Search Results - "Babić, D. I."

Low threshold, wafer fused long wavelength vertical cavity lasers by Dudley, J. J., Babić, D. I., Mirin, R., Yang, L., Miller, B. I., Ram, R. J., Reynolds, T., Hu, E. L., Bowers, J. E.

“…We demonstrate electrically injected InGaAsP (1.3 μm) vertical cavity lasers (VCLs) fabricated on GaAs substrates and employing GaAs/AlAs mirrors. The…”
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Cleaved GaN facets by wafer fusion of GaN to InP by Sink, R. K., Keller, S., Keller, B. P., Babić, D. I., Holmes, A. L., Kapolnek, D., DenBaars, S. P., Bowers, J. E., Wu, X. H., Speck, J. S.

“…Basal plane sapphire is a common substrate for the heteroepitaxy of GaN. This presents a challenge for fabrication of cleaved-facet GaN lasers because the…”
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Wafer fusion: materials issues and device results by Black, A., Hawkins, A.R., Margalit, N.M., Babic, D.I., Holmes, A.L., Chang, Y.-L., Abraham, P., Bowers, J.E., Hu, E.L.

“…A large number of novel devices have been recently demonstrated using wafer fusion to integrate materials with different lattice constants. In many cases,…”
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Analytic expressions for the reflection delay, penetration depth, and absorptance of quarter-wave dielectric mirrors by Babic, D.I., Corzine, S.W.

“…The authors analyze the operation of high-reflectivity quarter-wave (QW) dielectric mirrors at the band-stop center (Bragg) frequency, relevant for the design…”
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Estimation of scattering losses in dielectrically apertured vertical cavity lasers by Hegblom, E. R., Babic, D. I., Thibeault, B. J., Coldren, L. A.

“…Dielectric apertures, formed by oxidation or wet-etching of high Al content AlGaAs layers in vertical cavity lasers, have recently been used for improved…”
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Modal reflection of quarter-wave mirrors in vertical-cavity lasers by Babic, D.I., Chung, Y., Dagli, N., Bowers, J.E.

“…Very high plane-wave reflection coefficients can be obtained with practical semiconductor quarter-wave mirrors, but for beams of finite width, the reflection…”
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Refractive indexes of (Al,Ga,In)As epilayers on InP for optoelectronic applications by Mondry, M.J., Babic, D.I., Bowers, J.E., Coldren, L.A.

“…Molecular beam epitaxy (MBE)-grown bulk and short-period superlattices of (Al,Ga,In)As epilayers lattice matched to InP were characterized by double-crystal…”
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Effect of layer thickness variations on propagation delay and penetration depth of a quarter-wave distributed Bragg reflector by Law, K.-K., Babic, D.I.

“…The authors derive an analytical formula for the change of propagation delay and phase penetration depth of a quarter-wave distributed Bragg reflector (DBR)…”
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Isotype heterojunctions with flat valence or conduction band by Babic, D.I., Dohler, G.H., Bowers, J.E., Hu, E.L.

“…We show that isotype heterojunctions with a perfectly flat majority or minority carrier band edge can be realized by modulation doping of arbitrary continuous…”
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Minimum temperature sensitivity of 1.55 μm vertical-cavity lasers at −30 nm gain offset by Piprek, J., Akulova, Y. A., Babic, D. I., Coldren, L. A., Bowers, J. E.

“…Double-fused vertical-cavity surface-emitting lasers (VCSELs) have demonstrated the highest temperature performance of any 1.5 μm VCSEL, but further…”
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Design and analysis of double-fused 1.55-μm vertical-cavity lasers by BABIC, D. I, PIPREK, J, STREUBEL, K, MIRIN, R. P, MARGALIT, N. M, MARS, D. E, BOWERS, J. E, HU, E. L

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Scattering losses from dielectric apertures in vertical-cavity lasers by Hegblom, E.R., Babic, D.I., Thibeault, B.J., Coldren, L.A.

“…In vertical-cavity lasers (VCLs) employing oxide or airgap apertures, the lasing mode typically travels unguided throughout most of the structure. For the…”
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144 °C operation of 1.3 μm InGaAsP vertical cavity lasers on GaAs substrates by DUDLEY, J. J, ISHIKAWA, M, BABIC, D. I, MILLER, B. I, MIRIN, R, JIANG, W. B, BOWERS, J. E, HU, E. L

“…We report lasing at temperatures as high as 144 °C in long-wavelength InGaAsP vertical cavity lasers. The devices are optically pumped and employ a novel…”
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Mode selectivity study of vertical-cavity surface-emitting lasers by Liu, G., Seurin, J.-F., Chuang, S. L., Babic, D. I., Corzine, S. W., Tan, M., Barnes, D. C., Tiouririne, T. N.

“…Mode selectivity of an air-post index-guided vertical-cavity surface-emitting laser structure operating at 1550 nm is investigated using a full-vector…”
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High quantum efficiency and narrow absorption bandwidth of the wafer-fused resonant In0.53Ga0.47As photodetectors by I-HSING TAN, DUDLEY, J. J, BABIC, D. I, COHEN, D. A, YOUNG, B. D, HU, E. L, BOWERS, J. E, MILLER, B. I, KOREN, U, YOUNG, M. G

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Spontaneous emission in microcavities with distributed mirrors by Ram, R.J., Babid, D.I., York, Y.A., Bowers, J.E.

“…This paper presents an analytic approach to spontaneous emission in resonators with distributed Bragg reflectors (DBR's). The foundation of our analysis is the…”
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Low-threshold, high-temperature pulsed operation of InGaAsP/InP vertical cavity surface emitting lasers by Wada, H., Babic, D.I., Crawford, D.L., Reynolds, T.E., Dudley, J.J., Bowers, J.E., Hu, E.L., Merz, J.L., Miller, B.I., Koren, U., Young, M.G.

“…Room-temperature pulsed operation of InGaAsP (1.3 mu m)/InP vertical cavity surface emitting lasers has been achieved with threshold current as low as 50 mA…”
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Effects of nonuniform current injection in GaInAsP/InP vertical-cavity lasers by WADA, H, BABIC, D. I, ISHIKAWA, M, BOWERS, J. E

“…We systematically measured the active-area dependence of the threshold current density of GaInAsP/InP vertical-cavity lasers at various temperatures. The…”
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Fabrication and characteristics of double-fused vertical-cavity lasers by Babić, D. I., Streubel, K., Mirin, R. P., Margalit, N. M., Peters, M. G., Bowers, J. E., Hu, E. L.

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Reactive ion etcher self‐bias voltage regulator by Schramm, Jeff E., Babic, Dubravko I., Hu, Evelyn L., Merz, James L.

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