baboux, Nicolas, Lu, Teng, Liu, Yun, Haeger, Tobias, Heiderhoff, Ralf, Riedl, Thomas, Ratcliff, Thomas, Elliman, Robert Glen

“…Oxides that exhibit an insulator–metal transition can be used to fabricate energy‐efficient relaxation oscillators for use in hardware‐based neural networks…”
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Electrical properties of Molecular Beam Epitaxy grown Barium Titanate probed by conductive Atomic Force Microscopy by Martin, Simon, Baboux, Nicolas, Albertini, David, Gautier, Brice

“…The electrical properties of Barium Titanate 60nm thick layers grown by Molecular Beam Epitaxy has been probed at the nanoscale by Conductive-Atomic Force…”
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Biorealistic Neuronal Temperature-Sensitive Dynamics within Threshold Switching Memristors: Toward Neuromorphic Thermosensation by Bonagiri, Akhil, Das, Sujan Kumar, Marquez, Camilo Verbel, Rúa, Armando, Puyoo, Etienne, Nath, Shimul Kanti, Albertini, David, Baboux, Nicolas, Uenuma, Mutsunori, Elliman, Robert Glen, Nandi, Sanjoy Kumar

“…Neuromorphic nanoelectronic devices that can emulate the temperature-sensitive dynamics of biological neurons are of great interest for bioinspired robotics…”
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High Spatial Resolution Thermal Mapping of Volatile Switching in NbO x ‑Based Memristor Using In Situ Scanning Thermal Microscopy by Nandi, Sanjoy Kumar, Puyoo, Etienne, Nath, Shimul Kanti, Albertini, David, Baboux, Nicolas, Das, Sujan Kumar, Ratcliff, Thomas, Elliman, Robert G.

“…Temperature mapping by in situ thermoreflectance thermal imaging (TRTI) or midwave infrared spectroscopy has played an important role in understanding the…”
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Physical Origin of Negative Differential Resistance in V 3 O 5 and Its Application as a Solid-State Oscillator by Das, Sujan Kumar, Nandi, Sanjoy Kumar, Marquez, Camilo Verbel, Rúa, Armando, Uenuma, Mutsunori, Puyoo, Etienne, Nath, Shimul Kanti, Albertini, David, Baboux, Nicolas, Lu, Teng, Liu, Yun, Haeger, Tobias, Heiderhoff, Ralf, Riedl, Thomas, Ratcliff, Thomas, Elliman, Robert Glen

“…Oxides that exhibit an insulator-metal transition can be used to fabricate energy-efficient relaxation oscillators for use in hardware-based neural networks…”
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Programming multilevel crystallization states in phase-change-material thin films by Taute, Arnaud, Al-Jibouri, Sadek, Laprais, Capucine, Monfray, Stéphane, Lumeau, Julien, Moreau, Antonin, Letartre, Xavier, Baboux, Nicolas, Saint-Girons, Guillaume, Berguiga, Lotfi, Cueff, Sébastien

“…We propose and demonstrate a simple method to accurately monitor and program arbitrary states of partial crystallization in phase-change materials (PCMs). The…”
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Ferroelectricity Improvement in Ultra‐Thin Hf 0.5 Zr 0.5 O 2 Capacitors by the Insertion of a Ti Interfacial Layer by Segantini, Greta, Barhoumi, Rabei, Manchon, Benoît, Cañero Infante, Ingrid, Rojo Romeo, Pedro, Bugnet, Matthieu, Baboux, Nicolas, Nirantar, Shruti, Deleruyelle, Damien, Sriram, Sharath, Vilquin, Bertrand

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Insertion of an Ultra‐thin Interfacial Aluminium Layer for the Realisation of a Hf0.5Zr0.5O2 Ferroelectric Tunnel Junction by Manchon, Benoît, Segantini, Greta, Baboux, Nicolas, Rojo Romeo, Pedro, Barhoumi, Rabei, Drouin, Dominique, Ingrid C., Infante, Alibart, F., Vilquin, Bertrand, Deleruyelle, Damien

“…Herein, the effect of a 2 nm thin aluminum layer inserted between the ferroelectric layer and the top electrode in a TiN/Hf0.5Zr0.5O2/TiN stack deposited by…”
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Ferroelectricity Improvement in Ultra‐Thin Hf0.5Zr0.5O2 Capacitors by the Insertion of a Ti Interfacial Layer by Segantini, Greta, Barhoumi, Rabei, Manchon, Benoît, Cañero Infante, Ingrid, Rojo Romeo, Pedro, Bugnet, Matthieu, Baboux, Nicolas, Nirantar, Shruti, Deleruyelle, Damien, Sriram, Sharath, Vilquin, Bertrand

“…Ultra‐Thin Hf0.5Zr0.5O2 Capacitors Through interface engineering, Greta Segantini and co‐workers improve ferroelectricity and scalability of hafnium zirconium…”
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Reversible Single‐Pulse Laser‐Induced Phase Change of Sb 2 S 3 Thin Films: Multi‐Physics Modeling and Experimental Demonstrations by Laprais, Capucine, Zrounba, Clément, Bouvier, Julien, Blanchard, Nicholas, Bugnet, Matthieu, Gassenq, Alban, Gutiérrez, Yael, Vazquez‐Miranda, Saul, Espinoza, Shirly, Thiesen, Peter, Bourrellier, Romain, Benamrouche, Aziz, Baboux, Nicolas, Saint‐Girons, Guillaume, Berguiga, Lotfi, Cueff, Sébastien

“…Phase change materials (PCMs) have gained a tremendous interest as a means to actively tune nanophotonic devices through the large optical modulation produced…”
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Insertion of an Ultrathin Interfacial Aluminum Layer for the Realization of a Hf0.5Zr0.5O2 Ferroelectric Tunnel Junction by Manchon, Benoît, Segantini, Greta, Baboux, Nicolas, Rojo Romeo, Pedro, Barhoumi, Rabei, Infante, Ingrid C., Alibart, Fabien, Drouin, Dominique, Vilquin, Bertrand, Deleruyelle, Damien

“…Herein, the effect of a 2 nm thin aluminum layer inserted between the ferroelectric layer and the top electrode in a TiN/Hf0.5Zr0.5O2/TiN stack deposited by…”
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