Search Results - "Babic, D.I."

Full-Wafer Characterization of AlGaN/GaN HEMTs on Free-Standing CVD Diamond Substrates by Chabak, K.D., Gillespie, J.K., Miller, V., Crespo, A., Roussos, J., Trejo, M., Walker, D.E., Via, G.D., Jessen, G.H., Wasserbauer, J., Faili, F., Babic, D.I., Francis, D., Ejeckam, F.

“…We report on electrical characterization and uniformity measurements of the first conventionally processed AlGaN/GaN high electron mobility transistors (HEMTs)…”
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Analytic expressions for the reflection delay, penetration depth, and absorptance of quarter-wave dielectric mirrors by Babic, D.I., Corzine, S.W.

“…The authors analyze the operation of high-reflectivity quarter-wave (QW) dielectric mirrors at the band-stop center (Bragg) frequency, relevant for the design…”
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Modal reflection of quarter-wave mirrors in vertical-cavity lasers by Babic, D.I., Chung, Y., Dagli, N., Bowers, J.E.

“…Very high plane-wave reflection coefficients can be obtained with practical semiconductor quarter-wave mirrors, but for beams of finite width, the reflection…”
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Refractive indexes of (Al,Ga,In)As epilayers on InP for optoelectronic applications by Mondry, M.J., Babic, D.I., Bowers, J.E., Coldren, L.A.

“…Molecular beam epitaxy (MBE)-grown bulk and short-period superlattices of (Al,Ga,In)As epilayers lattice matched to InP were characterized by double-crystal…”
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Low-threshold, high-temperature pulsed operation of InGaAsP/InP vertical cavity surface emitting lasers by Wada, H., Babic, D.I., Crawford, D.L., Reynolds, T.E., Dudley, J.J., Bowers, J.E., Hu, E.L., Merz, J.L., Miller, B.I., Koren, U., Young, M.G.

“…Room-temperature pulsed operation of InGaAsP (1.3 mu m)/InP vertical cavity surface emitting lasers has been achieved with threshold current as low as 50 mA…”
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High quantum efficiency and narrow absorption bandwidth of the wafer-fused resonant In/sub 0.53/Ga/sub 0.47/As photodetectors by I-Hsing Tan, Dudley, J.J., Babic, D.I., Cohen, D.A., Young, B.D., Hu, E.L., Bowers, J.E., Miller, B.I., Koren, U., Young, M.G.

“…We demonstrate greater than 90% quantum efficiency in an In/sub 0.53/Ga/sub 0.47/As photodetector with a thin (900 /spl Aring/) absorbing layer. This was…”
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Wafer fusion: materials issues and device results by Black, A., Hawkins, A.R., Margalit, N.M., Babic, D.I., Holmes, A.L., Chang, Y.-L., Abraham, P., Bowers, J.E., Hu, E.L.

“…A large number of novel devices have been recently demonstrated using wafer fusion to integrate materials with different lattice constants. In many cases,…”
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64°C continuous-wave operation of 1.5-μm vertical-cavity laser by Margalit, N.M., Piprek, J., Zhang, S., Babic, D.I., Streubel, K., Mirin, R.P., Wesselmann, J.R., Bowers, J.E.

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Design and analysis of double-fused 1.55-μm vertical-cavity lasers by BABIC, D. I, PIPREK, J, STREUBEL, K, MIRIN, R. P, MARGALIT, N. M, MARS, D. E, BOWERS, J. E, HU, E. L

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Scattering losses from dielectric apertures in vertical-cavity lasers by Hegblom, E.R., Babic, D.I., Thibeault, B.J., Coldren, L.A.

“…In vertical-cavity lasers (VCLs) employing oxide or airgap apertures, the lasing mode typically travels unguided throughout most of the structure. For the…”
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Mode selectivity study of vertical-cavity surface-emitting lasers by Liu, G., Seurin, J.-F., Chuang, S. L., Babic, D. I., Corzine, S. W., Tan, M., Barnes, D. C., Tiouririne, T. N.

“…Mode selectivity of an air-post index-guided vertical-cavity surface-emitting laser structure operating at 1550 nm is investigated using a full-vector…”
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64/spl deg/C continuous-wave operation of 1.5-/spl mu/m vertical-cavity laser by Margalit, N.M., Piprek, J., Zhang, S., Babic, D.I., Streubel, K., Mirin, R.P., Wesselmann, J.R., Bowers, J.E.

“…We report on 64/spl deg/C continuous-wave (CW) operation of a 1.5-/spl mu/m vertical-cavity laser. This laser consists of two fused AlGaAs-GaAs mirrors with a…”
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Design and analysis of double-fused 1.55-/spl mu/m vertical-cavity lasers by Babic, D.I., Piprek, J., Streubel, K., Mirin, R.P., Margalit, N.M., Mars, D.E., Bowers, J.E., Hu, E.L.

“…Detailed design and experimental characterization of three generations of double-fused vertical-cavity lasers are described. The result of this design…”
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Room-temperature continuous-wave operation of 1.54-μm vertical-cavity lasers by Babic, D.I., Streubel, K., Mirin, R.P., Margalit, N.M., Bowers, J.E., Hu, E.L., Mars, D.E., Long Yang, Carey, K.

“…We report on the room-temperature continuous-wave operation of vertical-cavity lasers operating at 1.54 μm. The devices use a 7 strain-compensated quantum-well…”
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Isotype heterojunctions with flat valence or conduction band by Babic, D.I., Dohler, G.H., Bowers, J.E., Hu, E.L.

“…We show that isotype heterojunctions with a perfectly flat majority or minority carrier band edge can be realized by modulation doping of arbitrary continuous…”
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Single-mode, 1 Gb/s operation of double-fused vertical-cavity lasers at 1.54 μm by Blixt, P., Babic, D.I., Streubel, K., Margalit, N.M., Reynolds, T.E., Bowers, J.E.

“…We demonstrate and characterize single-mode fiber-optic transmission using vertical-cavity lasers operating at 1.54 μm. The experiments were performed with…”
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Multimode fiber transmission using room temperature double-fused 1.54-μm vertical-cavity lasers by Blixt, P., Babic, D.I., Margalit, N.M., Streubel, K., Bowers, J.E.

“…We present the very first long-wavelength vertical-cavity laser (VCL) multimode transmission experiments. These lasers are ideal for local area networks. The…”
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Effect of layer thickness variations on propagation delay and penetration depth of a quarter-wave distributed Bragg reflector by Law, K.-K., Babic, D.I.

“…The authors derive an analytical formula for the change of propagation delay and phase penetration depth of a quarter-wave distributed Bragg reflector (DBR)…”
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Low threshold, electrically injected InGaAsP (1.3 mu m) vertical cavity lasers on GaAs substrates by Dudley, J.J., Babic, D.I., Mirin, R., Yang, L., Miller, B.I., Ram, R.J., Reynolds, T., Hu, E.L., Bowers, J.E.

“…Summary form only given. Electrically injected long-wavelength vertical cavity lasers (VCLs) employing InGaAsP (1.3 mu m) active regions fused to GaAs-AlAs…”
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High-temperature pulsed operation of InGaAsP/InP surface emitting lasers by Wada, H., Babic, D.I., Crawford, D.L., Dudley, J.J., Bowers, J.E., Hu, E.L., Merz, J.L., Miller, B.I., Koren, U., Young, M.G.

“…Summary form only given. The observation of above-room-temperature pulsed operation of 1.3- mu m InGaAsP/InP vertical-cavity surface emitting lasers (VCSELs)…”
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